Sanyo Electric Co., Ltd.

Kanto Sanyo Semiconductors Co., Ltd.

Semiconductor Components Industries, LLC

Sanyo Semiconductor Co., Ltd.

Kanto Sanyo Semiconductor Co., Ltd.

Kojiro Kameyama

Akira Suzuki

Mitsuo Umemoto

Yoshio Okayama

Kikuo Okada

Takahiro Oikawa

A semiconductor device with improved reliability and its manufacturing method is offered. The semiconductor device of this invention includes a pad electrode formed on a semiconductor substrate through a first insulation layer, and a via hole formed in the semiconductor substrate and extending from a back surface of the semiconductor substrate to the pad electrode, wherein the via hole includes a first opening of which a diameter in a portion close to the pad electrode is larger than a diameter in a portion close to the back surface of the semiconductor substrate, and a second opening formed in the first insulation layer and continuing from the first opening, of which a diameter in a portion close to the pad electrode is smaller than a diameter in a portion close to the front surface of the semiconductor substrate.

Method of manufacturing semiconductor device with through hole

In a power MOS transistor, for example, a source electrode is formed so as to be commonly connected to a plurality of source regions formed on the front surface. Thus, a current density varies based on in-plane resistance of the source electrode, thereby providing the necessity of increasing the number of wires connecting the sources and a lead. In the invention, an electrode structure includes a copper plating layerformed on a pad electrodeby an electrolytic plating method, and a nickel plating layerand a gold plating layer formed so as to cover the upper and side surfaces of the copper plating layerby an electroless plating method.

Electrode structure and semiconductor device

A peeling prevention layer for preventing an insulation film and a protection layer from peeling is formed in corner portions of a semiconductor device. The peeling prevention layer can increase its peeling prevention effect more when formed in a vacant space of the semiconductor device other than the corner portions, for example, between ball-shaped conductive terminals. In a cross section of the semiconductor device, the peeling prevention layer is formed on the insulation film on the back surface of the semiconductor substrate, and the protection layer formed of a solder resist or the like is formed covering the insulation film and the peeling prevention layer. The peeling prevention layer has a lamination structure of a barrier seed layer and a copper layer formed thereon when formed by an electrolytic plating method.

Method of manufacturing a semiconductor device with a peeling prevention layer

A result of formation of an opening in a semiconductor substrate can be judged without cutting a semiconductor wafer and observing a cross-section of the cut wafer. A semiconductor device of this invention includes a semiconductor substrate, a pad electrode formed on the semiconductor substrate, an opening formed in the semiconductor substrate to expose the pad electrode, a wiring layer connected with the pad electrode through the opening and a monitoring opening formed in a scribe line to monitor a result of the formation of the opening.

Semiconductor device and manufacturing method thereof

This invention provides a semiconductor device and a manufacturing method thereof which can minimize deterioration of electric characteristics of the semiconductor device without increasing an etching process. In the semiconductor device of the invention, a pad electrode layer formed of a first barrier layer and an aluminum layer laminated thereon is formed on a top surface of a semiconductor substrate. A supporting substrate is further attached on the top surface of the semiconductor substrate. A second barrier layer is formed on a back surface of the semiconductor substrate and in a via hole formed from the back surface of the semiconductor substrate to the first barrier layer. Furthermore, a re-distribution layer is formed in the via hole so as to completely fill the via hole or so as not to completely fill the via hole. A ball-shaped terminal is formed on the re-distribution layer.

Manufacturing method of semiconductor device with a barrier layer and a metal layer

The invention is directed to a semiconductor device having a penetrating electrode and a manufacturing method thereof in which reliability and a yield of the semiconductor device are enhanced. A semiconductor substrate is etched to form a via hole from a back surface of the semiconductor substrate to a pad electrode. This etching is performed under an etching condition such that an opening diameter of the via hole at its bottom is larger than a width of the pad electrode. Next, a second insulation film is formed on the back surface of the semiconductor substrate including in the via hole, exposing the pad electrode at the bottom of the via hole. Next, a penetrating electrode and a wiring layer are formed, being electrically connected with the pad electrode exposed at the bottom of the via hole. Furthermore, a protection layer and a conductive terminal are formed. Finally, the semiconductor substrate is cut and separated in semiconductor dies by dicing.

