Micro Mobio Corporation

Koshiro Matsumoto

Ikuroh Ichitsubo

Masaya Kuwano

Kanya Kubota

Guan-Wu Wang

Musaya Kuwano

The wireless RF semiconductor system is described for use in wireless communication devices that operate in frequency range from approximately 6 GigaHertz (GHz) to 100 GHz. The system comprises of at least one RF antenna and at least one RF integrated circuit fabricated (or built) on the same semiconductor substrate inside a one single packaged module. The wireless RF semiconductor system is described in a variety of different configurations with its functionality divided up over several single chip circuits. The system simplifies assembly, reduces size and cost, and allows for a quick time to market, while maximizing the RF performance demanded by fixed and mobile 4G, 5G and other wireless standards. The system uses a novel idea of configuration and packaging of active and passive RF components into a single module. This in turn allows RF manufacturers to unlock the potential of very high frequencies operation that were previously thought too expensive and unattainable to average user. The wireless RF semiconductor system can be implemented in both mobile solutions (such as phones and tablets) and fixed applications (such as repeaters, base-stations, and distributed antenna systems).

Radio frequency active antenna system in a package

A radio frequency (RF) system is described for use in a wireless communication device. The RF system may contain power amplifiers, additional circuitry and components (e.g., gain controllers, phase shifters), and/or antennas. The RF system is described in a variety of different configurations with its functionality divided up over several single chip circuits. Using the single chip circuits simplifies assembly, reduces size, and allows for high speed RF performance demanded by fixed and mobile wireless standards. The system may use a first amplifier circuit combined with an adjacent channel leakage correction circuit so that the output of the first amplifier has the signal leakage substantially cancelled.

Radio frequency power amplifier with adjacent channel leakage correction circuit

A linear amplifier circuit includes a multi-stage power amplifier that can amplify an input signal to produce an output signal, and a gain feedback control circuit coupled with the output and the input of the multi-stage power amplifier. An adjacent-channel leakage feedback control circuit can detect the output signal at the output of the multi-stage power amplifier and reduce adjacent-channel leakage in the output signal over an output power range based on the detected output signal.

RF power amplifier with linearity control

A linear amplifier circuit includes a first matching circuit that receives a first signal and to produce a first impedance matched signal, a first power amplifier that produces a first amplified signal in response to the first impedance matched signal under the control of a first bias signal, a second power amplifier that produces a second amplified signal in response to the first impedance matched signal under the control of a second bias signal, a biasing circuit that produces the first bias signal and the second bias signal. The first power amplifier can be activated by the first biasing signal when the power of the output signal is to exceed a first threshold value. The second power amplifier can be activated by the second biasing signal when the power of the output signal is below a second threshold value. A second matching circuit configured to receive the first amplified signal and the second amplified signal, and to produce an output signal.

Efficient integrated linear amplifier module

A radio frequency (RF) module provides first and second power amplifiers configured to produce first and second amplified RF signals at first and second output RF terminals, respectively; and first and second arrays of pads positioned opposite each other, the first array including the first output RF terminal and the second array including the second output RF terminal. The module also provides two reserve terminals that can be connected to capacitors, inductors, sensors for RF linearity, or can be left unconnected.

Miniature dual band power amplifier with reserved pins

A system of compatible modules includes a radio frequency (RF) module with a power amplifier configured to produce an amplified RF signal at an output RF terminal; and a first row of pads and a first column of pads intersecting at a corner pad of the module, and wherein the corner pad is coupled to the output RF terminal.

Systems of miniaturized compatible radio frequency wireless devices

An integrated power amplifier (PA) module formed on a substrate includes a first cluster of transistor cells positioned in a first portion of the substrate; a second cluster of transistor cells positioned in a second portion of the substrate and spaced apart from the first portion; and a combiner coupled to the first and second clusters to combine the output of the first and second clusters.

Growing community of inventors

Tokyo, Japan

Koshiro Matsumoto