Siemens Aktiengesellschaft

Konrad Schober

Konrad Hieber

Franz Neppl

A sensor for measuring elecrical properties of a coating on a reference substrate including a substrate holder for supporting the reference substrate, at least two electrical interconnects on the reference substrate, carrier laminae supported on the reference substrate, measuring laminae supported on the reference substrate for contact with the interconnects, the measuring laminae being isolated from each other, and contact elements extending from the substrate holder and engaging the measuring laminae.

Sensor for measuring the current or voltage of electrically conductive

An integrated semiconductor circuit consisting of a silicon substrate having an impurity doped circuit therein, and a layer of silicon dioxide formed on the substrate and having a contact hole therein overlying the circuit. An outer contact interconnect level composed of aluminum or an aluminum alloy provides electrical contact to the circuit. A tantalum disilicide diffusion barrier layer is disposed between the circuit and the interconnect level, with a layer of substantially pure tantalum both above and below the tantalum disilicide diffusion barrier layer.

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Munich, Germany

Konrad Schober