Olympus Corporation

Olympus Imaging Corporation

Nec Electronics Corporation

Olympus Medical Systems Corporation

Kosei Tamiya

Tetsuo Kikuchi

Nobuyuki Watanabe

Shiro Tsunai

Toru Kondo

Yasuhiro Komiya

Masashi Saito

Katsuhiro Wakabayashi

Kazuya Matsumoto

Masao Sambongi

Hideo Adachi

Mamoru Hasegawa

Hiroshi Ito

Ryo Ohta

Masaaki Amikura

Tetsuji Ueyama

An endoscope system of the present invention is provided with: a long, thin inserted portion that includes an illuminating portion that emits an illumination light beam toward an imaging subject, an image-acquisition portion that acquires an image of the imaging subject, and a channel; and an illumination device that is disposed in the channel, wherein the illumination device includes an illuminating portion that emits, toward the imaging subject, an illumination light beam that has a divergence angle that is smaller than that of the illumination light beam and for which the image-acquisition portion has sensitivity, and a pulling member that extends to outside the channel from a base end of the illuminating portion, and wherein the illuminating portion can be removed from the channel by pulling the pulling member.

Endoscope system and illumination device

A solid-state imaging device includes a first semiconductor substrate in which first photoelectric conversion layers photoelectrically converting incident light in a first wavelength band are formed, a second semiconductor substrate in which second photoelectric conversion layers photoelectrically converting incident light are formed, a conductive layer disposed between the first semiconductor substrate and the second semiconductor substrate and having conductivity, an insulation film disposed between the second semiconductor substrate and the conductive layer and having an insulation property, in which light passing through the first photoelectric conversion layer, the conductive layer, and the insulation film is incident on the second semiconductor substrate, a predetermined voltage is applied to the conductive layer, and a wavelength of light in a second wavelength band photoelectrically converted by the second photoelectric conversion layer when the predetermined voltage is applied to the conductive layer is longer than when the predetermined voltage is not applied.

Solid-state imaging device

A solid-state imaging device includes n first photoelectric conversion elements configured to photoelectrically convert incident light, n first reading circuits configured to output corresponding first pixel signals, m second photoelectric conversion elements configured to photoelectrically convert incident light, m second reading circuits configured to sequentially output corresponding second pixel signals, and a reading control circuit, wherein each of the second reading circuits includes a detection circuit configured to output an event signal when a change in a second charge signal is detected and a pixel signal generation circuit configured to add address information to an event signal, and the reading control circuit causes the first pixel signal to be output by determining a reading region corresponding to address information, and n and m are natural numbers greater than or equal to 2.

A solid-state imaging device includes a first semiconductor substrate to which light is incident; a second semiconductor substrate stacked to the first semiconductor substrate; n first photoelectric conversion devices periodically arranged in the first semiconductor substrate and generating first electric charge signals; n first reading circuits arranged in correspondence with the n first photoelectric conversion devices in the first semiconductor substrate, respectively, each of the n first reading circuits accumulating the first electric charge signal outputting a signal voltage corresponding to the accumulated first electric charge signal as a first pixel signal; a driving circuit sequentially outputting the first pixel signal; m second photoelectric conversion devices periodically arranged in one of the first/second semiconductor substrates and generating second electric charge signals; and m second reading circuits sequentially outputting a second pixel signal, wherein m and n are natural numbers equal to 2 or more than 2.

Provided is an image-acquisition device including a first image-acquisition surface including a photoelectric conversion film capable of subjecting incident light to photoelectric conversion while transmitting some of the incident light; a second image-acquisition surface including a photoelectric conversion layer that subjects the incident light transmitted by the first image-acquisition surface to photoelectric conversion; and a polarizing filter that is disposed between the two image-acquisition surfaces and that extracts polarization information from the incident light transmitted by the first image-acquisition surface.

