Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Osram Oledgmbh

Fraunhofer-gesellschaft Zur Foerderung Der Angewandten Forschung E.v.

Osram Opto Semiconductor Gmbh

Ams-osram International Gmbh

Korbinian Perzlmaier

Christian Leirer

Alexander F Pfeuffer

Anna Kasprzak-Zablocka

Heribert Zull

Kerstin Neveling

Berthold Hahn

Tobias Meyer

Jens Dennemarck

Thomas Veit

Frank Singer

Franz Eberhard

Sebastian Wittmann

Stefanie Rammelsberger

Mathias Kämpf

Kai Gehrke

Ruth Boss

Siegfried Herrmann

Erwin Lang

Karl Engl

Martin Rudolf Behringer

Tansen Varghese

Marc Philippens

Petrus Sundgren

Andreas Biebersdorf

Peter Stauss

Bruno Jentzsch

Jens Mueller

Robert Walter

Christine Rafael

Julia Stolz

Christian Mueller

Christian Eichinger

Lutz Hoeppel

Markus Maute

Isabel Otto

Fabian Kopp

Jürgen Off

Andreas Plöβl

Guido Weiss

Mathias Kaempf

Julian Ikonomov

Bernd Böhm

Tobias Gotschke

Ewald Karl Michael Günther

Thomas Schwarz

Stefan Illek

Simon Jerebic

Lutz Höppel

Andreas Ploessl

Matthias Peter

Christoph Klemp

Ivar Tangring

Simeon Katz

Sebastian Taeger

Christian Schmid

Juergen Off

Michael Huber

Vincent Grolier

Bernd Boehm

Guenter Spath

Michael Schmal

Bjoern Muermann

Robert Schulz

Ingo Neudecker

Rolf Aidam

Richard Floeter

Björn Muermann

Jürgen Däubler

Thorsten Passow

Tobias Berthold

An optoelectronic semiconductor component may include a semiconductor body having a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type, as well as a first surface and a second surface different from the first surface. The component may further include a first contact structure for electrically contacting the first semiconductor region and a second contact structure for electrically contacting the second semiconductor region. The first and second contact structures may each have a first connection region arranged on the first surface and a second connection region arranged on the second surface for electrically contacting the semiconductor component from the outside. The first and second connection regions of the first contact structure and the first and second connection regions of the second contact structure may each be designed to be rotationally symmetrical with respect to an axis of symmetry.

Optoelectronic semiconductor component

The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.

U-LED, U-LED device, display and method for the same

μ-LED, μ-LED device, display for augmented reality or lighting applications

The invention relates to a method for manufacturing modules with one or more optoelectronic components, comprising the steps: producing at least one layer stack providing a base module on a carrier having a first layer, an active layer formed thereon, and a second layer formed thereon; exposing a surface area of the first layer facing away from the carrier; forming a first contact to a surface region of the second layer facing away from the carrier; and forming a second contact to the surface area of the first layer facing away from the carrier.

LED module, LED display module and method of manufacturing the same

An optoelectronic semiconductor component includes a layer stack, a first and second contact means, an electrically conductive edge layer, and a first dielectric layer. The layer stack includes a side surface and a first and a second main surface. The first and second contact means may be arranged at the first and second main surfaces, respectively. Said contact means may electrically contact a first and second semiconductor region of the layer stack, respectively. The second contact means may be radiation-transmissive. The electrically conductive edge layer may be arranged on the layer stack and extend from the second contact means over the side surface as far as the first main surface. The first dielectric layer may be arranged between the edge layer and the layer stack. The second main surface may not be covered by the first dielectric layer.

Optoelectronic semiconductor component and production method

An optoelectronic arrangement is specified, including a moulded body having a base surface, a first pixel group with a multiplicity of pixels assigned thereto, each having a first semiconductor region, a second semiconductor region and an active region, a multiplicity of separating structures arranged between the pixels, and at least one first contact structure having a first contact plane and a first contact location, which is freely accessible at the base surface, wherein the pixels of the first pixel group are arranged alongside one another at the top surface, the first semiconductor regions and/or the second semiconductor regions of adjacent pixels of the first pixel group are electrically insulated from one another by means of the separating structures, a first contact structure is assigned one-to-one to the first pixel group, and the first semiconductor regions of the pixels of the first pixel group are electrically conductively connected to one another by means of the first contact plane and are electrically contactable by means of the first contact location.