Semiconductor device and manufacturing method of the same

A punch-through type IGBT generally has a thick p-type collector layer. Therefore, the FWD need be externally attached to the IGBT when the IGBT is used as a switching element in an inverter circuit for driving a motor load, and thus the number of processes and components increases. In the invention, trenches are formed penetrating through a collector layer and reaching a buffer layer. A collector electrode is formed in the trenches, too. With this structure, a current path is formed between an emitter electrode and the collector electrode without through the collector layer and functions as the FWD.

Semiconductor device and method of manufacturing the same

The first pad electrode layer is disposed on the surface of the semiconductor substrate with the first insulating film between them. Then, the second insulating film with the first via hole partially exposing the first pad electrode layer is formed over the first pad electrode layer. The plug is formed in the first via hole in the next process. The second pad electrode layer connected to the plug is disposed on the second insulating film. Next, the second via hole reaching to the first pad electrode layer from the backside of the semiconductor substrate is formed. The penetrating electrode and the second wiring layer connected to the first pad electrode layer at the bottom part of the second via hole are disposed. Furthermore, the protecting layer and the conductive terminal are formed. Finally, the semiconductor substrate is diced into the semiconductor chips.

Semiconductor device with penetrating electrode

The invention is directed to a semiconductor device having a penetrating electrode and a manufacturing method thereof in which reliability and a yield of the semiconductor device are enhanced. A refractory metal layer is formed on a pad electrode formed on a semiconductor substrate with a first insulation film therebetween. Next, a passivation layer is formed on a front surface of the semiconductor substrate including on the pad electrode and on the refractory metal layer, and a supporting body is further formed with a resin layer therebetween. Next the semiconductor substrate is etched to form a via hole from a back surface of the semiconductor substrate to the pad electrode. Next, a penetrating electrode electrically connected with the pad electrode exposed at a bottom of the via hole and a wiring layerare formed with a second insulation film therebetween. Furthermore, a solder resist layer and a conductive terminal are formed. Finally, the semiconductor substrate is cut and separated into semiconductor dies by dicing.

The invention provides an electrostatically chucking technology capable of chucking a workpiece formed of an insulator or a workpiece attached with an object to be processed such as a semiconductor wafer on a stage. A layered body attached with a glass substrate for supporting a semiconductor substrate having an electronic device on its surface is prepared, and a conductive film is attached thereto. Then, the layered body is set on a surface of a stage set in a vacuum chamber such as a dry-etching apparatus. After then, a voltage is applied to an internal electrode to generate positive and negative electric charges on the surfaces of the conductive film and the stage, and the layered body is chucked with static electricity generated therebetween. Then, the layered body chucked on the stage is processed by etching, CVD, or PVD.

Chucking method and processing method using the same

Semiconductor device with via hole for electric connection

The invention is directed to improvement of reliability of a semiconductor device having penetrating electrodes by preventing a protection film and an insulation film peeling. A peeling prevention layer for preventing an insulation film and a protection layer peeling is formed in corner portions of the semiconductor device. The peeling prevention layer can increase its peeling prevention effect more when formed in a vacant space of the semiconductor device other than the corner portions, for example, between ball-shaped conductive terminals. In a cross section of the semiconductor device, the peeling prevention layer is formed on the insulation film on the back surface of the semiconductor substrate, and the protection layer formed of a solder resist or the like is formed covering the insulation film and the peeling prevention layer. The peeling prevention layer has a lamination structure of a barrier seed layer and a copper layer formed thereon when formed by an electrolytic plating method.

Growing community of inventors

Gunma, Japan

Kojiro Kameyama