Tokyo Ohka Kogyo Co., Ltd.

Komei Hirahara

Hiroaki Shimizu

Kyoko Ohshita

Hideo Hada

Tsuyoshi Nakamura

Takeshi Iwai

Takahiro Dazai

Akiya Kawaue

Takehiro Seshimo

Yuichi Suzuki

Masaru Takeshita

Keita Ishiduka

Takayoshi Mori

Kensuke Matsuzawa

Ryoji Watanabe

Tomoyuki Ando

Sho Abe

A method of forming a resist pattern including: forming a resist film on a substrate using a chemically amplified negative resist composition; forming a latent image of a first line and space pattern by subjecting the resist film to first exposure through a photomask; forming a latent image of a second line and space pattern so as to intersect with the latent image of the first line and space pattern by subjecting the resist film to second exposure through a photomask; and subjecting the resist film to developing to form a hole pattern in the resist film.

Method of forming resist pattern

A compound represented by general formula (b-14); and acid generator consisting of the compound; and a resist composition including a base component (A) which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the acid-generator component (B) including an acid generator (B1) consisting of a compound represented by general formula (b1-14): wherein R&#x2033; to R&#x2033; each independently represents an aryl group or an alkyl group, wherein two of R&#x2033; to R&#x2033; may be bonded to each other to form a ring with the sulfur atom, and at least one of R&#x2033; to R&#x2033; represents a substituted aryl group in which a portion or all of the hydrogen atoms are substituted with an alkoxyalkyloxy group or an alkoxycarbonylalkyloxy group; and Xrepresents an anion.

Resist composition, method of forming resist pattern, compound and acid generator

A polymer compound having a structural unit (a0) represented by a general formula (a0-1) shown below, and a structural unit (a1) that is derived from an acrylate ester containing an acid dissociable, dissolution inhibiting group but is not classified as said structural unit (a0). [wherein, R represents a hydrogen atom, a lower alkyl group, or a halogenated lower alkyl group; A represents a divalent aliphatic cyclic group that may have a substituent; B represents a divalent hydrocarbon group that may have a substituent; r represents an integer of 0 or 1; and Rrepresents an acid dissociable, dissolution inhibiting group]

Polymer compound, positive resist composition and method of forming resist pattern

A positive resist composition including a resin component (A) which exhibits increased solubility in an alkali developing solution under action of acid and has a structural unit (a1) represented by general formula (a1-0-2) shown below, and an acid-generator component (B) which generates acid upon exposure and includes an acid generator (B1) consisting of a compound represented by general formula (b1-12) shown below: wherein R represents a hydrogen atom, a lower alkyl group or a halogenated lower alkyl group; Xrepresents an acid dissociable, dissolution inhibiting group; and Yrepresents an alkylene group or a divalent aliphatic cyclic group; andR&#x2014;O&#x2014;Y&#x2014;SOA&#x2003;&#x2003;(b1-12)wherein Rrepresents a monovalent aromatic organic group; Yrepresents an alkylene group of 1 to 4 carbon atoms which may be substituted with a fluorine atom; and Arepresents a cation.

Positive resist composition and method of forming resist pattern

This resist composition according to the present invention includes a base component (A) which exhibits changed solubility in an alkali developing solution under action of acid, and an acid generator component (B) which generates an acid upon exposure, wherein the acid generator component (B) includes an acid generator (B1) represented by a general formula (b1-6-1) shown below and an acid generator (B2) represented by a general formula (b1-6-2) shown below: (wherein, Rrepresents a hydrogen atom or an alkyl group; Rrepresents a halogen atom, a halogenated alkyl group, an alkyl group, an acetyl group, a carboxyl group or a hydroxyalkyl group; Rand Reach independently represents a halogen atom, a halogenated alkyl group, an alkyl group, an acetyl group, an alkoxy group, a carboxyl group or a hydroxyalkyl group; nto neach independently represents an integer of 0 to 3, with the proviso that n+nis 5 or less; Reach independently represents a linear or branched alkyl group of 1 to 10 carbon atoms in which at least one hydrogen atom is substituted with a fluorine atom, and two of Rmay be bonded mutually to form a ring structure; Rrepresents a linear, branched or cyclic alkyl group, a linear, branched or cyclic halogenated alkyl group, an aryl group or an alkenyl group, which may contain a substituent group).

Resist composition and method of forming resist pattern

A resist composition including a base component (A) and an acid-generator component (B), the acid-generator component (B) including an acid generator (B1) including a compound represented by general formula (b1-8) shown below (wherein Rrepresents an acid dissociable, dissolution inhibiting group; Rto Reach independently represents a halogen atom, a halogenated alkyl group, an alkyl group, an acetyl group, an alkoxy group, a carboxy group or a hydroxyalkyl group; Q represents a divalent linking group or a single bond; and Xrepresents an anion) or an acid generator (B1') including a compound represented by general formula (b1-9) shown below (wherein Rand Reach independently represents a hydrogen atom, an alkyl group or a halogenated alkyl group; Rrepresents an alkyl group or a halogenated alkyl group, wherein Rand Rmay be bonded to each other to form a ring structure; and Xrepresents an anion). 

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Kawasaki, Japan

Komei Hirahara