Mitsubishi Electric Corporation

Mitsubishi Denki Kabushiki Kaisha

Korehide Okamoto

Arata Iizuka

Shintaro Araki

Ryoji Murai

Ryoya Shirahama

Shoji Saito

Khalid Hassan Hussein

Shinji Hatae

Takaaki Shirasawa

Mitsunori Aiko

Yuki Hata

Seiji Saiki

Natsuki Tsuji

Hideki Tsukamoto

Takuro Mori

Masaru Furukawa

Takamasa Oda

Takeshi Ogawa

Katsuji Ando

Takatoshi Yasui

Yosuke Miyagi

An object of the present invention is to provide a technique capable of reducing a gap between a first semiconductor device and a second semiconductor device that are bonded. At least one of a pair of a first electrode of the first semiconductor device and a second electrode of the second semiconductor device and a pair of a second electrode of the first semiconductor device and a first electrode of the second semiconductor device is electrically connected, and for each of the first semiconductor device and the second semiconductor device, each of a thickness of a portion from a first connected portion to a second connected portion and a thickness of a holding member are equal to or less than a thickness of a first main body portion or a thickness of a second main body portion.

Semiconductor device

Provided are a semiconductor device and an inverter device with a decrease in yield being suppressed by preventing the adhesive from leaking into the inside of the semiconductor device. A heat sink, a wiring board provided on the heat sink, a semiconductor chip provided on the wiring board, a case housing provided on the heat sink so as to surround the wiring board and the semiconductor chip, an adhesive that adheres a lower surface joint portion of the case housing and an upper surface joint portion of the heat sink, a sealing material that fills the case housing and covers the wiring board and the semiconductor chip, and a convex portion provided on the lower surface joint portion of the case housing or the upper surface joint portion of the heat sink, that separates the adhesive from the sealing material are included.

Semiconductor device and inverter device

A semiconductor device includes a semiconductor element, a heat sink on which the semiconductor element is mounted, and a case made of resin, the case being mounted on the heat sink and containing the semiconductor element. A fastening hole is formed passing through the case and the heat sink. The case includes a surface pressure absorbing member on a portion including the fastening hole in plan view, the surface pressure absorbing member having a plate shape and being higher in rigidity than the resin.

Semiconductor device including surface pressure absorbing member for fastening heat sink

A first heat sink has a first inner surface and a first outer surface, and has a first through hole. A second heat sink has a second inner surface disposed with a clearance left from the first inner surface of the first heat sink, and a second outer surface opposite to the second inner surface, and has a second through hole. A semiconductor element is disposed within a clearance between the first inner surface of the first heat sink and the second inner surface of the second heat sink. A sealing member seals the semiconductor element within the clearance between the first inner surface and the second inner surface. A first hollow tube is made of metal, and connects the first through hole and the second through hole.

The mold device according to the present invention is a mold device to resin-seal the semiconductor device including an insert electrode, and in the semiconductor device, the insert electrode is provided with an insert hole, a nut having a screw hole is disposed in the insert electrode so that the insert hole and the screw hole communicate with each other, the mold device includes a mold body into which resin is injected to resin-seal the semiconductor device, including a side of the insert electrode where the nut is disposed, and a rod-like member that is inserted into the insert hole, and the rod-like member is inserted into the screw hole of the nut through the insert hole of the insert electrode to draw the nut to the side of the insert electrode.

Mold device

The present invention relates to a semiconductor device module which includes: a semiconductor device including a top electrode and a bottom electrode; a substrate on which the bottom electrode of the semiconductor device is bonded; a heat sink on which the substrate is mounted; a lead electrode through which a main current of the semiconductor device flows; an insulating case disposed to enclose the substrate; and a retainer disposed in a cantilevered manner in the insulating case, the retainer supporting the lead electrode, wherein the lead electrode has one end brazed to the top electrode of the semiconductor device, and another end side inserted into a wall of the insulating case, and the retainer is engaged on the one end of the lead electrode to restrict movement of the lead electrode.

Semiconductor device module

According to the present invention, a grease layer having a grease as a constituent material is provided in a filling region lying between a heat dissipation surface that is a bottom surface of a heat dissipation material of a semiconductor module and a surface of a cooler. Further, a seal material is formed on the surface of the cooler and covers the entire side surface region of the grease layer without any gap. The seal material has a liquid curable sealing agent as a constituent material.

A power module includes a first semiconductor device having a collector terminal and an emitter terminal which extend outwardly from a molded resin, wherein at least one of the collector and emitter terminals is a bilaterally extending terminal extending outwardly from two opposite surfaces of the molded resin, and a second semiconductor device having the same construction as the first semiconductor device. The bilaterally extending terminal of the first semiconductor device is connected to a bilaterally extending terminal of the second semiconductor device.

Power module

The present invention is to provide a power semiconductor device including a heat radiator having a principal surface and an insulating substrate bonded on the principal surface of the heat radiator via a first solder layer. The power semiconductor device also includes at least one semiconductor chip mounted on the insulating substrate via a second solder layer. The insulating substrate has a thin-layer and thick-layer edges, and is bonded on the principal surface of the heat radiator so that the first solder layer has a thickness thinner towards a direction from the thin-layer edge to the thick-layer edge (T >T ). Also, the semiconductor chip is mounted on the insulating substrate so that a first distance between the thick-layer edge and the semiconductor chip is less than a second distance between the thin-layer edge and the semiconductor chip (L <L ).

Growing community of inventors

Fukuoka, Japan

Korehide Okamoto