Wisconsin Alumni Research Foundation

Konstantinos C Daoulas

Paul Franklin Nealey

Juan Jose De Pablo

Mark Stoykovich

Marcus Muller

SangMin Park

Huiman Kang

Methods of fabricating complex three-dimensional structures on patterned substrates and related compositions are provided. The methods involve depositing on the substrate a block copolymer material that is 'mismatched' to the substrate pattern, and then ordering the material to form a complex three-dimensional structure. According to various embodiments, the copolymer material mismatches the substrate pattern in that the symmetry and/or length scale of its bulk morphology differs from that of the pattern. When ordered, a balance between the physics that determines the bulk block copolymer morphology and the physics that determines the substrate surface interfacial interactions results in a thermodynamically stable complex three-dimensional film that varies in a direction perpendicular to the substrate and has a morphology that differs from its bulk morphology.

Fabrication of complex three-dimensional structures based on directed assembly of self-assembling materials on activated two-dimensional templates

Methods of directing the self assembly of block copolymers on chemically patterned surfaces to pattern discrete or isolated features needed for applications including patterning integrated circuit layouts are described. According to various embodiments, these features include lines, t-junctions, bends, spots and jogs. In certain embodiments a uniform field surrounds the discrete feature or features. In certain embodiments, a layer contains two or more distinct regions, the regions differing in one or more of type of feature, size, and/or pitch. An example is an isolated spot at one area of the substrate, and a t-junction at another area of the substrate. These features or regions of features may be separated by unpatterned or uniform fields, or may be adjacent to one another. Applications include masks for nanoscale pattern transfer as well as the fabrication of integrated circuit device structures.

Methods and compositions for forming patterns with isolated or discrete features using block copolymer materials

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Goettingen, Germany

Konstantinos C Daoulas