Winbond Electronics Corporation

Windbond Electronics Corp.

Konrad Kwang-Leei Young

Ta-Lee Yu

Chau-Neng Wu

Ling-Yen Yeh

Frank S-t Lin

An electrostatic discharge protection circuit formed in a semiconductor substrate includes a vertical bipolar junction transistor having a base which is grounded, an emitter connected to an output/input bonding pad of an integrated circuit, and a collector connected to a high power source via a resistor. The resistor is a parasitic resistor created by controlling the distance between the diffusion regions or the distance between a p-type well region and an n-type well region or formed by a lightly doped diffusion region in the semiconductor substrate to prevent current crowding and increase electrostatic protection.

Electrostatic discharge protection circuit

A multi-finger MOS transistor element is provided in which all of the base resistance values of parasitic bipolar transistors (NPN, if an NMOS, or PNP, if a PMOS transistor) in each finger MOS are equal to each other. Thus, each finger MOS transistor element in the multi-finger MOS transistor is turned on simultaneously to enhance ESD protection performance. In the multi-finger MOS transistor, the diffusion region for providing the well/substrate contact is distributed in the source region to make the base resistance value of the parasitic NPN (or PNP) transistor in each finger MOS equal to each other. The multi-finger MOS of the invention includes a plurality of drain regions, each having drain contacts, a plurality of source regions, each having source contacts, and a plurality of gate regions, wherein each gate region is between each drain region and the source region; a bias diffusion region formed in the source region along a middle line which is equally spaced between the pair of gate regions.

Multi-finger MOS transistor element

An SCR circuit formed on a semiconductor substrate includes a well region, a first diffusion region and a second diffusion region in the well region, and a third diffusion region in the substrate. The SCR circuit also includes a capacitor connected between the first diffusion region and the third diffusion region. The junction region between the well region and the diffusion region is forward biased when an electrostatic force is applied to the SCR circuit, thereby triggering the SCR circuit to discharge the electrostatic force.

Growing community of inventors

Taipei, Taiwan

Konrad Kwang-Leei Young