Optoelectronic arrangement and method for producing an optoelectronic arrangement

In an embodiment a method for producing a component having a carrier and at least one component part electrically conductively connected to the carrier and mechanically fixed to the carrier by an electrically insulating bonding layer includes providing the carrier having a connection layer, wherein the bonding layer is disposed on the carrier and has at least one opening, wherein a connection surface of the connection layer is exposed, and wherein the bonding layer projects vertically beyond the exposed connection surface or vice versa, applying the component part having a contact layer on the carrier in such that, in top view of the carrier, an exposed contact surface of the contact layer covers the opening and the connection surface located therein, wherein the exposed contact surface is spaced apart from the exposed connection surface by a vertical distance and reducing the vertical distance by changing a volume of the bonding layer such that the exposed contact surface and the exposed connection surface are brought together, such that they are directly adjacent to each other and such that a direct electrical contact is formed between the contact layer and the connection layer.

Method for producing a component, and component

A support structure for receiving planar microchips, comprising a planar support substrate and at least two receiving elements. The receiving elements are connected to the carrier substrate and configured in such a way that they detachably hold a flat microchip between the at least two receiving elements in such a way that the microchip can be moved out with a defined minimum force transversely to a support structure plane.

Multi-chip carrier structure

μ-LED, μ-LED device, display and method for the same

In an embodiment a component assembly includes a plurality of components, a carrier, wherein the components are secured on the carrier by a connecting layer, wherein, for each component, the connecting layer forms at least one supporting structure at which the connecting layer is adjacent to the component, and a sacrificial layer arranged regionally between the components and the connecting layer, wherein one portion of the components is assigned to a first group, wherein a further portion of the components is assigned to a second group, and wherein the components of the first group are different than the components of the second group in respect of a coverage with the sacrificial layer.

Interbonded components, method for detaching components from interbonded components, and method for producing interbonded components

An optoelectronic semiconductor chip may have or include an x-doped region, a y-doped region, an active region arranged between the x-doped region and the y-doped region, and an x-contact region. The x-contact region may be arranged to the side of the x-doped region facing away from the active region. The x-contact region may include at least one first region and at least one second region. The x-contact region may be designed such that, during operation of the optoelectronic semiconductor chip, more charge carriers are injected into the x-doped region via the second region than via the first region.

Optoelectronic semiconductor chip and method for producing an optoelectronic semiconductor chip

In one embodiment, the optoelectronic semiconductor device comprises a semiconductor layer sequence and an electrical via. The semiconductor layer sequence includes an active zone for generating radiation and a contact layer for electrical contacting. The active zone lies in a plane perpendicular to a main growth direction of the semiconductor layer sequence and is located between a first semiconductor region and a second semiconductor region. The contact layer is located within the second semiconductor region. The via extends through the contact layer and preferably ends within the second semiconductor region. A contact surface between the via and the contact layer encloses a contact angle of at least 20° and at most 60° with respect to the plane.

Optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component

A radiation-emitting semiconductor chip may include a semiconductor body, a reflector, at least one cavity, and a seal. The semiconductor body may include an active region configured to generate electronic radiation. The reflector may be configured to reflect a portion of the electromagnetic radiation. The cavity may be filled with a material having a refractive index not exceeding 1.1. The seal may be impermeable to the material. The cavity may be arranged between the reflector and the semiconductor body, and the seal may cover the underside of the reflector.

Radiation-emitting semiconductor chip and a method for producing a radiation-emitting semiconductor chip

An optoelectronic semiconductor element may include an optoelectronic semiconductor chip. The optoelectronic semiconductor chip may include a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a first contact element connected to the first semiconductor layer in an electrically conductive manner, and a second contact element connected to the second semiconductor layer in an electrically conductive manner. The first semiconductor layer and the second semiconductor layer are arranged one above the other to form a layer stack. The first semiconductor layer to where the second semiconductor layer is exposed. The first contact element is arranged over the first semiconductor layer, and the second contact element is arranged over the first semiconductor layer.

Optoelectronic semiconductor component comprising a first and second contact element, and method for producing the optoelectronic semiconductor component

A method for sorting optoelectronic semiconductor components is specified. The semiconductor components each include an active region for emission or detection of electromagnetic radiation. The method includes the following steps: introducing the semiconductor components into a sorting region on a specified path; irradiating the optoelectronic semiconductor components with electromagnetic radiation of a first wavelength range to generate dipole moments by charge separation in the active regions of the optoelectronic semiconductor components; and deflecting the optoelectronic semiconductor components from the specified path as a function of their dipole moment by means of a non-homogeneous electromagnetic field. A device for sorting optoelectronic semiconductor components is further specified.

Method for sorting optoelectronic semiconductor components and device for sorting optoelectronic semiconductor components

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Wuppertal, Germany

Korbinian Perzlmaier