Other

The University of Manchester

Nanoco Technologies Limited

Konstantin Novoselov

Andre Konstantin Geim

Chung Ping Lai

Roman Gorbachev

Leonid Ponomarenko

Jia-Cing Chen

Frederick Withers

Kuo-Hsin Chang

Liam Britnell

The advent of graphene and related 2D materials has recently led to a new technology: heterostructures based on these atomically thin crystals. The paradigm proved itself extremely versatile and led to rapid demonstration of tunnelling diodes with negative differential resistance, tunnelling transistors, photovoltaic devices and so on. In the present invention, the complexity and functionality of such van der Waals heterostructures is taken to the next level by introducing quantum wells (QWs) engineered with one atomic plane precision. We describe light-emitting diodes (LEDs) made by stacking metallic graphene, insulating hexagonal boron nitride and various semiconducting monolayers into complex but carefully designed sequences.

Heterostructures and electronic devices derived therefrom

A printed radio frequency sensor structure contains: a substrate, a RF antenna arranged on a top surface of the substrate, and a protection layer covering on the RF antenna arranged, wherein plural sensing materials are directly introduced into a RF antenna mixture of the RF antenna. A method of preparing a RFID sensor tag comprising steps of: A). Printing conductive sensing ink/glue on substrate; B. Drying, curing and compressing the conductive sensing ink/glue to form a conductive antenna mixture with plural sensing materials; C). Bonding a chip on a RFID sensing antenna to form a RFID sensor tag; and D). Coating a protection layer on a top of the RFID sensor tag. Here note protection coating can fully, partially or no cover the conductive sensing antenna.

Printed radio frequency sensor structure and a method of preparing a RFID sensor tag

This application relates to graphene based heterostructures and transistor devices comprising graphene. The hetero-structures comprise i) a first graphene layer; ii) a spacer layer and iii) a third graphene. The transistors comprise (i) an electrode, the electrode comprising a graphene layer, and (ii) an insulating barrier layer.

Transistor device and materials for making

Growing community of inventors

Manchester, United Kingdom

Konstantin Novoselov