Matsushita Electric Industrial Co., Ltd.

Koshiro Mori

Masakazu Fukai

Takashi Hirao

Seiichi Nagata

Komei Asai

Shin-ichiro Ishihara

Masatoshi Kitagawa

Tsuneo Tanaka

Akio Moriyama

Hiroshi Tatsuta

Shinichiro Ishihara

Motonori Mochizuki

Masaharu Ono

A thin film device such as an amorphous thin film solar battery is easily made with high integration by use of metal-diffused regions in the thin film as an electrical connection region across the thickness of the thin film. By use of such metal-diffused regions 24, 24 . . . for connection between transparent stripe shaped electrodes 21', 21'. . . disposed between glass substrate 20 and amorphous silicon thin film 23 and stripe shaped metal electrodes 25, 25 . . . on the top surface of the thin film 23, series connected solar battery cells can be made with a small number of process steps.

Method of making thin film device

A method for making photovoltaic device comprising the steps of moving at least one substrate into a reaction chamber, causing a plasma reaction of raw material gases in said reaction chamber, thereby forming an amorphous silicon layer of a first conductivity type on said substrate, moving said at least one substrate into a next reaction chamber for a next plasma reaction, causing said next plasma reaction of next raw material gases in said reaction chamber, thereby forming a second amorphous silicon layer of a second conductivity type on said layer of the first conductivity type, the improvement being in after finishing said forming of said an amorphous silicon layer of a first conductivity type, changing the gas atmosphere of said reaction chamber into a different atmosphere which is substantially identical and of equal pressure to the next gas atmosphere of said next reaction chamber, and thereafter moving said substrate to said next reaction chamber.

Method of making photovoltaic device

A semiconductor device utilizing amorphous Si.sub.1-x C.sub.x (0.ltoreq..times..ltoreq.1) containing hydrogen. Through a high frequency glow discharge process or a high frequency sputtering process, the composition x is varied to form a heterojunction between amorphous Si.sub.1-x C.sub.x layers, and electrodes are mounted to the layers to complete the device. The amorphous material is desirably selected to have a forbidden band width of 1.7 to 3.2 eV so that the sensitivity of the device can cover the visible range. Because of the amorphous layers, freedom of type and shape of the substrate of the device is large. The dark resistance of the layers is large to improve the photoconductive characteristics of the semiconductor device.

Semiconductor device and method of manufacturing the same

In a liquid crystal display device comprising two glass substrate plates positioned in parallel with each other at a nearly constant interval and a liquid crystal interposed between said glass substrate plates, an electrode being provided on each of the opposite surfaces of said glass substrate plates and a voltage being applied between said electrodes, 'haze' which appears at the display surface can be removed by using a liquid crystal composition containing one or more additives capable of controlling the orientation of the liquid crystal molecules (namely, capable of forming a perpendicular orientation phase).

Liquid crystal display device

A liquid crystal composition comprises a liquid crystal and a carboxylic acid or its ester as an additive. By the presence of the additive, the longitudinal axes of liquid crystal molecules can be spontaneously oriented in a direction perpendicular to the surface of a holding wall of a liquid crystal display plate. In particular, the additives may be esters of p-hydroxy- or m-hydroxy-benzoic acid, phenylacetic acids having 1 or 2 hydroxy groups or their esters, phenylpropionic acids having 1 or 2 hydroxy groups or their esters, or 3, 4, 5-trihydroxybenzoic acid esters, or said additives may be selected from the group consisting of compounds having the formulae: ##SPC1## Wherein R.sub.3 is hydrogen or a normal alkyl group having 1 to 18 carbon atoms; R.sub.5 is hydrogen, hydroxy, a normal alkyl group having 1 to 16 carbon atoms or a normal alkoxy group having 1 to 16 carbon atoms; R.sub.6 is hydrogen, hydroxy or nitro; n.sub.1 is 1 or 2: and n.sub.2 is 0, 1 or 2.

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Osaka, Japan

Koshiro Mori