Sony Corporation

Sony Semiconductor Solutions Corporation

National Institute of Advanced Industrial Science and Technology

Kojiro Yagami

Hiroyuki Ohmori

Hideshi Abe

Makoto Motoyoshi

Akio Fukushima

Tatsushiro Hirata

A fluorescent molded body includes a first surface that receives incident light from a laser light source, a second surface that faces the first surface, first and second lateral surfaces each contacting the second surface at a blunt angle, and a phosphor layer that is excited by light from the laser light source to emit a specific light. A distance between the position where the first and second lateral surfaces meet the second surface is less than two times the wavelength of the second light, such that evanescent waves generated at the first and second lateral surfaces by the second light, are coupled together to be converted into output light.

Illumination device including laser light source, molded body with obtusely inclined side surfaces, and phosphor layer

The present technology relates to a light emitting device and a light emitting method which readily emit high intensity light. Unipolar noise is applied to a plurality of rod-shaped metal antennas of a light emission mechanism including the plurality of metal antennas, radiating light by oscillation of electrons in the metal antennas caused by incident light. The present technology can be applied to a device for emitting light, such as an illumination device, for example.

Light emitting device and light emitting method

An infrared detector includes a source region and a drain region which are formed on a semiconductor substrate, an infrared ray absorbing film as a gate insulating film formed on the semiconductor substrate, and a gate electrode which is formed of a transparent electrode for infrared rays on the gate insulating film, in which, when a predetermined voltage is applied to the gate electrode, a predetermined current flows between the source region and the drain region.

Infrared detector and detection method thereof, and electronic apparatus

An infrared conversion device includes: a substrate (); and a metal fine particle layer () formed on the substrate (), wherein the metal fine particle layer () is formed with metal fine particles () and a dielectric material () that fills gaps between the metal fine particles () and absorbs incident infrared rays. Alternatively, an infrared conversion device detects infrared rays converted into visible light by detecting a change caused in the permittivity of a light receiving material () by infrared absorption as a change in the intensity of scattering light based on local plasmon resonance.

Infrared conversion device, imaging apparatus, and imaging method

A spin-injection magnetoresistance effect element that can avoid use of a large writing current and allows use of a large reading current. The spin-injection magnetoresistance effect element includes layers that may exhibit a tunnel magnetoresistance effect and layers that may exhibit a giant magnetoresistance effect.

Spin-injection magnetoresistance effect element

A magnetic memoryincludes a memory layerfor holding information by a magnetization state of a magnetic material, wherein the memory layeris composed of at least magnetic layersof two layers and a nonmagnetic layerinterposed between the magnetic layersof two layers, one magnetic layerof the magnetic layersof two layers has a large product of a magnetization damping constant, a magnetization amount and magnetic anisotropy and a small product of the magnetization amount and the magnetic anisotropy as compared with those of the other magnetic layer. Also, information is recorded on the magnetic memory devicewith application of an electric current flowing in the memory layer. Further, a magnetic memory includes the magnetic memory deviceto record information with application of an electric current flowing in the recording layer. There are provided a magnetic memory device capable of recording information with application of a low electric current and a magnetic memory device driving method for recording and reading information on and from the magnetic memory device and a magnetic memory including the magnetic memory device.

Low current magnetic memory

An ion beam processing system emitting an ion beam at a workpiece to process the workpiece, provided with an electrode for applying an electric field to the workpiece, the potential of the electrode being made 0V or a negative potential, and a cover insulated from the electrode arranged at an ion beam incidence side of the electrode, thereby preventing or suppressing sputtered particles from redepositing on a master pattern and the processed surface to form burrs, and an ion beam processing method used with the same.

Ion beam processing system and ion beam processing method

The present invention is aimed at enabling a spin-transfer magnetization switching in the random access magnetic memory by reducing a switching current density in the spin-transfer magnetization switching to an order smaller than 10 MA/cmand without causing breakdowns neither in the memory element which uses a TMR film nor in the element selection FET. The memory layer in the magnetoresistance effect element comprises a magnetic film having a value of saturation magnetization in a range from 400 kA/m to 800 kA/m. The memory layer comprises a magnetic film which contains one or more magnetic elements selected from the group of, for example, cobalt, iron and nickel, and which further contains a non-magnetic element. The non-magnetic element is contained at a ratio of, for example, 5 at % or more and less than 50 at %. A memory layerin the memory cell has a dimension less than 200 nm&#x3c6;.

Magnetoresistance effect element, method of manufacture thereof, magnetic storage and method of manufacture thereof

A method of preparing a ring-formed body comprises the steps of: forming, on a substrate, a column in a columnar form which serves as a core of a ring-formed body; depositing, on both the substrate and the column, a ring-formed body forming film for forming the ring-formed body so that the ring-formed body forming film formed on the substrate and that formed on the column are separated from each other; forming a mask film for covering the ring-formed body forming film; and subjecting the mask film and ring-formed body forming film to anisotropic dry etching so that the films remain on a sidewall of the column, forming a ring-formed body comprised of the ring-formed body forming film having the mask film.

Growing community of inventors

Kanagawa, Japan

Kojiro Yagami