Samsung Electronics Co., Ltd.

Cheil Industries Inc.

Kook-Joo Kim

Seung-Ki Chae

Pil-Kwon Jun

Jin-Ho Kim

Sun-Hee Park

Yang-Koo Lee

Dong-Won Hwang

Jung-In La

Gyoung-Eun Byun

In a method of forming a conductive pattern structure of a semiconductor device, a first insulating interlayer is formed on a substrate. A first wiring is formed to pass through the first insulating interlayer. An etch stop layer and a second insulating interlayer are sequentially formed on the first insulating interlayer. A second wiring is formed to pass through the second insulating interlayer and the etch stop layer. A dummy pattern is formed to pass through the second insulating layer and the etch stop layer at the same time as forming the second wiring. The second wiring is electrically connected to the first wiring. The dummy pattern is electrically isolated from the second wiring.

Semiconductor devices and methods of manufacturing the same

In a composition for etching silicon oxide, and a method of forming a contact hole using the composition, the composition which includes from about 0.01 to about 2 percent by weight of ammonium bifluoride, from about 2 to about 35 percent by weight of an organic acid, from about 0.05 to about 1 percent by weight of an inorganic acid, and a remainder of a low polar organic solvent. The composition may reduce damages to a metal silicide pattern that may be exposed in an etching process performed for forming the contact hole.

Composition for etching silicon oxide and method of forming a contact hole using the same

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Seongnam-si, South Korea

Kook-Joo Kim