USA As Represented by Secretary of the Navy

Kok-Keong Lew

Charles R Eddy, Jr

David Kurt Gaskill

Rachael L Myers-Ward

Brenda L VanMil

Robert E Stahlbush

A method of: flowing a silicon source gas, a carbon source gas, and a carrier gas into a growth chamber under growth conditions to epitaxial grow silicon carbide on a wafer in the growth chamber; stopping or reducing the flow of the silicon source gas to interrupt the silicon carbide growth and maintaining the flow of the carrier gas while maintaining an elevated temperature in the growth chamber for a period of time; and resuming the flow of the silicon source gas to reinitiate silicon carbide growth. The wafer remains in the growth chamber throughout the method.

Method of producing epitaxial layers with low basal plane dislocation concentrations

A method of: supplying sources of carbon and silicon into a chemical vapor deposition chamber; collecting exhaust gases from the chamber; performing mass spectrometry on the exhaust gases; and correlating a partial pressure of a carbon species in the exhaust gases to a carbon:silicon ratio in the chamber.

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Hillsboro, OR, United States of America

Kok-Keong Lew