Hitachi High-tech Corporation

Hitachi-high-technologies Corporation

Kosa Hirota

Satomi Inoue

Shigeru Nakamoto

Tatehito Usui

Masahiro Sumiya

Nanako Tamari

Masahito Togami

Koichi Nakaune

Kousuke Fukuchi

Masahiro Nagatani

An object of the present invention is to provide a plasma processing method capable of removing complex depositions of metal and non-metal deposited in a processing chamber by etching processing of a wafer to reduce generation of particle due to the depositions, in a plasma processing method for plasma-etching the wafer such as a semiconductor substrate. According to the present invention, there is provided a plasma processing method for plasma-etching a sample in a processing chamber and plasma-cleaning the inside of the processing chamber, the method comprising: an etching step for plasma-etching a predetermined number of the samples; a metal removing step of removing a deposited film containing a metal element by using a plasma after the etching step; and a non-metal removing step of removing the deposited film containing the non-metal element by using a plasma different from the plasma in the metal removing step, in which the metal removing step and the non-metal removing step are repeated twice or more.

Plasma processing method

A plasma processing apparatus including a plasma processing chamber in which an electrode for placing a substrate to be processed is provided; a power supply; and a control device configured to control the power supply, in which the control device is configured to execute heat-retaining discharge under a first condition in which the substrate is not placed on the electrode inside the plasma processing chamber to generate first plasma to heat an inner wall surface to a first temperature, rapid temperature control discharge under a second condition to generate second plasma inside the plasma processing chamber to heat the inner wall surface to a second temperature higher than the first temperature, and product processing of controlling the power supply under a third condition in a state where the substrate is placed on the electrode to generate third plasma inside the plasma processing chamber to process the substrate.

Plasma processing apparatus and plasma processing method

A plasma processing apparatus includes: a detector configured to detect a change in an intensity of light emission from plasma formed inside a processing chamber; and a unit configured to adjust conditions for forming the plasma or processing a wafer arranged inside the processing chamber using an output from the detector, wherein the detector detects a signal of the intensity of light emission at plural time instants before an arbitrary time instant during processing, and wherein the adjusting unit removes the component of a temporal change of a long cycle of the intensity of light emission from this detected signal and detects the component of a short temporal change of the intensity of light emission, and adjusts the conditions for forming the plasma or processing a wafer arranged inside the processing chamber based on the short temporal change of the detected intensity of light emission.

Plasma processing apparatus and operational method thereof

A plasma processing method of processing layer structure previously formed on an upper surface of a wafer disposed in a processing chamber within a vacuum container and having a layer to be processed and an undercoating layer disposed under the layer by plasma in the processing chamber, includes a step of calculating an etching amount of the layer to be processed at time during processing of any wafer by using result of comparing real pattern data with detection pattern data obtained by combining two patterns of intensity having as parameter wavelength of interference light obtained by processing the layer structure containing three or more undercoating layers having different thickness and the layer to be processed in advance of the processing of the any wafer and a real pattern of intensity having as parameter the wavelength of the interference light obtained during processing of the layer structure on the any wafer.

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Tokyo, Japan

Kosa Hirota