Mitsubishi Electric Corporation

Elpida Memory, Inc.

Koki Yamamoto

Akira Koshimizu

Shigeki Tsujii

Akihiro Oba

Provided are a lead frame that allows changing of arrangement of contact electrodes, and a sensor device using the same. The lead frame is configured such that, when conductive wires having contact electrodes are developed on a plane, the conductive wires extend from the contact electrodes so as not to cross each other and are turned at first turned portions. The inner two wires are defined as a first group, and the remaining wires are defined as a second group. Each first group conductive wire has a second and a third turned portion turned in the opposite direction, the first group conductive wires are bent in opposite to the second group conductive wires, using, as an axis of a bending portion.

Lead frame and sensor device using same

A sensor includes: a sensing module furnished with a sensing function; metal terminals transmitting a sensing signal from the sensing module; an insulating fixing portion holding multiple metal terminals separately; and a resin portion encapsulating the metal terminals and the sensing module and also forming a connector portion from which tip ends of the metal terminals are exposed. Protruding portions of the fixing portion are fit into hole portions of the metal terminals before resin encapsulation in a stage where the metal terminals are bonded to the sensing module, so that rigidity of the metal terminals is enhanced to stabilize the locations thereof.

Sensor with resin encapsulated terminal separation

A semiconductor memory device includes a memory cell array and a voltage generation circuit for generating a voltage applied to the memory cell array, in which a plurality of drive MOS transistors having different width dimensions are selectively connected in parallel between an output line and the ground. The voltage is adjusted in response to the surrounding temperature in such a way that a prescribed number of drive MOS transistors selected from among the plurality of MOS transistors are normally and simultaneously driven. Thus, it is possible to precisely adjust the voltage in units of adjustment corresponding to differences of width dimensions without degrading the performance of the semiconductor memory device in a low current consumption mode.

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Tokyo, Japan

Koki Yamamoto