Asml Netherlands B.v.

Konstantin Nikolaevitch Koshelev

Vadim Yevgenyevich Banine

Givi Georgievitch Zukavishvili

Vladimir Vital'Evitch Ivanov

Robert Rafilevitch Gayazov

Frederik Bijkerk

Bastiaan Matthias Mertens

Evgenii Dmitreevitch Korob

Evgenii Dmitreevitch Korop

Martinus Hendrikus Antonius Leenders

Maarten Marinus Johannes Wilhelmus Van Herpen

Derk Jan Wilfred Klunder

Erik Roelof Loopstra

Arno Jan Bleeker

Vladimir Vitalevitch Ivanov

Vladimir Mihailovitch Krivtsun

Levinus Pieter Bakker

Norbertus Benedictus Koster

Johannes Hubertus Josephina Moors

Theodorus Petrus Maria Cadee

Frank Jeroen Pieter Schuurmans

Wouter Anthon Soer

Lucas Henricus Johannes Stevens

Olav Waldemar Vladimir Frijns

Bastiaan Theodoor Wolschrijn

Vladimir Vitalevich Ivanov

Arnoud Cornelis Wassink

Johannes Christiaan Leonardus Franken

Alexander Matthijs Struycken

Denis Alexandrovich Glushkov

Pavel Stanislavovich Antsiferov

Erik René Kieft

Yurii Victorovitch Sidelnikov

Paul Peter Anna Antonius Brom

Marc Hubertus Lorenz Van Der Velden

Evgeny Dmitrievich Korop

Oleg Yakushev

Andrzej Bartnik

Henryk Fiedorowicz

Dmitriy Victorovich Lopaev

Tatyana Victorovna Rakhimova

Cornelis C De Bruijn

Aleksander Sergeevich Kovalev

Vladimir Vital′evitch Ivanov

Evgenil Dmitreevitch Korob

Vladimir Mihailovitch Krivtsum

Vsevolod Grigorevitch Koloshnikov

Yurii Victorovitch Sidelkov

Johannes Hubertus Johannes Moors

Vladimir Mihailovitc Krivtsun

Sergey Churilov

Vladimir Vital'evitch Ivanov

A patterned beam of radiation is projected onto a substrate. A reflective optical element is used to help form the radiation beam from radiation emitted from a plasma region of a plasma source. In the plasma source, a plasma current is generated in the plasma region. To reduce damage to the reflective optical element, a magnetic field is applied in the plasma region with at least a component directed along a direction of the plasma current. This axial magnetic field helps limit the collapse of the Z-pinch region of the plasma. By limiting the collapse, the number of fast ions emitted may be reduced.

Plasma radiation source, method of forming plasma radiation, apparatus for projecting a pattern from a patterning device onto a substrate and device manufacturing method

A method for cleaning elements of a lithographic apparatus, for example optical elements such as a collector mirror, includes providing a gas containing nitrogen; generating nitrogen radicals from at least part of the gas, thereby forming a radical containing gas; and providing at least part of the radical containing gas to the one or more elements of the apparatus. A lithographic apparatus includes a source and an optical element, and an electrical discharge generator arranged to generate a radio frequency discharge.

Lithographic apparatus comprising an electrical discharge generator and method for cleaning an element of a lithographic apparatus

A foil trap is located in a path of a radiation beam. The foil trap includes an array of conductive strips. A voltage application circuit is coupled to the strips to apply voltage differences between pairs of adjacent ones of the strips. The voltage application circuit includes a current limiting circuit arranged to limit currents to the strips to values below a threshold value above which self-sustained arc discharge may arise in the foil trap.

Lithographic apparatus, radiation system and device manufacturing method

A radiation source includes an anode and a cathode for creating a discharge in a vapor in a space between anode and cathode and to form a plasma of a working vapor so as to generate electromagnetic radiation. The cathode defines a hollow cavity in communication with the discharge region through an aperture that has a substantially annular configuration around a central axis of said radiation source so as to initiate said discharge. A driver vapor is supplied to the cathode cavity and the working vapor is supplied in a region around the central axis in between anode and cathode.

Radiation source, lithographic apparatus, device manufacturing method, and device manufactured thereby

A radiation system for generating a beam of radiation that defines an optical axis is provided. The radiation system includes a plasma produced discharge source for generating EUV radiation. The discharge source includes a pair of electrodes constructed and arranged to be provided with a voltage difference, and a system for producing a plasma between the pair of electrodes so as to provide a discharge in the plasma between the electrodes. The radiation system also includes a debris catching shield for catching debris from the electrodes. The debris catching shield is constructed and arranged to shield the electrodes from a line of sight provided in a predetermined spherical angle relative the optical axis, and to provide an aperture to a central area between the electrodes in the line of sight.