Image-acquisition device

Provided is an image capturing module including a microlens array that collects light from a subject, which is imaged at an image plane; a filter that allows light in specific wavelength bands in the collected light to pass therethrough; and an image capturing device that acquires images of the light passing through the filter, wherein the filter is formed by arraying a plurality of RGB filter portions and a plurality of narrow-band filter portions, the image capturing device includes a plurality of color-wavelength obtaining regions and a plurality of narrow-band-wavelength obtaining regions, and the microlens array includes a plurality of first microlenses corresponding to the respective color-wavelength obtaining regions and a plurality of second microlenses corresponding to the respective narrow-band-wavelength obtaining regions, and the first microlenses are each disposed so that the light from the subject imaged at the image plane reaches at least one of the color-wavelength obtaining regions.

Image capturing module and image capturing apparatus

A capacitive micromachined ultrasonic transducer (cMUT) device, comprising: a cMUT formed on a semiconductor substrate; a DC high-voltage generation unit that is provided on the semiconductor substrate and that is for generating a DC high-voltage signal to be superposed on a driving signal for the cMUT; a driving signal generation unit that is provided on the semiconductor substrate and that is for generating the driving signal; and a superposition unit that is provided on the semiconductor substrate and that is for branching the DC high-voltage signal output from the DC high-voltage generation unit and for superposing one of the branched DC high-voltage signals on the other of the branched DC high-voltage signals via the driving signal generation unit.

Capacitive micromachined ultrasonic transducer (cMUT) device and method of controlling the same

A focus detecting device includes a focus detecting optical system which forms a plurality of object images. A photoelectric conversion element array includes a plurality of pixels and subjects each of the plural object images formed by the focus detecting optical system to photoelectric conversion. An electric charge transfer path transfers an electric charge obtained by the photoelectric conversion subjected by the photoelectric conversion element array. A focus detecting section performs focus detection with respect to a plurality of focus areas on the basis of a signal associated with an electric charge transferred by the electric charge transfer path. A plurality of effective pixel regions corresponding to the plural focus areas are arranged in the arrangement direction of the pixels of the photoelectric conversion element array, and ineffective pixel regions are arranged between the plural effective pixel regions.

Focus detecting device

The present invention discloses a focus detection device capable of reading a plurality of focus detection outputs in parallel. As an exemplary structure, the focus detection device includes a focus detection sensor having a plurality of output terminals for outputting, in parallel, analog data corresponding to focus states of multiple points in the field of a viewfinder, a multiplexer for arranging and outputting, in series order on the one terminal, the analog data output in parallel from the plurality of output terminals of the focus detection sensor, and an A/D converter for converting, to digital data, the analog data arranged in series order on the one terminal through and output from the multiplexer.

Focus detection device having a plurality of focusing points and controlling the output of data from the focusing points

In an autofocus image sensor, monitoring pixels are disposed adjacent to a pixel array over a length equal to that of the pixel array in each of a standard portion and a reference portion. Signals from the monitoring pixels of both of the standard portion and the reference portion are subjected to arithmetic operation to control accumulation of electric charges. Thus, an error in position detection is minimized.

Image sensor

A variable resistance circuit and application circuits using the same capable of offsetting the variance in the manufacture of integrated circuit and the influence of ambient temperatures, including: a control circuit having a plurality of constant-current output terminals, with a constant current ratio of the output terminals varied by signals applied to a control terminal; an operational amplifier; a resistor; and a plurality of MOS transistors having the gates thereof connected in common; and one output terminal of the control circuit being connected to one end of the resistor and to an inverted input terminal of the operational amplifier and the other output terminal being connected to the drain of one MOS transistor connected at the gate thereof to an output terminal of the operational amplifier and being connected to a non-inverted input terminal of the operational amplifier; and the other end of said resistor and the source of said one MOS transistor being connected to a reference voltage terminal. Said one MOS transistor is caused to operate in the triode region so as to use as an equivalent resistance the portion between the source and drain of the other MOS transistor connected at the gate thereof to the output terminal of the operational amplifier and at the source thereof directly or through a voltage copy circuit to the reference voltage terminal.

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Tokyo, Japan

Kosei Tamiya