Rohm Co., Ltd.

Koki Sakamoto

Shunsuke Akasaka

Tetsuo Fujii

Atsushi Yamaguchi

Ken Nakahara

Soichiro Arimura

Shunsuke Furuse

Yohei Moriyama

Semiconductor laser device Aincludes semiconductor laser element, switching elementhaving gate electrode, source electrodeand drain electrode, and support memberhaving conductive partthat forms a conduction path to switching elementand semiconductor laser elementand supports semiconductor laser elementand switching element. Conductive parthas front surface first sectionspaced apart from semiconductor laser element. Semiconductor laser device Aincludes at least one first wireconnected to source electrodeof switching elementand semiconductor laser elementand also at least one second wireconnected to source electrodeof switching elementand front surface first sectionof conductive part. Such an arrangement reduces the inductance component of semiconductor laser device A

Semiconductor laser device

A switching power supply circuit includes: a voltage generation circuit that generates an output voltage by smoothing, with a capacitor, a voltage produced in an inductor; an integration circuit that integrates a switching voltage to generate a first ripple voltage including a first ripple component; a feedback voltage generation circuit that divides the output voltage to generate a feedback voltage; a comparison circuit that compares the feedback voltage with a reference voltage to output the result of the comparison as a comparison result signal; an integration circuit that integrates the comparison result signal to generate a second ripple voltage including a second ripple component; and a drive circuit that controls the turning on and off of a switch element based on the comparison result signal, where the first ripple component and the second ripple component are added to the feedback voltage.

Switching power supply circuit

To provide both a photodetecting element and a photodetecting device which can prevent generating of a plurality of current paths, and can detect with stability and high sensitivity regardless of a surface state instability of an optical absorption layer. The photodetecting element includes an optically transparent substrate, an optical absorption layer, an electrode, an electrode, an adhesive layer, an insulating film, and a package. The optical absorption layer is formed on the optically transparent substrate, and a part of each the electrodes is embedded in the optical absorption layer. The photodetecting unit is bonded junction down with the adhesive layer on the package. The optical absorption layer absorbs light of a specified wavelength selectively to be converted into an electric signal. The light to be measured is irradiated from a back side surface of the optically transparent substrate.

Photodetecting element having an optical absorption layer, photodetecting device having an optical absorption layer, and auto lighting device

Two light receiving elements are formed on a support substrate. A first light receiving element is formed of a p-type layer, an n-type layer, a light absorption semiconductor layer, an anode electrode, a cathode electrode, a protection film, etc. A second light receiving element is formed of a p-type layer, an n-type layer, a transmissive film, an anode electrode, a cathode electrode, a protection film, etc. The light absorption semiconductor layer absorbs light in a wavelength range &#x3bb; and disposed closer to the light receiving surface than is the pn junction region. The transmissive film has no light absorption range and disposed closer to the light receiving surface than is the pn junction region. The amount of light in the wavelength range &#x3bb; is measured through computation using a detection signal from the first light receiving element and a detection signal from the second light receiving element.

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Kyoto, Japan

Koki Sakamoto