Radiation system and lithographic apparatus

The invention relates to a radiation system for generating electromagnetic radiation. The radiation system includes a pair of electrodes constructed and arranged to generate plasma of a first substance and a pinch in the plasma. The radiation system also includes a plasma recombination surface that is arranged proximate to the pinch, and is configured to neutralize a plurality of plasma particles.

A radiation source comprises an anode and a cathode that are configured and arranged to create a discharge in a gas or vapor in a space between anode and cathode and to form a plasma pinch so as to generate electromagnetic radiation. The gas or vapor may comprise xenon, indium, lithium and/or tin. The radiation source may comprise a plurality of discharge elements, each of which is only used for short intervals, after which another discharge element is selected. The radiation source may also comprise a triggering device, which device can facilitate improving the exact timing of the pinch formation and thus the pulse of EUV radiation. The radiation source may also be constructed to have a low inductance, and operated in a self-triggering regime.

Radiation source, lithographic apparatus and device manufacturing method

A radiation source is disclosed that includes an anode and a cathode that are configured and arranged to create a discharge in a substance in a discharge space between the anode and the cathode and to form a plasma so as to generate electromagnetic radiation, the anode and the cathode being rotatably mounted around an axis of rotation, the cathode being arranged to hold a liquid metal. The radiation source further includes an activation source arranged to direct an energy beam onto the liquid metal so as to vaporize part of the liquid metal and a liquid metal provider arranged to supply additional liquid metal so as to compensate for the vaporized part of the liquid metal.

Plasma radiation source for a lithographic apparatus

A device for generating radiation source based on a discharge includes a cathode and an anode. A discharge is created in a material comprising an alloy of two or more substances.

Electromagnetic radiation source, lithographic apparatus, device manufacturing method and device manufactured thereby

A device for generating radiation or a source based on a discharge includes a cathode and an anode. The cathode and anode material are supplied in fluid state. The material forms a plasma pinch when the device is in use. Optionally, nozzles may be used to supply the material. The cathode and/or anode may form a flat surface. The trajectories of the material may be elongated. A laser may be used to cause the discharge more easily. The laser may be directed on the anode of cathode or on a separate material located in between the anode and cathode.

Radiation generating device, lithographic apparatus, device manufacturing method and device manufactured thereby

A lithographic apparatus is arranged to project a beam from a radiation source onto a substrate. The apparatus includes an optical element in a path of the beam, a gas inlet for introducing a gas into the path of the beam so that the gas will be ionized by the beam to create electric fields toward the optical element, and a gas source coupled to the gas inlet for supplying the gas. The gas has a threshold of kinetic energy for sputtering the optical element that is greater than the kinetic energy developed by ions of the gas in the electric fields.

Lithographic apparatus and device manufacturing method

A device for generating radiation source based on a discharge includes a cathode and an anode. The cathode and anode material are supplied in fluid state. The material forms a plasma pinch when the device is in use. Optionally, nozzles may be used to supply the material. The cathode and/or anode may form a flat surface. The trajectories of the material may be elongated. A laser may be used to cause the discharge more easily. The laser may be directed on the anode of cathode or on a separate material located in between the anode and cathode.

A lithographic projection apparatus is provided. The apparatus includes a radiation system for providing a beam of radiation, and a support for supporting a patterning device. The patterning device serves to pattern the beam of radiation according to a desired pattern. The apparatus also includes a substrate table for holding a substrate, a projection system for projecting the patterned beam of radiation onto a target portion of the substrate, and a particle supply unit for supplying getter particles into the beam of radiation in order to act as a getter for contamination particles in the beam of radiation. The getter particles have a diameter of at least about 1 nm.

Lithographic apparatus with contamination suppression, device manufacturing method, and device manufactured thereby

A radiation source unit is provided that includes an anode and a cathode that are configured and arranged to create a discharge in a substance in a space between said anode and cathode and to form a plasma so as to generate electromagnetic radiation. The substance may comprise xenon, indium, lithium, tin or any suitable material. To improve conversion efficiency, the source unit may be constructed to have a low inductance, and operated with a minimum of plasma. To, for example, improve heat dissipation, a fluid circulation system can be created within the source volume and a wick by using a fluid in both its vapor and liquid states. To, for example, prevent contamination from entering a lithographic projection apparatus, the source unit can be constructed to minimize the production of contamination, and a trap can be employed to capture the contamination without interfering with the emitted radiation.

Radiation source, lithographic apparatus, and device manufacturing method

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Troitsk, Russia

Konstantin Nikolaevitch Koshelev