Hitachi, Ltd.

Kootaroo Koizumi

Takeshi Kimura

Sukeyoshi Tsunekawa

Keisuke Funatsu

Kenichi Kawasumi

An organic film removing method uses an organic film removing apparatus comprising a processing vessel defining a processing chamber, a wafer support for supporting a semiconductor wafer within the processing chamber, and a mixed gas supplier for supplying a mixed gas consisting of an alcohol or alcohols, and ozone gas or an ozone-containing gas into the processing chamber so that the mixed gas acts on an organic film pattern on the surface of the supported semiconductor wafer. The apparatus continuously supplies the mixed gas into the processing chamber at least in a period between a time immediately before mounting the semiconductor wafer on the wafer support and a time when the organic film is removed completely; conveys the semiconductor wafer into the processing chamber; supports the semiconductor wafer within the processing chamber; and heats the patterned organic film on the surface of the supported semiconductor wafer at a temperature in a range below a temperature at which substantial defects will be formed in the elements of a semiconductor device to be formed on the semiconductor wafer. This method is capable of ashing the organic film at an ashing rate equal to or higher than an ashing rate at which a known organic film removing method employing a steam-containing ozone gas ashes the organic film, and of reducing water marks as compared with the known method employing the steam-containing ozone gas.

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Kodaira, Japan

Kootaroo Koizumi