Lucent Technologies Inc.

Agere Systems Inc.

Agere Systems Guardian Corp.

Konstantin K Bourdelle

Pradip Kumar Roy

Yuanning Chen

David James Eaglesham

A semiconductor device having improved dielectric properties and a method for fabricating a semiconductor device. A semiconductor device includes a semiconductor layer suitable for device formation. A dielectric layer formed over the semiconductor layer has first and second opposing surfaces, a first surface region along the first surface and a second surface region along the second surface. A mid region is positioned between the first and second surface regions. The material of the dielectric layer includes a species having a concentration greater in the mid region than along the first opposing surface. The dielectric layer may be incorporated in a field effect transistor or a capacitor. According to a disclosed method an insulative layer is formed with two or more elements chemically bonded to one another. An additional species is introduced into the insulative layer in sufficient quantity to modify the net dielectric constant of the layer.

Electronic circuit structure with improved dielectric properties

A method for making a photoresist layer includes forming a photoresist layer adjacent a substrate and patterning the photoresist layer. The photoresist layer may include at least one of a solvent and water. The photoresist layer may then be heated and exposed to ultraviolet light during the heating to reduce at least one of the solvent and water therein. As a result, the formation of gases in the photoresist layer during ion implantation is reduced, which thus reduces damage to the photoresist layer from blistering, peeling, lifting, or reticulation, for example. The photoresist layer may be formed to have a thickness greater than about 2 &mgr;m, for example, to block high-current, high-dosage, high-energy ion implantation. Exposing may include exposing the photoresist layer to ultraviolet light having a power density in a range of about 200 to 500 mW/cm,, and, more preferably, about 270 to 360 mW/cm,, and having a wavelength in a range of about 200 to 300 nm, for example. The photoresist layer may be heated for about 200 to 400 seconds and to a temperature in a range of about 150&deg; C. to 250&deg; C., and more preferably about 230&deg; C. to 250&deg; C. Furthermore, heating may include maintaining the photoresist layer at a high temperature for about 15 to 60 seconds.

Method for making a photoresist layer having increased resistance to blistering, peeling, lifting, or reticulation

A process for semiconductor device fabrication in which a Czochralski silicon substrate is implanted with boron is disclosed. The boron is implanted using an energy of about 500 keV to about 3 MeV and a dose of about 3.times.10.sup.13 /cm.sup.2 to about 3.times.10.sup.14 /cm.sup.2. In order to reduce the threading dislocation density in the substrate to less than about 10.sup.3 /cm.sup.2 at a depth in the substrate of at least about 0.5 .mu.m, after the implant, the substrate is annealed in a two-step process. First the substrate is annealed at a temperature in the range of about 725.degree. C. to about 775.degree. C. followed by an anneal at a temperature of at least about 900.degree. C. The duration of the first step is selected to provide a dislocation density of less than about 10.sup.3 /cm.sup.2 at the desired depth in the substrate.

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Orlando, FL, United States of America

Konstantin K Bourdelle