Japan Display Inc.

Koshiro Moriguchi

Yoshitaka Ozeki

Nobutaka Ozaki

Koji Ishizaki

Takahiro Takeuchi

Tomoyasu Hirano

Hayato Kurasawa

Gen Koide

Toshinori Uehara

Tadayoshi Katsuta

A display device includes a first transistor provided with an oxide semiconductor layer, a first gate electrode facing the oxide semiconductor layer and a first gate insulating layer between the oxide semiconductor layer and the first gate electrode, a first transparent conductive layer in contact with the oxide semiconductor layer in a first contact area not overlapping the first gate electrode in a plan view, and a second transparent conductive layer connected to the first transparent conductive layer in a second contact area overlapping the first gate electrode in a plan view and provided in a display area of the pixel.

Display device

A display device includes a first transistor provided with an oxide semiconductor layer, a first gate wiring facing the oxide semiconductor layer and a first gate insulating layer between the oxide semiconductor layer and the first gate wiring, a first transparent conductive layer provided on at least a first insulating layer on the first transistor, the first transparent conductive layer having an area overlapping the gate wiring and being in contact with the oxide semiconductor layer in a first contact area not overlapping the gate wiring, a second transparent conductive layer provided above at least a second insulating layer on the first transparent conductive layer and being in contact with the first transparent conductive layer at a second contact area overlapping the gate wiring, and a third transparent conductive layer provided between the second transparent conductive layer and the second insulating layer.

A display device includes a display area, a frame area surrounding the display area, a plurality of pixel circuit in the display area, a peripheral circuit in the frame area, and wirings connecting the pixel circuit and the peripheral circuit, wherein the peripheral circuit incudes a plurality of switch circuits along a direction away from the display area, a plurality of relay electrodes between the display area and the plurality of switch circuits, and a plurality of connecting wirings connecting each of the plurality of relay electrodes and each of the plurality of switch circuits, and the plurality of relay electrodes is connected to the wirings, and one of the plurality of connecting wirings connecting one of the plurality of switch circuits and one of the plurality of relay electrodes intersects at least one of the other plurality of switch circuits in a plan view.

A display device includes a first transistor having an oxide semiconductor layer, a gate wiring opposite the oxide semiconductor layer, a gate insulating layer between the semiconductor layer and the gate wiring, a first insulating layer including at least one insulating layer having a first contact hole outside the gate wiring, a planarization film having a second contact hole overlapping the first contact hole, a first transparent conductive layer including an area overlapping the gate wiring, a second insulating layer covering a side of the second contact hole, a second transparent conductive layer in contact with the oxide semiconductor layer through the first and second contact hole, a first resin filling the first and second contact hole coated by the second transparent conductive layer, and a third transparent conductive layer on the second transparent conductive layer and the first resin.

According to one embodiment, a display device includes a first conductive layer, a second conductive layer overlapping the first conductive layer, a first capacitive portion located in a same layer as the first conductive layer, a second capacitive portion located in a same layer as the second conductive layer and overlapping the first capacitive portion, a first inorganic insulating film located between the first conductive layer and the second conductive layer and between the first capacitive portion and the second capacitive portion, a drain electrode electrically connected to the second capacitive portion, a pixel electrode electrically connected to the drain electrode.

A detection device is provided and includes substrate; drive electrode provided on substrate; detection electrode provided on substrate and capacitively coupling with drive electrode; first thin film transistor connected to drive electrode and second thin film transistor connected to first thin film transistor, first insulating film and second insulating film both stacked on substrate, wherein first thin film transistor comprises first gate electrode and first semiconductor layer, second thin film transistor comprises second gate electrode and second semiconductor layer, first semiconductor layer and second semiconductor layer are in same layer and are located between first insulating film and second insulating film, first gate electrode opposes first semiconductor layer via first insulating film, second gate electrode opposes second semiconductor layer via second insulating film, and distance from first gate electrode to first semiconductor layer is greater than distance from second gate electrode to second semiconductor layer.

Detection device with thin film transistors

A display device includes a first transistor provided with an oxide semiconductor layer, a first gate electrode facing the oxide semiconductor layer and a first gate insulation layer between the oxide semiconductor layer and the first gate electrode, a first transparent conductive layer in contact with the oxide semiconductor layer in a first contact area not overlapping the first gate electrode in a plan view, and a second transparent conductive layer connected to the first transparent conductive layer in a second contact area overlapping the first gate electrode in a plan view and provided in a display area of the pixel.

According to one embodiment, a display device includes a scanning line, a semiconductor layer, a first inorganic insulating film located between the scanning line and the semiconductor layer, a first signal line, a second inorganic insulating film having a main surface which contacts the first signal line and located between the semiconductor layer and the first signal line, a capacitance electrode contacting the main surface, a pixel electrode overlapping the capacitance electrode, and a third inorganic insulating film covering the first signal line and the capacitance electrode and located between the first signal line and the pixel electrode and between the capacitance electrode and the pixel electrode.

Display device and array substrate

According to one embodiment, a display device includes a base substrate, a switching element including a semiconductor layer, a power supply line, a pixel electrode electrically connected to the switching element, a capacitance electrode positioned between the base substrate and the pixel electrode and electrically connected to the power supply line, a first interlayer insulating film positioned between the pixel electrode and the capacitance electrode, a common electrode, and an electrophoretic element positioned between the pixel electrode and the common electrode. An edge of the capacitance electrode overlaps the pixel electrode over the entire periphery thereof.

According to one embodiment, a detection device includes a substrate, a drive electrode provided on the substrate, a detection electrode provided on the substrate and capacitively coupling with the drive electrode, and a first thin film transistor and a second thin film transistor, electrically connected to the drive electrode, and the first thin film transistor has a withstand voltage higher than a withstand voltage of the second thin film transistor.

Detection device

According to one embodiment, there is provided a display device including a basement, a first switching element which is provided on the basement and includes a first semiconductor layer and a first gate electrode, a second switching element which is provided on the basement and includes a second semiconductor layer and a second gate electrode, and a pixel electrode which is electrically connected to the first switching element. A distance between the first semiconductor layer and the first gate electrode is greater than a distance between the second semiconductor layer and the second gate electrode.

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Tokyo, Japan

Koshiro Moriguchi