Hokkaido University

Rohm Co., Ltd.

Imra Japan Kabushikikaisha

Aisin Corporation

Kosei Ueno

Hiroaki Misawa

Dai Ohnishi

Yoichi Mugino

Takui Sakaguchi

Keiji Sasaki

Yasuyuki Tsuboi

Koki Hayashi

Hironori Suzuki

Giles Allison

Masanori Sasaki

Yoshiaki Nishijima

Xu Shi

Tomoya Oshikiri

Kei Murakoshi

Quan Sun

This light absorbing device includes: a light reflecting layer; a dielectric layer disposed on the light reflecting layer; and a plurality of metal nanostructures disposed on the dielectric layer. A portion of each of the plurality of metal nanostructures is buried in the dielectric layer and another portion thereof is exposed to the outside.

Light absorbing device, manufacturing method thereof, and photoelectrode

An electricity measuring type surface plasmon resonance sensor including: a plasmon polariton intensifying sensor chip in which a prism and a sensor chip including a transparent electrode, an n-type transparent semiconductor film, and a plasmon resonance film electrode arranged in this order are arranged in an order of the prism, the transparent electrode, the n-type transparent semiconductor film, and the plasmon resonance film electrode; and an electric measuring apparatus which directly measures a current or voltage from the transparent electrode and the plasmon resonance film electrode.

Electricity measuring type surface plasmon resonance sensor and electricity measuring type surface plasmon resonance sensor chip used in the same

The present invention has an object to provide a photoelectric conversion device which can be manufactured through a simple manufacturing process, achieve photoelectric conversion over a wide range of wavelength regions, and attain high photoelectric conversion efficiency even in the infrared wavelength region, a photodetection device, and a photodetection method. This photoelectric conversion deviceincludes a substratecontaining single crystalline titanium dioxide, adhesion layersformed on a surfaceof the substrate, metal microstructure bodies, each of which has a volume of 1,000 nmor more and 3,000,000 nmor less, arranged at predetermined intervals in a predetermined direction on surfaces of the adhesion layers, a containerfor containing an electrolyte solution L in an arrangement region of the metal microstructure bodieson the surfaceof the substrate, a conductive layerformed on a rear surfaceof the substrate, and a counter electrodein contact with the electrolyte solution L in the container; and the metal microstructure bodiesadhere onto the substratethrough the adhesion layers, a Schottky barrier is formed at an interface of the substratewith the metal microstructure bodies, and photoelectric conversion is carried out for light in an infrared region by utilizing a plasmon resonance phenomenon.

Photoelectric conversion device, light detecting device, and light detecting method

Disclosed is a process for producing a photoresist pattern, comprising the steps of: preparing a photomask that comprises a metal nano structure having a metal film arranged thereon and can generate a plasmon resonance, on a mask substrate; preparing a photoresist film that is formed on the surface of the resist substrate and is sensible to light having a wavelength (X); bringing the photomask into contact with the photoresist film; and exposing the photoresist film to light having a wavelength (Y) that is longer than the wavelength (X) and is shorter than the peak wavelength of a plasmon resonance band of the metal nano structure, thereby transferring a pattern of the metal film in the photomask onto the photoresist film.

Process for production of photoresist pattern

In a metallic structure including a metallic nano-chain with plasmon resonance absorption, a metallic nanoparticle forming the metallic nano-chain is formed in a circular, triangle, or rhomboid shape. The wavelength selectivity can be increased also by forming a closed region by mutually linking all of metallic nanoparticles that are mutually linked with bottlenecks. In a photodetector, a photodetection unit including a current detection probe, a nano-chain unit, and a current detection probe is arranged on a substrate. The nano-chain unit is a metallic structure with plasmon resonance absorption, where metallic nanoparticles are mutually linked with bottlenecks. Each current detection probe has a corner whose tip is formed with a predetermined angle, and this corner is arranged to face the tip of the nano-chain unit, i.e., a corner of the metallic nanoparticle. Photodetection with high wavelength selectivity is performed based on a change in the initial voltage of the current-voltage characteristic.

Metallic structure and photodetector

Provided is a plasmon resonance detector that can detect temperature change in optical devices, in which the metal structure having plasmon resonance absorption is used for the optical devices. A diode formed of a conductive substrate, an n-type semiconductor layer, an i-type semiconductor layer, a p-type semiconductor layer, an n electrode (negative electrode), a p electrode (positive electrode), an insulating film, or the like is used as a semiconductor device whose resistance value changes in accordance with temperature change. A nanochain formed by connecting a plurality of metal nanoparticles is disposed on this diode. When the nanochain is irradiated with light, the nanochain generates heat. The heat generated in the nanochain is conducted to the diode. The resistance value of the diode changes in accordance with temperature change, and thus this change is read, a temperature or an amount of heat generation of the nanochain is measured, and existence and strength of the plasmon resonance are detected.

Plasmon resonance detector

A metal structure capable of significantly increasing wavelength selectivity and polarization electivity for an incident light, and a production method thereof. First, a solid transparent substrate (glass substrate) () is cleaned and dried (S). The surface of the substrate () is spin-coated with a positive electron lithography-use resist solution and then baked, and the resist solution is removed to form a resist thin film () on the substrate () (S). A specified pattern is drawn on the resist thin film () with an electron beam, and the film is developed, rinsed and dried (S). Then, metals such as chromium and then gold are formed sequentially on the substrate () by sputtering (S). And, excessive resist materials are removed from the surface of the substrate () (S), whereby metal nano-rod array () is completed. The metal nano-rod array () has a structure in which many metal nano-rods having their sizes precisely controlled are integrated on the substrate () at constant fine intervals and with their directions aligned in one axial direction.

Metal structure and production method therefor

There are provided a sensing device, a sensing apparatus, and a sensing method capable of realizing effective multi-photon absorption and local plasmon enhancement function. The sensing device can realize a high multi-photon excitation efficiency and selectivity by accurately controlling the material, shape, size, interval, and direction of metal particles arranged on a substrate. By employing the sensing device in various sensing apparatuses such as a fluorescent sensing apparatus, it is possible to realize sensing of detection object material with a high sensibility.

Growing community of inventors

Sapporo, Japan

Kosei Ueno