Samsung Electronics Co., Ltd.

Kook-tae Kim

Soo-jin Hong

Ho-Sung Son

Jin-gyun Kim

Dong-Suk Shin

Seok-Jun Won

Ji-Hye Yi

Hyun-Jun Sim

Young-Tak Kim

Chul-Woong Lee

Sung-Uk Jang

Ju-Ri Lee

Ha-Jin Lim

Jae-Sung Hur

Jong-Min Jeon

Hye-Ri Hong

An image sensor including a semiconductor substrate having a first surface and a second surface; and a pixel isolation film extending from the first surface of the semiconductor substrate into the semiconductor substrate and defining active pixels in the semiconductor substrate, wherein the pixel isolation film includes a buried conductive layer including polysilicon containing a fining element at a first concentration; and an insulating liner between the buried conductive layer and the semiconductor substrate, and wherein the fining element includes oxygen, carbon, or fluorine.

Image sensor

An image sensor includes a photoelectric converter in a pixel area of a substrate to generate photoelectrons in response to an incident light that is incident onto the pixel area, a signal generator on a first surface of the substrate in the pixel area to generate electric signals corresponding to image information of an object in accordance with the photoelectrons, and a pixel separation pattern penetrating through the substrate from the first surface of the substrate to a second surface of the substrate opposite to the first surface of the substrate, the pixel separation pattern including an insulation pattern having a refractive index smaller than that of the substrate and a metallic conductive pattern enclosed by the insulation pattern, and the pixel area being enclosed by the pixel separation pattern and isolated from a neighboring pixel area.

Image sensor with separation pattern and image sensor module including the same

A dummy gate electrode layer and a dummy gate mask layer may be formed on a substrate. The dummy gate mask layer may be patterned to form a dummy gate mask so that a portion of the dummy gate electrode layer is exposed. Ions may be implanted into the exposed portion of the dummy gate electrode layer and a portion of the dummy gate electrode layer adjacent thereto by an angled ion implantation to form a growth blocking layer in the dummy gate electrode layer. The dummy gate electrode layer may be etched using the dummy gate mask as an etching mask to form a dummy gate electrode. A spacer may be formed on side surfaces of a dummy gate structure including the dummy gate electrode and the dummy gate mask. An SEG process may be performed to form an epitaxial layer.

Semiconductor devices and methods of manufacturing the same

Semiconductor device, method for fabricating the same and electronic devices including the semiconductor device are provided. The semiconductor device comprises an interlayer insulating layer formed on a substrate and including a trench, a gate electrode formed in the trench, a first gate spacer formed on a side wall of the gate electrode to have an L shape, a second gate spacer formed on the first gate spacer to have an L shape and having a dielectric constant lower than that of silicon nitride, and a third spacer formed on the second gate spacer.

Semiconductor device, method for fabricating the same, and memory system including the semiconductor device

Growing community of inventors

Hwaseong-si, South Korea

Kook-tae Kim