Idemitsu Kosan Company, Limited

Prime Polymer Co., Ltd.

Koki Yano

Kazuyoshi Inoue

Hirokazu Kawashima

Shigekazu Tomai

Masashi Kasami

Nobuo Tanaka

Futoshi Utsuno

Tokie Tanaka, Legal Representative

Masayuki Itose

Kota Terai

Shigeo Matsuzaki

Kazuaki Ebata

Mami Nishimura

Masatoshi Shibata

Emi Kawashima

Akira Kaijo

Hiromi Hayasaka

Masato Matsubara

Satoshi Umeno

Misa Sunagawa

Yukio Shimane

Makoto Ando

Chihaya Adachi

Kenji Goto

Hajime Nakanotani

Yuki Tsuruma

Rikuo Onishi

Katsunori Honda

Inoue Kazuyoshi

A schottky barrier diode element having a silicon (Si) substrate, an oxide semiconductor layer and a schottky electrode layer, wherein the oxide semiconductor layer includes a polycrystalline and/or amorphous oxide semiconductor having a band gap of 3.0 eV or more and 5.6 eV or less.

Oxide semiconductor substrate and schottky barrier diode

A field effect transistor including: a substrate, and at least gate electrode, a gate insulating film, a semiconductor layer, a protective layer for the semiconductor layer, a source electrode and a drain electrode provided on the substrate, wherein the source electrode and the drain electrode are connected with the semiconductor layer therebetween, the gate insulating film is between the gate electrode and the semiconductor layer, the protective layer is on at least one surface of the semiconductor layer, the semiconductor layer includes an oxide containing In atoms, Sn atoms and Zn atoms, the atomic composition ratio of Zn/(In+Sn+Zn) is 25 atom % or more and 75 atom % or less, and the atomic composition ratio of Sn/(In+Sn+Zn) is less than 50 atom %.

Semiconductor film comprising an oxide containing in atoms, Sn atoms and Zn atoms

A Schottky barrier diode element includes an n-type or p-type silicon (Si) substrate, an oxide semiconductor layer, and a Schottky electrode layer, the oxide semiconductor layer including either or both of a polycrystalline oxide that includes gallium (Ga) as the main component and an amorphous oxide that includes gallium (Ga) as the main component.

To provide a thin film transistor having an indium oxide-based semiconductor film which allows only a thin metal film on the semiconductor film to be selectively etched. A thin film transistor having a crystalline indium oxide semiconductor film which is composed mainly of indium oxide and contains a positive trivalent metal oxide.

Thin film transistor having crystalline indium oxide semiconductor film

A sintered body which includes at least indium oxide and gallium oxide and comprises voids each having a volume of 14000 &#x3bc;mor more in an amount of 0.03 vol % or less.

Sintered material, and process for producing same

A sputtering target including indium (In), tin (Sn) and zinc (Zn) and an oxide including one or more elements X selected from the following group X,

[object Object]

An oxide sintered body includes indium oxide and gallium solid-solved therein, the oxide sintered body having an atomic ratio 'Ga/(Ga+In)' of 0.001 to 0.12, containing indium and gallium in an amount of 80 atom % or more based on total metal atoms, and having an InObixbyite structure.

Oxide sintered body and sputtering target

A sputtering target including indium, tin, zinc and oxygen, and including a hexagonal layered compound, a spinel structure compound and a bixbyite structure compound.

Sputtering target, transparent conductive film and transparent electrode

An oxide sintered body including an oxide of indium and aluminum and having an atomic ratio Al/(Al+In) of 0.01 to 0.08.

Sintered oxide body, target comprising the same, and oxide semiconductor thin film

Disclosed is a sputtering target having a good appearance, which is free from white spots on the surface. The sputtering target is characterized by being composed of an oxide sintered body containing two or more kinds of homologous crystal structures.

Sputtering target, method for forming amorphous oxide thin film using the same, and method for manufacturing thin film transistor

A thin film transistor including an active layer, and has a field-effect mobility of 25 cm/Vs or more, the active layer being formed of an oxide that includes In, Ga, and Zn in an atomic ratio that falls within the following region 1, region 2, or region 3, the region 1 being defined by 0.58&#x2266;In/(In+Ga+Zn)&#x2266;0.68 and 0.15&#x3c;Ga/(In+Ga+Zn)&#x2266;0.29, the region 2 being defined by 0.45&#x2266;In/(In+Ga+Zn)&#x3c;0.58 and 0.09&#x2266;Ga/(In+Ga+Zn)&#x3c;0.20, and the region 3 being defined by 0.45&#x2266;In/(In+Ga+Zn)&#x3c;0.58 and 0.20&#x2266;Ga/(In+Ga+Zn)&#x2266;0.27.

Sputtering target comprising an oxide sintered body comprising In, Ga, and Zn

A sputtering target including a sintered body including In, Ga and Mg,

Sputtering target

An oxide sintered body including indium element (In), gallium element (Ga) and tin element (Sn) in atomic ratios represented by the following formulas (1) to (3):0.10&#x2266;In/(In+Ga+Sn)&#x2266;0.60&#x2003;&#x2003;(1)0.10&#x2266;Ga/(In+Ga+Sn)&#x2266;0.55&#x2003;&#x2003;(2)0.0001&#x3c;Sn/(In+Ga+Sn)&#x2266;0.60&#x2003;&#x2003;(3).

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Sodegaura, Japan

Koki Yano