Hitachi-Kokusai Electric Inc.

Kojiro Yokozawa

Yoshiro Hirose

Naonori Akae

Ryota Sasajima

Yosuke Ota

Keishin Yamazaki

Akira Morohashi

Tomoharu Shimada

Provided is a method of manufacturing a semiconductor device. The method includes: (a) forming an oxide film having a predetermined thickness on a substrate by alternately repeating: (a-1) forming a layer containing a predetermined element on the substrate by supplying a source gas containing the predetermined element into a process vessel accommodating the substrate and exhausting the source gas from the process vessel; and (a-2) changing the layer containing the predetermined element into an oxide layer by supplying an oxygen-containing gas and an hydrogen-containing gas into the process vessel, wherein inside of the process vessel is under a heated atmosphere having a pressure lower than an atmospheric pressure; and exhausting the oxygen-containing gas and the hydrogen-containing gas from the process vessel; and (b) modifying the oxide film formed on the substrate by supplying the oxygen-containing gas and the hydrogen-containing gas into the process vessel, wherein the inside of the process vessel is under the heated atmosphere having the pressure lower than the atmospheric pressure, and exhausting the oxygen-containing gas and the hydrogen-containing gas from the process vessel.

Method of manufacturing semiconductor device and substrate processing apparatus

Provided is a substrate processing apparatus. The apparatus includes: a process vessel, a heater, a source gas supply system, an oxygen-containing gas supply system, a hydrogen-containing gas supply system, a pressure regulator, and a controller. The controller is configured to control the parts so as to perform: (a) forming an oxide film on a substrate by alternately repeating: (a-1) forming a layer by supplying a source gas into the process vessel accommodating the substrate; and (a-2) changing the layer into an oxide layer by supplying an oxygen-containing gas and an hydrogen-containing gas into the process vessel, the inside of the process vessel being under a heated atmosphere having a low pressure; and (b) modifying the oxide film formed on the substrate by supplying the oxygen-containing gas and the hydrogen-containing gas into the process vessel, the inside of the process vessel being under the heated atmosphere having the low pressure.

A heat treatment apparatus wherein a nozzle is accurately provided on an adaptor to prevent the nozzle from interfering with other part items and a possibility of breakage due to heat expansion of the nozzle can be reduced. The heat treatment apparatus () is provided with a reaction tube () for treating a substrate (), a quartz adaptor () for supporting the reaction tube (), a nozzle () connected to the adaptor () for supplying a treatment gas into the reaction tube (), and a heater () provided outside the reaction tube () for heating inside the reaction tube (). The nozzle () is connected to an upper plane of the adaptor () in the reaction tube () at least a part which is of the nozzle () and is connected with the adaptor () is made of quartz and other nozzle parts are made of silicon carbide.

Heat treatment apparatus and method of manufacturing substrates

Method of manufacturing semiconductor device, method of processing substrate, and substrate processing apparatus

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Toyama, Japan

Kojiro Yokozawa