Samsung Electro-mechanics Co., Ltd.

Koki Tanji

Tsuyoshi Sugiura

Eiichiro Otobe

Norihisa Otani

There is provided a high frequency switch having a reduced circuit scale while maintaining satisfactory harmonic characteristics in a transfer path of a high frequency signal. The high frequency switch includes: at least one transmission port; at least one reception port; a common port; transmission side series switches each including a body contact type FET; transmission side shunt switches each including a body contact type FET; reception side series switches each including a body contact type FET; and reception side shunt switches each including at least one floating body type FET.

High frequency switch

There is provided a high frequency switch capable of suppressing deterioration in distortion characteristics. The high frequency switch includes: a common port outputting a transmission signal to an antenna; a plurality of transmission ports each having the transmission signal input thereto; and a plurality of switching units each connected between the plurality of transmission ports and the common port to conduct or block the transmission signal from each of the transmission ports to the common port, wherein each of the switching units has one or more metal oxide semiconductor field effect transistors (MOSFETs) formed on a silicon substrate, and a capacitor connected between a body terminal of a MOSFET connected to the common port among the MOSFETs and a terminal of the MOSFET connected to the common port.

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Yokohama, Japan

Koki Tanji