USA As Represented by Secretary of the Navy

Konrad Bussmann

Gary A Prinz

Jeffrey W Baldwin

Peter Finkel

Bernard R Matis

Ronald Lacomb

Margo Staruch

Steven P Bennett

Shu-Fan Cheng

Peter Lubitz

Julie Lacomb

William Zappone

Meredith Metzler

Norman Gottron

Albert H Davis

A high-sensitivity and ultra-low power consumption magnetic sensor using a magnetoelectric (ME) composite comprising of magnetostrictive and piezoelectric layers. This sensor exploits the magnetically driven resonance shift of a free-standing magnetoelectric micro-beam resonator. Also disclosed is the related method for making the magnetic sensor.

Ultra-low power magnetoelectric magnetic field sensor

This invention pertains to a spintronic device for emitting light and to a method for its operation. The device includes a cathode electrode capable of producing spin-polarized charge carrier electrons under the influence of an electric field; an anode electrode spaced from the cathode for producing spin-polarized charge carrier holes; an intermediate medium disposed between the electrodes into which the carriers are injected under the influence of an electric field and which serves as a transport medium for the carriers wherein the carriers are transported and within which the carriers react and form excitons; and a circuit between the electrodes for imparting en electric field which serves as the motive force for the carriers. The method includes the steps of producing spin-polarized electrons, producing spin-polarized holes, passing the electrons and the holes through a transport medium under influence of an electric field whereby the electrons and the holes, being oppositely charged, combine to produce excitons which produce light, and collecting the light so produced.

Magnetic organic light emitting device and method for modulating electroluminescence intensity

A wafer suitable to be tested for current-perpendicular to the plane resistance includes a substrate, a conductive base layer on the substrate, a magnetic multilayer on the conductive base layer, and a top conductive layer. A testing ring is formed on the magnetic multilayer in a manner whereby it is separated from rest of the magnetic multilayer by a trench in the magnetic multilayer. Within the testing ring, the magnetic multilayer includes a hole. The current perpendicular to the plane resistance of the wafer may be determined by passing a predetermined current perpendicular through the testing ring by contacting a probe to the testing ring and measuring the voltage at the conductive base layer. The probe used in the present invention may be an AFM or a STM probe.

Testing current perpendicular to plane giant magnetoresistance multilayer devices

A GMR stack has at least two ferromagnetic layers (e.g.,CoFe) spaced from each other by a nonferromagnetic layer (e.g., Cu). A layer of a phase-breaking material (such as Ta or a Ta-base alloy) between the nonferromagnetic layer and at least one of the two ferromagnetic layers prevents the undesirable growth of large-grained structures in the ferromagnetic layers.

Structures with improved magnetic characteristics for giant magneto-resistance applications

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Springfield, VA, United States of America

Konrad Bussmann