Osram Oled Gmbh

Osram Opto Semiconductors Gmbh

Konrad Wagner

Michael Förster

Daniel Richter

Gunnar Petersen

Jörg Erich Sorg

Klaus Reingruber

Stefan Morgott

Peter Nagel

Jürgen Holz

I-Hsin Lin-Lefebvre

Nicole Berner

Michael Rasp

Ralf Müller

Josef Hirn

Daniel Wiener

Michael Foerster

Simone Brantl

Benjamin Schulz

A carrier comprises: a main body made of a material comprising a thermal conductivity of at least 380 W/(m K), wherein the main body comprises a mounting surface for mechanical and thermal connection with a component, wherein the main body comprises a recess which penetrates the main body along a first direction perpendicular to the main extension plane of the main body, an electrically insulating filler is arranged in the recess, which comprises a further recess penetrating the filler along the first direction, an inner wall of the filler surrounding the further recess is provided with an electrically conductive coating to form a via through the main body.

Carrier, assembly with a carrier, and method for producing a carrier

An optoelectronic component () is specified, with at least one radiation-emitting semiconductor chip generating electromagnetic radiation during operation, a coating surrounding the at least one semiconductor chip in lateral directions, a magnetic structure covered by the coating, wherein the magnetic structure enables the component to be identified. Furthermore, a process for the manufacture of such an optoelectronic component is given.

Optoelectronic component with a magnetic structure and method for producing same

Carrier with an electrically insulating base material, electrically conductive through-connections and a thermal connection element. The through-connections and the thermal connection element are each completely surrounded by the base material in the lateral direction, the thermal connection element and the through-connections completely penetrating the base material perpendicularly to the main extension plane of the carrier, and the thermal connection element being formed with a material which has a thermal conductivity of at least 200 W/(m K).

Carrier, assembly comprising a substrate and a carrier, and method for producing a carrier

In one embodiment, the optoelectronic semiconductor component comprises at least one semiconductor chip for generating a primary radiation, and also an optical body disposed optically downstream of the semiconductor chip. A reflector surrounds the optical body laterally all around in a positively locking manner and is configured for reflecting the primary radiation and visible light. The optical body has a base surface facing the semiconductor chip and an exit surface facing away from the semiconductor chip. The optical body tapers in a direction away from the semiconductor chip. A quotient of the base surface and a height of the optical body is between 1 mm and 30 mm inclusive.

Optoelectronic semiconductor component

A method of selecting semiconductor chips includes: A) providing the semiconductor chips in a composite, B) producing a cohesive, mechanical first connection between the semiconductor chips and a carrier film, C) singulating the semiconductor chips, wherein the carrier film mechanically connects the semiconductor chips to one another after singulation, D) selectively weakening the first connection between some singulated semiconductor chips and the carrier film, depending on electro-optical and/or electrical properties of the semiconductor chips, and E) removing the semiconductor chips whose first connection is selectively weakened from the carrier film.

Method of selecting semiconductor chips

An optoelectronic component includes a carrier, an optoelectronic arrangement, and a potting material, wherein the optoelectronic arrangement includes an optoelectronic semiconductor chip, the optoelectronic arrangement is arranged above a top side of the carrier, the potting material is arranged above the top side of the carrier such that the optoelectronic arrangement is embedded into the potting material, a radiation emission face of the optoelectronic arrangement is not covered by the potting material, and a surface of the potting material is formed above the radiation emission face in relation to the top side of the carrier.

Optoelectronic component and method of producing an optoelectronic component

An optoelectronic arrangement includes a first circuit board, a second circuit board, and an optoelectronic semiconductor chip arranged on the first circuit board, wherein a first electrical contact surface and a second electrical contact surface are formed on a surface of the first circuit board, a first mating contact surface and a second mating contact surface are formed on a surface of the second circuit board, and the first circuit board and the second circuit board connect to one another such that the surface of the first circuit board faces toward the surface of the second circuit board, and the first mating contact surface electrically conductively connects to the first contact surface and the second mating contact surface electrically conductively connects to the second contact surface.

Optoelectronic arrangement

A connection board includes at least one cut-out to fasten the connection board to an installation board and multiple contact surfaces electrically isolated from one another, wherein the contact surfaces electrically connect to one another when the connection board is in a fastened state by a fastener that extends through the cut-out.

Connection board, optoelectronic component arrangement and illumination device

A radiation-emitting component is disclosed. In embodiments a component includes a radiation-emitting semiconductor chip having a radiation exit area including a side face and a main face, a conversion element having a radiation exit area including a side face and a main face, and a first reflection element disposed downstream of the conversion element and the radiation-emitting semiconductor chip, wherein a ratio of a sum of the radiation exit areas of the radiation-emitting semiconductor chip to a sum of the radiation exit areas of the conversion element is greater than 1, wherein the conversion element adjoins the radiation-emitting semiconductor chip, wherein the radiation-emitting semiconductor chip is configured to generate primary radiation, wherein the conversion element is configured to convert the primary radiation into secondary radiation, and wherein the primary radiation and the secondary radiation leave the radiation-emitting component exclusively through the first reflection element.

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Wuppertal, Germany

Konrad Wagner