Kanto Denka Kogyo Co., Ltd.

Korehito Kato

Yoshinao Takahashi

Yoshihiko Iketani

Hisashi Shimizu

Katsuya Fukae

Yukinobu Shibusawa

Tetsuya Fukasawa

Hiroki Takizawa

Shinichi Kawaguchi

Mitsuharu Shimoda

Sho Kikuchi

Yoshimasa Sakurai

Yuka Matsuta

Impurities are removed from a fluoroolefin having a structure of ═CFor ═CHF that has been obtained by a dehydrohalogenation reaction and that contains haloalkene, haloalkane, and/or haloalkyne impurities. Provided are: a method of purifying a fluoroolefin having a structure of ═CFor ═CHF, comprising bringing a fluoroolefin having a structure of ═CFor ═CHF that has been obtained by a dehydrohalogenation reaction and that contains at least one of haloalkane, haloalkene, and/or haloalkyne impurities into contact with a solid adsorbent to remove the impurities through adsorption; a high-purity fluoroolefin; and a production method therefor.

Purification method for fluoroolefin having structure of =CFor =CHF, high-purity fluoroolefin, and production method therefor

Provided is a novel etching gas composition that comprises a sulfur-containing unsaturated compound and that is useful for etching a stacked structure of silicon-based films. A dry etching gas composition comprises a sulfur-containing fluorocarbon compound that has an unsaturated bond and that is represented by general formula (1) of CFSwhere x, y, and z are 2&#x2264;x&#x2264;5, y&#x2264;2x, and 1&#x2264;z&#x2264;2.

Dry etching gas composition comprising sulfur-containing fluorocarbon compound having unsaturated bond and dry etching method using the same

Provided are a method of selectively etching a film primarily containing Si, such as polycrystalline silicon (Poly-Si), single crystal silicon (single crystal Si), or amorphous silicon (a-Si) as well as a method for cleaning by removing a Si-based deposited and/or attached matter inside a sample chamber of a film forming apparatus, such as a chemical vapor deposition (CVD) apparatus, without damaging the apparatus interior. By simultaneously introducing a monofluoro interhalogen gas (XF, where X is any of Cl, Br, and I) and nitric oxide (NO) into an etching or a film forming apparatus, followed by thermal excitation, it is possible to selectively and rapidly etch a Si-based film, such as Poly-Si, single crystal Si, or a-Si, while decreasing the etching rate of SiN and/or SiO. It is also possible to perform cleaning by removing a Si-based deposited and/or attached matter inside a film forming apparatus, such as a CVD apparatus, without damaging the apparatus interior.

Dry etching method or dry cleaning method

Provided is a novel etching gas composition that comprises a sulfur-containing compound and that can selectively etch SiOover low dielectric constant materials (low-k materials; SiON, SiCN, SiOCN, SiOC). A dry etching gas composition comprises a saturated and cyclic sulfur-containing fluorocarbon compound that is represented by general formula (1) of CFSwhere x, y, and z are 2&#x2264;x&#x2264;5, y&#x2264;2x, and 1&#x2264;z&#x2264;2.

Dry etching gas composition comprising sulfur-containing fluorocarbon compound and dry etching method using the same

This invention provides a cleaning method that uses a cleaning gas composition for a semiconductor manufacturing device, including a monofluorohalogen compound represented by XF (in which X is Cl, Br or I) as the main component, and provides a method for removing unwanted film, such as a Si-containing deposit, attached to the interior of the processing room or processing vessel after a processing operation without damaging the interior of the processing room or processing vessel using such monofluorohalogen compound.

Cleaning method of semiconductor manufacturing device

A dry etching gas composition is used which contains a saturated or unsaturated hydrofluorocarbon compound (excluding 1,2,2,3-pentafluorocyclobutane and 1,1,2,2-tetrafluorocyclobutane) represented by a general formula (1):CxHyFz(where x, y, and z are integers that satisfy 2&#x2264;x&#x2264;4, y+z&#x2264;2x+2, and 0.5&#x3c;z/y&#x3c;2). Use of the etching gas composition containing the above-described hydrofluorocarbon makes it possible to selectively etch a nitrogen-containing silicon-based film (b1) with respect to a silicon oxide film, a non-silicon-based mask material, or a polycrystalline silicon film.

