Capella Microsystems Inc.

Vishay Semiconductor Gmbh

Other

Koon Wing Tsang

Yuh-Min Lin

Jia Yang Koo

James W Holm-Kennedy

Brian N Kuo

Ing-Jye Lan

Chih-Cheng Chien

Datong Yang

Pei-Ling Hsu

Techniques for generating an indication of ambient light intensity are provided. The techniques include obtaining a set of one or more low light level measurements during a low light level display panel period of a display; obtaining a set of one or more high light level measurements during a high light level display panel period of the display; generating an ambient light level result based on analysis of the set of one or more low light level measurements, the set of one or more high light level measurements, and calibration information; and controlling brightness of the display based on the ambient light level result.

Light level sensor for device with display

Techniques for generating an indication of ambient light intensity are provided. The techniques include obtaining a set of one or more low light level measurements during a low light level display panel period of a display; obtaining a set of one or more high light level measurements during a high light level display panel period of the display; and generating an ambient light level result based on analysis of the set of one or more low light level measurements, the set of one or more high light level measurements, and calibration information.

The present invention provides a multi-cavity Fabry-Perot ambient light filter apparatus. The multi-cavity Fabry-Perot ambient light filter apparatus comprises a plurality of Fabry-Perot cavities, each of the plurality of Fabry-Perot cavities covering one of a plurality of photodiodes; wherein each of the plurality of Fabry-Perot cavities has two partially reflective layers and one interferometric layer sandwiching between the two partially reflective layers, and shares one of the two partially reflective layers with a neighboring Fabry-Perot cavity and thereby stair stacking with the neighboring Fabry-Perot cavity. The plurality of Fabry-Perot cavities are capable of blocking the ambient light except for a wavelength spectrum that is recognizable for human eyes, thereby effectively accomplishes excellent IR blocking from non-visible light spectra.

Multi-cavity Fabry-Perot ambient light filter apparatus

A light source of testing a sensor, a test apparatus and a method are disclosed. The test apparatus includes a light source, a photo-mask and a sensor bearing area. The light source includes a plurality of light emitting diodes with parallel connection for emitting a test light. The light source is disposed in a photo-mask. The photo-mask has a diffuser interface. The test light is then diffused to the outside of the photo-mask through the diffuser interface. The sensor bearing area is for bearing the sensor. The sensor bearing area is disposed at the outside of the photo-mask and locates at a position to enable the test light to reach. Therefore, the test light emitted by the light source is used to test the sensor.

Light source of testing light sensor, test apparatus and method

An anti-reflective coating having a composite layer of silicon nitride and silicon dioxide may be formed over the entire photosensitive region of the photodetector to minimize the amount of reflection. The composite layer comprises a silicon nitride layer and a dielectric layer contiguous to the silicon nitride layer. The anti-reflective coating may be formed in a CMOS process for fabricating the PN junction in the photodiode and CMOS devices for amplifying the photodetector signal, where the polysilicon gate layer is used as a etch stop. The P+ or N+ material in the PN junction of the photodiode has a distributed design where two portions of the region are separated by a distance in the range of Xd to 2Xd, where Xd is the one-sided junction depletion width, to enhance the electric field and to reduce the distance traveled by the carriers for enhancing bandwidth. A heavily doped region of the opposite type may be added between the two portions to further enhance the electric field. A mask is used to shield a portion of the substrate in which the photodetector region has been or is to be formed when other portions of the substrate region are implanted with a dopant to adjust at least one of the threshold voltages of the other portions. The mask prevents the photodetector region from being affected by such implant.

Photodetector and device employing the photodetector for converting an optical signal into an electrical signal

A first device comprising a first current mirror is used to amplify the output of a first photodetector. A second device comprising a current mirror arrangement is employed to amplify the output of a second photodetector. The outputs of the two devices are then compared to provide a signal useful for many applications, including that for determining the position of a rotating member or of a member in relative motion to another member. Preferably, no feedback action is used for the amplification of the output of at least one of the photodetectors.

Photodetection system and circuit for amplification

An anti-reflective coating having a composite layer of silicon nitride and silicon dioxide may be formed over the entire photosensitive region of the photodetector to minimize the amount of reflection. The composite layer comprises a silicon nitride layer and a dielectric layer contiguous to the silicon nitride layer. The anti-reflective coating may be formed in a CMOS process for fabricating the PN junction in the photodiode and CMOS devices for amplifying the photodetector signal, where the polysilicon gate layer is used as a etch stop. The P&plus; or N&plus; material in the PN junction of the photodiode has a distributed design where two portions of the region are separated by a distance in the range of Xd to 2Xd, where Xd is the one-sided junction depletion width, to enhance the electric field and to reduce the distance traveled by the carriers for enhancing bandwidth. A heavily doped region of the opposite type may be added between the two portions to further enhance the electric field. A mask is used to shield a portion of the substrate in which the photodetector region has been or is to be formed when other portions of the substrate region are implanted with a dopant to adjust at least one of the threshold voltages of the other portions. The mask prevents the photodetector region from being affected by such implant.

A top incident spectrometer includes a first distributed wavelength wedge filter region of order n.sub.1 that discriminates incoming radiation as a function of wedge location, at least one second wedge region order n.sub.2 (which region may be a graded dielectric film), and an underlying detector array. In another embodiment, a second dielectric wedge element includes a Fabrey-Perot etalon, a wedge dielectric film, or a graded index film matching the second dielectric wedge region to an underlying substrate. One or more slopes associated with wedge elements may also be varied to alter filter characteristics. Spatial characteristics may further be modified by including a dielectric material whose dielectric constant varies as a function of location. Wedge filter crosstalk is minimized by partitioning a wedge dielectric region in the lateral dimension. Another embodiment provides an edge incident spectrometer including an optical waveguide or thin film structure whose spatial optical impedance varies as a function of position. Outcoupling of optical radiation occurs as a function of wavelength along the spectrometer propagation direction. Outcoupling of optical radiation may also be made to overlying structures, or to regions within a common, preferably solid state, structure. Wedge structures may further be combined to intentionally create gaps in the spectral transmission for a filter structure. A shadow masking fabricates thin film elements having spatially varying features. A material is deposited onto a substrate using an edge to provide a shadow mask affecting the deposition stream.

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Fremont, CA, United States of America

Koon Wing Tsang