Shibaura Mechatronics Corporation

Konosuke Hayashi

Takashi Ootagaki

Yuji Nagashima

Kunihiro Miyazaki

Masahiro Abe

Masaaki Furuya

Atsushi Kinase

Emi Matsui

Jun Matsushita

Osamu Yamazaki

Yuki Saito

Takashi Miyamoto

Daisuke Matsushima

Akinori Iso

Takahiro Kanai

Kenji Minami

Yosuke Himori

According to one embodiment, a processing liquid generator capable of improving the reliability of the concentration of generated processing liquid is provided. A processing liquid generator that generates processing liquid having undergone concentration adjustment includes a processing liquid adjuster (), which adjusts the concentration of the processing liquid, a first processing liquid path P, through which the processing liquid flows to the processing liquid adjuster (), a second processing liquid path P, through which the processing liquid flows to the processing liquid adjuster, a first concentration meter, which measures the concentration of the processing liquid flowing through the first processing liquid path P, the measured concentration being the concentration of a component involved in the concentration adjustment in the processing liquid adjuster (), a second concentration meter, which measures the concentration of the processing liquid flowing through the second processing liquid path P, the measured concentration being the concentration of a component that is involved in the concentration adjustment and should be measured with the first concentration meterin terms of concentration, a first valve mechanism, which opens and closes the first processing liquid path P, and a second valve mechanism, which opens and closes the second processing liquid path P

Processing liquid generator and substrate processing apparatus using the same

According to one embodiment, a substrate processing apparatus includes: a removing part (D) configured to remove liquid droplets present in a recess (); a drain hole () located at the bottom of the recess () of a nozzle head (), and configured to discharge the liquid droplets as a target to be removed out of the recess (); and a controller configured to control the discharge state of a gas discharge nozzle () such that there is a period in which a gas is discharged from the gas discharge nozzle () at a flow rate, at which the gas discharged does not reach a surface to be processed of s substrate W, in a period from the end of the rinsing process using a treatment liquid to the start of the drying process using the gas.

Substrate processing apparatus

A suction stage may include a mounting section configured to mount a first substrate, and an evacuation section configured to evacuate air between the first substrate and the mounting section. The mounting section includes a ring-shaped first wall part, and a ring-shaped second wall part inside the first wall part. The evacuation section includes a first control valve between the evacuation section and a first region between the first and second wall parts, a second control valve between the evacuation section and a second region inside the second wall part, and a control section configured to control the valves. The control section is configured to control the valves so that suction and non-suction of the first substrate are alternately performed in at least one of the regions. Thus, suction of the first substrate may be deactivated in one of the regions, while the suction is active in the other region.

Suction stage, lamination device, and method for manufacturing laminated substrate

According to one embodiment, a substrate processing apparatus includes a processing chamber, a support part, a heater, and an optical member. In the processing chamber, air flows from the top to the bottom. The support part is located in the processing chamber to support a substrate having a surface to be treated. The heater is arranged so as not to be above the support part and emits light for heating. The optical member is arranged in the processing chamber so as not to be above the support part to guide the light emitted by the heater and having passed above the support part to the surface to be treated of the substrate supported by the support part.

A substrate processing devicehas a water removing unitand, when a solvent supply unitsupplies a volatile solvent to a surface of a substrate W, the water removing unitsupplies a water removing agent to the surface of the substrate W to promote replacement of the cleaning water on the surface of the substrate W with the volatile solvent.

Substrate processing device and substrate processing method

According to one embodiment, a substrate processing apparatus () includes: a support () configured to support a substrate (W) in a plane; a rotation mechanism () configured to rotate the support () about an axis that crosses a surface of the substrate (W) supported by the support () as a rotation axis; a plurality of nozzles (), which are aligned from the center toward the periphery of the substrate (W) supported by the support (), configured to eject a treatment liquid to the surface of the substrate (W) on the support () being rotated by the rotation mechanism (), and a controller () configured to control the nozzles to eject the treatment liquid at different ejection timings according to the thickness of a film of the treatment liquid formed on the surface of the substrate (W) on the support () being rotated by the rotation mechanism ().

Substrate processing apparatus and substrate processing method

According to one embodiment, a substrate processing apparatus () includes a table () configured to support a substrate W, a solvent supply unit () configured to supply a volatile solvent to a surface of the substrate W on the table (), and an irradiator () configured to emit light to the substrate W, which has been supplied with the volatile solvent, and function as a heater that heats the substrate W such that a gas layer is formed on the surface of the substrate W to make the volatile solvent into a liquid ball. Thus, it is possible to dry the substrate successfully as well as to suppress pattern collapse.

