Snu Rdb Foundation

Samsung Display Co., Ltd.

Seoul National University

Korea Institute of Science and Technology

Korea Research Institute of Chemical Technology

Gwangju Institute of Science and Technology

Kookheon Char

Seonghoon Lee

Jaehoon Lim

Dong-Hoon Lee

Jong Hyuk Kang

Jae Byung Park

Jong Hak Kim

Wanki Bae

Junghan Shin

Jeewoo Lim

Hoon Sik Kim

SAng Hyeon Kang

Changhee Lee

Seong Hoon Lee

Minki Nam

Sewon Oh

Euijoon Yoon

Yong Soo Kang

Sang Il Seok

Yongku Kang

Won Tae Joe

Changjin Lee

Wan Ki Bae

Hong Hie Lee

Jongok Won

Myung-Han Yoon

Moon Young Jin

Kahp-Yang Suh

Tae-Lim Choi

Sanghee Yang

Hee Jung Kim

Yunshik Cho

Donggu Lee

Hyunsik Yoon

Heeje Woo

Joohyun Jung

Hosub Kim

Hyuck Hur

Jiyun Song

Jong Goo Kang

Sang-Hyun Chu

Saibom Park

Jae-Hyuk Lee

Eun-Hye Kang

Unho Jung

Eui Tae Kim

The present disclosure relates to a polysulfide copolymer particle and a method of preparing the polysulfide copolymer particle.

Polysulfide copolymer particle and method of preparing the same

The present disclosure relates to a cyclic polysulfane-based polymer, a cyclic polysulfane-polynorbornene block copolymer, a method of preparing the cyclic polysulfane-based polymer, a method of preparing the cyclic polysulfane-polynorbornene block copolymer, and a film including the cyclic polysulfane-polynorbornene block copolymer.

Cyclic polysulfane-based polymer, method for preparing same, and film comprising same

Provided are an organic thin film transistor, a method for manufacturing the same, and a method for recovering insulation thereof. Specifically, the organic thin film transistor includes a substrate, a gate electrode, a semiconductor pattern, a source electrode, a drain electrode and a gate insulation layer. The gate electrode is disposed on the substrate. The semiconductor pattern is electrically insulated with the gate electrode on the substrate. The source electrode and the drain electrode are each electrically connected to the semiconductor pattern on the substrate, and are separated from each other. The gate insulation layer is disposed between the semiconductor pattern and the gate electrode. The gate insulation layer is a sulfur copolymer thin film.

Organic thin film transistor, method for manufacturing the same and method for recoverying insulation thereof

This disclosure relates to a method for preparing organic microbubble complex particles including sonicating an aqueous solution including a graphene compound and an amphiphilic material in the presence of a gas, a method for preparing organic microbubble complex particles including injecting an aqueous solution including a graphene compound and an amphiphilic material into a microchannel, and an organic microbubble complex particle including a core part including at least one gas selected from the group consisting of an inert gas and carbon dioxide, and a shell layer including a graphene compound and an amphiphilic material, and an ultrasound contrast agent including the organic microbubble complex particles.

Preparation method of organic microbubble complex particle, organic microbubble complex particle, and ultrasound contrast agent

An exemplary method of manufacturing a light-absorbing layer and a method of manufacturing a semiconductor device including the same light-absorbing layer are provided. The exemplary method includes: forming a nanoparticles film by applying a semiconductor nanoparticles solution on a substrate; thermally treating the nanoparticles film at least one time to cause adhesion among the nanoparticles; and forming a light-absorbing layer by applying a light-absorbing solution on the nanoparticles film.

Method of manufacturing light-absorbing layer having semiconductor nanoparticles and method of manufacturing semiconductor device having the same light-absorbing layer

The present invention relates to an optical film comprising a substrate on which an array of structures is formed, wherein a material having a different refractive index, absorbancy or reflectivity from that of a surface of the structures is partially coated on the surface of the structures, and a manufacturing method thereof. Specifically, the optical film according to one embodiment of the present invention may have a different transparency depending on the direction or can transmit light asymmetrically. Further, the optical film may be applicable to image devices, which need to change brightness or images depending on the angle of view or to display three-dimensional images.

Optical film with partially coated structure array and manufacturing method thereof

Provided are quantum dots having a gradual composition gradient shell structure which have an improved luminous efficiency and optical stability, and a method of manufacturing the quantum dots in a short amount of time at low cost. In the method, the quantum dots can be manufactured in a short amount of time at low cost using a reactivity difference between semiconductor precursors, unlike in uneconomical and inefficient conventional methods where shells are formed after forming cores and performing cleaning and redispersion processes. Also, formation of the cores is followed by formation of shells having a composition gradient.