Dry etching gas composition and dry etching method

Provided is a plasma etching method that enables, in a semiconductor fabrication process, selective processing of a film consisting of a single material, such as SiOor SiN, or a composite material of SiOand SiN over a mask material as well as processing into satisfactorily vertical processed shapes. It is possible, for example, to enhance selectivity over a mask material or other materials excluding an etching target, to reduce damage on sidewalls, and to suppress etching in the lateral direction by generating a plasma of a gas compound having a thioether skeleton represented by general formula (1) or a mixed gas thereof and etching a film consisting of a composite material or a single material, such as SiOor SiN, thereby depositing a protective film that contains sulfur atoms and has a lower content of fluorine atoms than the cases of using common hydrofluorocarbon gases:general formula (1): Rf&#x2014;S&#x2014;Rf&#x2003;&#x2003;(1)where Rfis a monovalent organic group represented by CHFand Rfis a monovalent organic group represented by CHF.

Plasma etching method using gas molecule containing sulfur atom

A method of atomic layer etching a silicon oxide film or a silicon nitride film is provided. Atomic layer etching (ALE) is performed by repeating three steps of (1) hydrogenation step of hydrogenating a surface by irradiating a silicon oxide film or a silicon nitride film with a plasma containing H, (2) acid halide adsorption step of causing chemisorption of an acid halide represented by a formula of Rf&#x2014;COX (Rf is H, F, a substituent consisting of C and F or consisting of C, H, and F, or &#x2014;COX; each X is independently any halogen atom of F, Cl, Br and I) on the surface by reacting the acid halide with the hydrogenated surface through exposure to the acid halide, and (3) etching step of etching a single atomic layer by inducing chemical reactions on the surface of the acid halide-adsorbed silicon oxide film or silicon nitride film through irradiation with a plasma containing a noble gas (at least any one of He, Ar, Ne, Kr, and Xe).

Atomic layer etching using acid halide

A chlorine fluoride feeding device and feeding process are provided that can stably generate industrially applicable chlorine fluoride (ClF), control flow rate, and provide continual feed. The feeding process of chlorine fluoride of this invention is a feeding process to feed chlorine fluoride generated by loading a gas that contains fluorine atoms and a gas that contains chlorine atoms to a flow-type heat reactor or a plasma reactor, and it can stably generate and safely feed chlorine fluoride for a long time by reacting chlorine fluoride that is difficult to pack at a high pressure, such that an amount that can be packed in a gas container such as a gas cylinder is limited, with two or more types of gas materials that can be packed safely in a gas container by liquefaction, or with such gas material and a solid material.

Feeding process of chlorine fluoride

A silicon oxide film or a silicon nitride film is selectively etched by using an etching gas composition including a hydrofluorocarbon that has an unsaturated bond in its molecule and is represented by CxHyFz, wherein x is an integer of from 3 to 5, and relationships y+z&#x2264;2x and y&#x2264;z are satisfied. Also, a silicon oxide film is etched with high selectivity relative to a silicon nitride film by controlling the ratio among the hydrofluorocarbon, oxygen, argon, etc., included in the hydrofluorocarbon-containing etching gas composition.

Gas composition for dry etching and dry etching method

Provided are an etching gas composition and an etching method which enable an object, such as a substrate to be etched, to be efficiently precision processed during thin film formation, and which enable efficient removal of an accumulated or adhered silicon-based compound, other than the object such as the substrate to be etched, by means of plasma etching. The etching gas composition is characterized by containing: (1) a fluorinated halogen compound represented by XF (X is Cl, Br or I) as a primary component; (2) F; (3) a fluorinated halogen compound represented by XF(X is Cl, Br or I, and n is an integer of 3 or higher); (4) HF; (5) O; and (6) at least one type of halogen gas molecule selected from among Cl, Brand I.

Growing community of inventors

Shibukawa, Japan

Korehito Kato