Samsung Electronics Co., Ltd.

Koong-Hyun Nam

Sang-Hoon Lee

Ki-Hyun Hwang

Jin-Gyun Kim

Dong-Kyum Kim

Hyun-Yong Go

Eun-Young Lee

Jung-Ho Kim

Myoung-Bum Lee

Jung-Geun Jee

Hun-hyeong Lim

Kyung-Tae Jang

Seung-Mok Shin

Tae-Jong Han

Ju-Wan Kim

Sung-Hae Lee

Ji-Youn Seo

Ji-Woon Im

Eun-Yeoung Choi

In a method of forming an oxide layer of a semiconductor process, a preliminary precursor flow is provided on a substrate in a deposition chamber to form a preliminary precursor layer, a precursor flow and a first oxidizing agent flow are provided on the preliminary precursor layer alternately and repeatedly to form precursor layers and first oxidizing agent layers alternately stacked on the preliminary precursor layer, and a second oxidizing agent flow is provided on the precursor layer or the first oxidizing agent layer alternately stacked to form a second oxidizing agent layer.

Methods of manufacturing semiconductor devices including an oxide layer

In a method of a vertical memory device, insulation layers and sacrificial layers are alternately and repeatedly formed on a substrate. A hole is formed through the insulation layers and the sacrificial layers that expose a top surface of the substrate. Then, an interior portion of the hole may be enlarged. A semiconductor pattern is formed to partially fill the enlarged portion of the hole. A blocking layer, a charge storage layer and a tunnel insulation layer may be formed on a sidewall of the hole and the semiconductor pattern. Then, the tunnel insulation layer, the charge storage layer and the blocking layer are partially removed to expose a top surface of the semiconductor pattern. A channel is formed on the exposed top surface of the semiconductor pattern and the tunnel insulation layer. The sacrificial layers are replaced with gate electrodes.

Vertical memory devices and methods of manufacturing the same

A non-volatile memory device having a vertical structure includes a semiconductor layer, a sidewall insulation layer extending in a vertical direction on the semiconductor layer, and having one or more protrusion regions, first control gate electrodes arranged in the vertical direction on the semiconductor layer, and respectively contacting one of portions of the sidewall insulation layer where the one or more protrusion regions are not formed and second control gate electrodes arranged in the vertical direction on the semiconductor layer, and respectively contacting one of the one or more protrusion regions.

Non-volatile memory device having a vertical structure and method of fabricating the same

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Anyang-si, South Korea

Koong-Hyun Nam