Quantum dots having composition gradient shell structure and manufacturing method thereof

Provided are a nitride thin film structure and a method of forming the same. If a nitride thin film is formed on a substrate that is not a nitride, many defects are generated by a difference in lattice constants between the substrate and the nitride thin film. Also, there is a problem of warping the substrate by a difference in thermal expansion coefficients between the substrate and the nitride thin film. In order to solve the problems, the present invention suggests a thin film structure in which after coating hollow particles, i.e. hollow structures on the substrate, the nitride thin film is grown thereon and the method of forming the thin film structure. According to the present invention, since an epitaxial lateral overgrowth (ELO) effect can be obtained by the hollow structures, high-quality nitride thin film can be formed. Since a refractive index in the thin film structure is adjusted, there is an effect of increasing light extraction efficiency during manufacturing the thin film structure into a light emitting device such as a light emitting diode (LED). Also, when thermal expansion coefficient of the substrate is greater than that of the nitride thin film, total stress of the nitride thin film is decreased according to the compression of the hollow structures in the nitride thin film such that there is also an effect of preventing warpage of the substrate.

Structure of thin nitride film and formation method thereof

Disclosed are a quantum dot-block copolymer hybrid, methods of fabricating and dispersing the same, a light emitting device including the same, and a fabrication method thereof. The quantum dot-block copolymer hybrid includes; a quantum dot, and a block copolymer surrounding the quantum dot, wherein the block copolymer has a functional group comprising sulfur (S) and forms a chemical bond with the quantum dot.

Quantum dot-block copolymer hybrid, methods of fabricating and dispersing the same, light emitting device including the same, and fabrication method thereof

A method of manufacturing a quantum dot, the method including: mixing of a Group II precursor and a Group III precursor in a solvent to prepare a first mixture; heating the first mixture at a temperature of about 200&#xb0; C. to about 350&#xb0; C.; adding a Group V precursor and a Group VI precursor to the first mixture while maintaining the first mixture at the temperature of about 200&#xb0; C. to about 350&#xb0; C. to prepare a second mixture; and maintaining the second mixture at the temperature of about 200&#xb0; C. to about 350&#xb0; C. to form a quantum dot.

Method of manufacturing quantum dot

A metal ion sensor is provided. The metal ion sensor includes a nanoparticle core doped with a first luminescent material and a shell enclosing the nanoparticle core. The shell includes a second luminescent material and binding sites of outer metal ions. The first luminescent material and the second luminescent material emit light with mutually different colors when excited by an excitation source. The luminescence intensity of the light emitted from the second luminescent material varies in accordance with the binding amount of the outer metal ions, such that the emission color of the combined luminescence of the first luminescent material and the second luminescent material is changed.

Metal ion sensor and fabricating method thereof

The present invention relates to a facilitated transport membrane for separation of alkene hydrocarbons from hydrocarbon mixtures, comprising a porous support and a solid polymer electrolyte consisting of a transition metal salt and a polymer having phthalic structure, in which the electrolyte is in solid state at its operating temperature. The facilitated transport membrane is prepared by forming a solid polymer electrolyte consisting of a transition metal salt and a polymer on a porous support. The transition metal salt can selectively and reversibly form a complex with alkene hydrocarbons and the polymer can dissociate the transition metal salt. In particular, the polymer matrix allows the transition metal salt to be well dissociated because it has a phthalic structure capable of being coordinated to a transition metal ion.

Facilitated transport membranes comprising a porous support and a solid polymer electrolyte consisting of a transition metal salt and a polymer having phthalic structure

The present invention relates to polyalkylene oxide porogens having hyper-branches and low dielectric-constant insulators using them. More particularly, the present invention relates to polyalkylene oxide porogens having hyper-branches expressed by the following formula (1), where the polyalkylene oxide porogen has a center molecular (D) having branches (W), and low dielectric-constant insulators having nanopores prepared by coating a mixture of the porogen and a high heat-resistant resin such as polysilsesquioxane and thermal treating the coated substrate at a temperature effective to degrade the porogen.D&#xe00c;Y&#x2014;W)&#x2003;&#x2003;(1)

Polyalkylene oxide porogens having hyper-branches and low dielectric-constant insulators using them

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Seoul, South Korea

Kookheon Char