Semiconductor Energy Laboratory Co., Ltd.

Koki Inoue

Shunpei Yamazaki

Masashi Tsubuku

Hiromichi Godo

Masashi Oota

Noritaka Ishihara

Ryosuke Watanabe

Kengo Akimoto

Akiharu Miyanaga

Takayuki Inoue

Suzunosuke Hiraishi

Shuhei Yoshitomi

Erumu Kikuchi

Yusuke Koumura

Hidekazu Miyairi

Chiho Kokubo

Yoshitaka Dozen

Shigeru Tamaki

Fumiya Nagashima

Ayana Kimotsuki

A system with high processing speed and low power consumption is provided. The system includes an imaging device and an arithmetic circuit. The imaging device includes an imaging portion, a first memory portion, and an arithmetic portion, and the arithmetic circuit includes a second memory portion. The imaging portion has a function of converting light reflected by an external subject into image data, and the first memory portion has a function of storing the image data and a first filter for performing first convolutional processing in a first layer of a neural network. The arithmetic portion has a function of performing the first convolutional processing using the image data and the first filter to generate first data. The second memory portion has a function of storing the first data and a plurality of filters. The arithmetic circuit has a function of generating a depth map of the image data.

Imaging device utilizing a neural network

An authentication system for an electronic device with a high security level is provided. The authentication system includes a data retention means that accumulates first data related to a state of the electronic device being used by a first user registered in advance and generates a first data group, a first authentication means that authenticates a second user operating the electronic device as the first user and releases a locked state, a data acquisition means that acquires second data related to a state of the electronic device being used by the second user in a state where the locked state is released, and a second authentication means that authenticates the second user as the first user on the basis of the first data group and the second data and sets the electronic device to the locked state when the second user is not authenticated. The data retention means has a function of deleting the oldest first data of the plurality of pieces of the first data included in the first data group.

Authentication system for electronic device

The driving assistance system includes an imaging device capable of capturing a first monochrome image in a vehicle traveling direction, a first neural network for segmentation processing, a second neural network for depth estimation processing, a determination portion determining a center of a portion cut off from the first monochrome image on the basis of the segmentation processing and the depth estimation processing, a third neural network for colorization processing of only a second cut-off monochrome image, and a display device for enlargement of the second monochrome image subjected to the colorization processing.

Imaging system, driving assistance system, and program

Manufactured is a transistor including an oxide semiconductor layer, a source electrode layer and a drain electrode layer overlapping with part of the oxide semiconductor layer, a gate insulating layer overlapping with the oxide semiconductor layer, the source electrode layer, and the drain electrode layer, and a gate electrode overlapping with part of the oxide semiconductor layer with the gate insulating layer provided therebetween, wherein, after the oxide semiconductor layer which is to be a channel formation region is irradiated with light and the light irradiation is stopped, a relaxation time of carriers in photoresponse characteristics of the oxide semiconductor layer has at least two kinds of modes: &#x3c4;and &#x3c4;, &#x3c4;&#x3c;&#x3c4;is satisfied, and &#x3c4;is 300 seconds or less. In addition, a semiconductor device including the transistor is manufactured.

Transistor and semiconductor device

An oxide semiconductor stacked film which does not easily cause a variation in electrical characteristics of a transistor and has high stability is provided. Further, a transistor which includes the oxide semiconductor stacked film in its channel formation region and has stable electrical characteristics is provided. An oxide semiconductor stacked film includes a first oxide semiconductor layer, a second oxide semiconductor layer, and a third oxide semiconductor layer which are sequentially stacked and each of which contains indium, gallium, and zinc. The content percentage of indium in the second oxide semiconductor layer is higher than that in the first oxide semiconductor layer and the third oxide semiconductor layer, and the absorption coefficient of the oxide semiconductor stacked film, which is measured by the CPM, is lower than or equal to 3&#xd7;10/cm in an energy range of 1.5 eV to 2.3 eV.

Oxide semiconductor stacked film and semiconductor device

A manufacturing method of a semiconductor device with improved operating characteristics and reliability is provided. An amorphous semiconductor film is formed over a substrate, doped with a metal element promoting crystallization, and crystallized by first heat treatment to form a crystalline semiconductor film; a first oxide film formed over the crystalline semiconductor film is removed and a second oxide film is formed; the crystalline semiconductor film having the second oxide film formed thereover is irradiated with first laser light; a semiconductor film containing a rare gas element is formed over the second oxide film; the metal element contained in the crystalline semiconductor film is gettered to the semiconductor film containing a rare gas element by second heat treatment; the semiconductor film containing a rare gas element and the second oxide film are removed; and the crystalline semiconductor film is irradiated with second laser light in an atmosphere containing oxygen.

Manufacturing method of semiconductor device

Growing community of inventors

Atsugi, Japan

Koki Inoue