A substrate processing device includes a suction drying section drying a surface of a substrate by absorbing and removing a liquid droplet of volatile solvent formed on the surface of the substrate by a heating operation of a heating section.

According to the embodiment, a substrate treating devicefor treating a semiconductor wafer W using an etchant L containing hydrofluoric acid and nitric acid includes a storage tankthat stores the etchant L; a concentration sensorthat measures a concentration of nitrous acid in the etchant L; an alcohol feeding linethat feeds IPA to the etchant L and maintains the concentration of nitrous acid to a predetermined value or more; and a substrate treating unitthat feeds the etchant L in the storage tankto the semiconductor wafer W. The substrate treating device can improve the etching efficiency by efficiently generating nitrous acid, and thereby producing an etchant having a nitrous acid concentration suitable for etching.

Device and method for treating a substrate with hydrofluoric and nitric acid

The substrate processing unitcomprises the rotating tableconfigured to hold substrate W, the processing chamberwhich accommodates the rotating table, a lampis provided above the processing chamberand configured to heat the surface of substrate W, the lamp chamberwhich accommodates that lamp, a transmission windowdisposed below the lamp chamber, and a plurality of nozzlewhich supply cooling fluid G to the transmission window. Then the substrate processing unitcan suppress generating of a water mark or pattern collapse, and can perform good substrate processing.

According to one embodiment, a substrate processing apparatus includes a first liquid supplier, a second liquid supplier, and a controller. The first liquid supplier supplies a substrate with a sulfuric acid solution having a first temperature equal to or higher than the boiling point of hydrogen peroxide water. The second liquid supplier supplies a surface to be treated of the substrate with a mixture of sulfuric acid solution and hydrogen peroxide water having a second temperature lower than the first temperature. The controller controls the first liquid supplier to supply the sulfuric acid solution so as to heat the substrate to the boiling point of hydrogen peroxide water or higher. When the temperature of the substrate becomes equal to or higher than the second temperature, the controller controls the first liquid supplier to stop supplying the sulfuric acid solution and controls the second liquid supplier to supply the mixture.

A liquid feeding device that feeds a treatment liquid to a treating device and also recovers the treatment liquid for re-feeding, include feeding tanks having an exhaust passage and an overflow line, and can be switched to one of a feeding mode in which the treatment liquid is fed and a standby mode in which the feeding tank is on standby while accommodating the treatment liquid; a feeding mechanism that feeds the treatment liquid to the treating device from the feeding tank in the feeding mode among the plurality of feeding tanks; a recovery mechanism that recovers and returns the treatment liquid excessive in the treatment device to the feeding tank in the feeding mode; and an on-off mechanism provided in each of the plurality of feeding tanks to block the exhaust passage and the overflow line is provided.

Liquid feeding device and substrate treating device

A substrate processing apparatus according to an embodiment includes: a liquid supplier configured to supply a processing liquid to a surface of a substrate; a temperature detector configured to detect a surface temperature of the substrate supplied with the processing liquid by the liquid supplier; a temperature monitor configured to determine whether or not the surface temperature detected by the temperature detector has reached a predetermined temperature; and a controller configured to cause the liquid supplier to stop supplying the processing liquid when the temperature monitor determines that the surface temperature has reached the predetermined temperature.

According to one embodiment, a bonding apparatus for processing a retained substrate includes a main body unit, a nozzle, a gas supply unit, and a substrate support unit. The nozzle opens on a face of the main body unit on a side that a first substrate is retained. The gas supply unit is configured to supply gas to the nozzle, to apply suction to the first substrate and to separate the substrate from the face of the main body unit. The substrate support unit is configured to support a peripheral edge portion of a second substrate provided in opposition to the first substrate with a predetermined gap.

Bonding apparatus and bonding process method

A substrate treatment apparatus according to the embodiment includes: a nozzle which ejects a treatment liquid onto a treatment target surface of a substrate; a trajectory deflector including a trajectory deflecting surface, which is an annular inclined surface that deflects a traveling direction of the treatment liquid ejected from the nozzle and makes the treatment liquid incident on the treatment target surface, the trajectory deflecting surface having an inclination angle varying in a direction of annular extension of the trajectory deflecting surface; and a position changer which moves an incident position of the treatment liquid on the trajectory deflecting surface in the direction of annular extension of the trajectory deflecting surface.

Growing community of inventors

Yokohama, Japan

Konosuke Hayashi