Semiconductor Energy Laboratory Co., Ltd.

Kosei Nei

Akihisa Shimomura

Masaki Koyama

Shunpei Yamazaki

Naoto Yamade

Hiroaki Honda

Takayuki Ikeda

Hidekazu Miyairi

Hideaki Shishido

Junpei Momo

Motomu Kurata

Hidetomo Kobayashi

Takashi Nakagawa

Fumito Isaka

Tsutomu Murakawa

Ryu Komatsu

Sho Kato

Kiyotaka Kimura

Toru Hasegawa

Yoshinori Ieda

Suguru Hondo

Yoshinori Ando

Miki Suzuki

Yasutaka Suzuki

Asako Higa

Hajime Kimura

Hideomi Suzawa

Shinya Sasagawa

Kazuya Hanaoka

Toshihiko Takeuchi

Naoki Okuno

Taiga Muraoka

Hiroshi Fujiki

Sho Nagamatsu

Tatsuya Mizoi

Yusuke Shino

Hideto Ohnuma

Kosei Noda

Takanori Matsuzaki

Yasuhiro Jinbo

Koji Dairiki

Kentaro Hayashi

Eiji Higa

Kenichiro Makino

Kentaro Sugaya

A semiconductor device includes a first layer and a second layer over the first layer. The first layer and the second layer each include a transistor. The transistor in the first layer and the transistor in the second layer each include a first oxide, a first conductor and a second conductor over the first oxide, a first insulator placed to cover the first conductor, the second conductor, and the first oxide, a second insulator over the first insulator, a second oxide placed between the first conductor and the second conductor over the first oxide, a third insulator over the second oxide, a third conductor over the third insulator, and a fourth insulator in contact with a top surface of the second insulator, a top surface of the second oxide, a top surface of the third insulator, and a top surface of the third conductor.

Semiconductor device

A high-definition display device is provided. A small display device is provided. In the display device, a first layer and a second layer are stacked and provided. The first layer includes a gate driver circuit and a source driver circuit, and the second layer includes a display portion. The gate driver circuit and the source driver circuit are provided to include a region overlapping with the display portion. The gate driver circuit and the source driver circuit have an overlap region where they are not strictly separated from each other. Five or more gate driver circuits and five or more source driver circuits can be provided.

Display device and electronic device

A semiconductor device with less variation in transistor characteristics is provided. The semiconductor device includes a transistor, a first and a second conductor, and a first to a third insulator. The transistor and the first conductor are provided over the first insulator. The transistor includes an oxide semiconductor. The second insulator is provided over the transistor. The first conductor includes a region which does not overlap with the second insulator. The third insulator is provided to cover the first conductor, the transistor, and the second insulator. The second conductor is provided over the third insulator and at least partly overlaps with the first conductor.

Semiconductor device and method for manufacturing semiconductor device

An object is to provide an electronic device capable of recognizing a user's facial feature accurately. A glasses-type electronic device includes a first optical component, a second optical component, a frame, an imaging device, a feature extraction unit, and an emotion estimation unit. The frame is in contact with a side surface of the first optical component and a side surface of the second optical component. The imaging device is in contact with the frame and has a function of detecting part of a user's face. The feature extraction unit has a function of extracting a feature of the user's face from the detected part of the user's face. The emotion estimation unit has a function of estimating information on the user from the extracted feature.

Glasses-type electronic device

A semiconductor device that can be scaled down or highly integrated is provided. The semiconductor device includes a first layer and a second layer over the first layer. The first layer and the second layer each include a transistor. The transistor in the first layer and the transistor in the second layer each include a first oxide, a first conductor and a second conductor over the first oxide, a first insulator placed to cover the first conductor, the second conductor, and the first oxide, a second insulator over the first insulator, a second oxide placed between the first conductor and the second conductor over the first oxide, a third insulator over the second oxide, a third conductor over the third insulator, and a fourth insulator in contact with a top surface of the second insulator, a top surface of the second oxide, a top surface of the third insulator, and a top surface of the third conductor. The first insulator and the fourth insulator are less likely than the second insulator to allow oxygen to pass through.

A semiconductor device which can suppress leakage current between a wiring and a connection electrode connected to a floating node is provided. The semiconductor device includes a first insulator, a first conductor over the first insulator, a second conductor over the first insulator, and a second insulator over the first insulator, the first conductor, and the second conductor. The first conductor and the second conductor contain a metal A (one kind or a plurality of kinds of aluminum, copper, tungsten, chromium, silver, gold, platinum, tantalum, nickel, molybdenum, magnesium, beryllium, indium, and ruthenium). The metal A is detected in an interface between the first insulator and the second insulator by an energy dispersive X-ray spectroscopy (EDX). The second insulator includes a groove for exposing the first insulator between the first conductor and the second conductor.

A transistor includes a first insulator over a substrate; a first oxide thereover; a second oxide in contact with at least part of the top surface of the first oxide; a first conductor and a second conductor each in contact with at least part of the top surface of the second oxide; a third oxide that is over the first conductor and the second conductor and is in contact with at least part of the top surface of the second oxide; a second insulator thereover; a third conductor which is over the second insulator and at least part of which overlaps with a region between the first conductor and the second conductor; and a third insulator which is over the third conductor and at least part of which is in contact with the top surface of the first insulator. The thickness of a region of the first insulator that is in contact with the third insulator is less than the thickness of a region of the first insulator that is in contact with the first oxide.

Semiconductor device and method for manufacturing the same

To improve the electrical characteristics of a semiconductor device including an oxide semiconductor, and to provide a highly reliable semiconductor device with a small variation in electrical characteristics. The semiconductor device includes a first insulating film, a first barrier film over the first insulating film, a second insulating film over the first barrier film, and a first transistor including a first oxide semiconductor film over the second insulating film. The amount of hydrogen molecules released from the first insulating film at a given temperature higher than or equal to 400&#xb0; C., which is measured by thermal desorption spectroscopy, is less than or equal to 130% of the amount of released hydrogen molecules at 300&#xb0; C. The second insulating film includes a region containing oxygen at a higher proportion than oxygen in the stoichiometric composition.

Semiconductor device and manufacturing method of the same

In an oxide semiconductor film formed over an insulating surface, an amorphous region remains in the vicinity of the interface with the base, which is thought to cause a variation in the characteristics of a transistor and the like. A base surface or film touching the oxide semiconductor film is formed of a material having a melting point higher than that of a material used for the oxide semiconductor film. Accordingly, a crystalline region is allowed to exist in the vicinity of the interface with the base surface or film touching the oxide semiconductor film. An insulating metal oxide is used for the base surface or film touching the oxide semiconductor film. The metal oxide used here is an aluminum oxide, gallium oxide, or the like that is a material belonging to the same group as the material of the oxide semiconductor film.

Method for manufacturing oxide semiconductor film, method for manufacturing semiconductor device, and semiconductor device

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Kosei Nei