Samsung Electronics Co., Ltd.

Kook Tae Kim

Soojin Hong

Miseon Park

Jaewoong Lee

Jingyun Kim

Jaesung Hur

Hyungi Hong

Jonghyeon Noh

Ju-eun Kim

Jin Gyun Kim

Bongjin Kuh

Dongmo Im

Ju-Eun Kim

Sukjin Chung

Kyunghee Kim

Ha Jin Lim

In-Sun Yi

Taek Soo Jeon

Jae Sung Hur

Chang Kyu Lee

Soo Jin Hong

Young Bin Lee

Jungim Choe

An image sensor includes a semiconductor substrate having a first surface and a second surface opposite to the first surface, a first pixel isolation structure disposed in a first trench which vertically extends from the first surface of the semiconductor substrate and defines a plurality of pixel regions, and a second pixel isolation structure disposed in a second trench vertically extending from the second surface of the semiconductor substrate. The second pixel isolation structure overlaps the first pixel isolation structure. The first pixel isolation structure includes a liner semiconductor pattern defining a gap region in the first trench, the liner semiconductor pattern including sidewall portions and a bottom portion connecting the sidewall portions, a liner insulating pattern disposed between the liner semiconductor pattern and the semiconductor substrate, and a capping insulating pattern disposed in the gap region of the liner semiconductor pattern.

Image sensor

An image sensor includes: a substrate including a first surface and a second surface; an interlayer dielectric layer covering the first surface; and a pixel separation part disposed its the substrate, wherein the pixel separation part divides a plurality of unit pixels from each other, wherein the pixel separation part includes: a conductive structure that extends from the first surface toward the second surface; a first reflective structure disposed between the conductive structure and the substrate; and a front-side buried pattern disposed between the conductive structure and the interlayer dielectric layer and between the first reflective structure and the interlayer dielectric layer, wherein the first reflective structure includes first reflective liners and second reflective liners that are alternately disposed in a direction toward the conductive structure from the substrate, wherein a refractive index of the first reflective liners is different from a refractive index of the second reflective liners.

Image sensor including reflective structure including a reflective structure

An image sensor is provided and may include a semiconductor substrate having a surface and including trench, the trench extending from the surface into the semiconductor substrate, an insulating pattern provided in the trench; and a doped region in the semiconductor substrate and on the insulating patterns. The doped region includes a side portion on a side surface of the insulating pattern, and a bottom portion on a bottom surface of the insulating pattern. A thickness of the side portion of the doped region is from 85% to 115% of a thickness of the bottom portion of the doped region, and a number of dopants per unit area in the side portion of the doped region is from 85% to 115% of a number of dopants per unit area in the bottom portion.

An image sensor includes a substrate including a first surface, a second surface opposite to the first surface, and unit pixels, a deep device isolation portion disposed in the substrate to isolate the unit pixels from each other, and a transfer gate disposed on the first surface and in each of the unit pixels. The deep device isolation portion includes a first conductive pattern extending from the first surface toward the second surface, a first insulating pattern interposed between the first conductive pattern and the substrate, a second conductive pattern extending from the second surface toward the first conductive pattern, and a first fixed charge layer interposed between the second conductive pattern and the substrate.

Image sensor and method of manufacturing the same

An image sensor including a substrate having first and second surfaces that are opposite to each other. The substrate includes unit pixel regions having photoelectric conversion regions. A semiconductor pattern is disposed in a first trench defined in the substrate and defines the unit pixel regions. The semiconductor pattern includes a first semiconductor pattern and a second semiconductor pattern disposed on the first semiconductor pattern. A back-side insulating layer covers the second surface of the substrate. The first semiconductor pattern includes a side portion extended along an inner side surface of the first trench and a bottom portion connected to the side portion and disposed closer to the second surface of the substrate than the side portion. The second semiconductor pattern extends toward the second surface of the substrate and is spaced apart from the back-side insulating layer with the bottom portion of the first semiconductor pattern interposed therebetween.

Image sensors are provided. An image sensor includes a substrate including a plurality of pixel areas. The substrate has a first surface and a second surface that is opposite the first surface. The image sensor includes a deep pixel isolation region extending from the second surface of the substrate toward the first surface of the substrate and separating the plurality of pixel areas from each other. The image sensor includes an amorphous region adjacent a sidewall of the deep pixel isolation region. Moreover, the image sensor includes an electron suppression region between the amorphous region and the sidewall of the deep pixel isolation region.

Image sensors including an amorphous region and an electron suppression region

Image sensor including a semiconductor pattern

An image sensor may include a substrate including first and second surfaces opposite each other, a plurality of photoelectric conversion devices isolated from direct contact with each other within the substrate, a first trench configured to extend into an interior of the substrate from the first surface of the substrate and between adjacent photoelectric conversion devices of the plurality of photoelectric conversion devices, a first supporter within the first trench, and a first isolation layer at least partially covering both sidewalls of the first supporter within the first trench, wherein a lower surface of the first supporter is coplanar with the first surface of the substrate.

Image sensors including photoelectric conversion devices, trench, supporter, and isolation layer

An image includes a semiconductor substrate having a first surface and a second surface that face each other; a first photoelectric conversion region and a second photoelectric conversion region provided in the semiconductor substrate; a gapfill pattern that is interposed between the first and second photoelectric conversion regions and extends from the second surface toward the first surface, wherein a first side surface of the gapfill pattern faces the first photoelectric conversion region and a second side surface of the gapfill pattern faces the second photoelectric conversion region; and a conductive pattern disposed on the gapfill pattern. The conductive pattern includes a first portion disposed on the first side surface, a second portion disposed on the second side surface, and a connecting portion that is disposed on a top surface of the gapfill pattern and electrically connects the first portion to the second portion.

Disclosed are a substrate processing apparatus and a method of cleaning the apparatus. The apparatus includes a process chamber, a support unit in the process chamber and configured to support a substrate, and a gas injection unit in the process chamber. The gas injection unit includes a first injection portion configured to inject a source gas, a second injection portion facing the first injection portion and configured to inject a reaction gas that reacts with the source gas, and a third injection portion configured to inject a cleaning gas that removes a reactant produced from the source gas and the reaction gas.

Growing community of inventors

Hwaseong-si, South Korea

Kook Tae Kim