Murata Manufacturing Co., Ltd.

Murata Kikai Kabushiki Kaisha

Koji Yamamoto

Tsutomu Takai

Seiji Kai

Hisashi Yamazaki

Katsuya Daimon

Hideki Iwamoto

Takashi Yamane

Hideaki Takahashi

Yuji Miwa

Yasumasa Taniguchi

Masashi Omura

Munehisa Watanabe

Katsuhiro Ikada

Yoshitaka Nose

Masatoshi Nakagawa

Noriyoshi Ota

Shin Saijo

Atsushi Tanaka

Ryo Otsubo

An acoustic wave device includes first and second electrode fingers on a piezoelectric layer, and third and fourth electrode fingers and a plurality of fourth electrode fingers are provided on the piezoelectric layer. A connection section includes second and third busbars. The second busbar is on the piezoelectric layer and is connected to one end of each of the second electrode fingers. The third busbar is on the piezoelectric layer and is connected to one end of each of the third electrode fingers. A stress relaxation layer is between the connection section and the piezoelectric layer. The stress relaxation layer does not extend to any of a gap between each of the first electrode fingers and the second busbar and a gap between each of the fourth electrode fingers and the third busbar in a plan view from a thickness direction of a support substrate.

Acoustic wave device

An acoustic wave device includes a piezoelectric substrate and an IDT electrode on the piezoelectric substrate. The IDT electrode includes first and second electrode fingers. When the propagation direction of acoustic waves is a first direction and the direction orthogonal or substantially orthogonal to the first direction is a second direction, an intersecting region of the IDT electrode includes a central region located toward the middle in the second direction and first and second edge regions on both sides in the second direction of the central region. The first and second electrode fingers include epitaxially grown oriented films in the central region and portions that do not include the oriented films in the first and second edge regions.

An acoustic wave device includes a laminated film on a support substrate and inside a portion of an outer edge of the support substrate in plan view and including a piezoelectric thin film, an IDT electrode on the laminated film, an insulating layer on the support substrate and the laminated film and extending from a region above the support substrate to a region above the laminated film, a connecting electrode on the insulating layer and electrically connected to the IDT electrode, and an external connection terminal electrically connected to the connecting electrode and disposed directly on or above the connecting electrode and outside a region where the laminated film is on the support substrate. A principal surface of the support substrate on the laminated film side includes a recess at an outer edge of the laminated film, and the recess is covered with the insulating layer.

Acoustic wave device, radio-frequency front-end circuit, and communication apparatus

An acoustic wave device includes a high-acoustic-velocity film, a low-acoustic-velocity film provided on the high-acoustic-velocity film, a piezoelectric layer provided on the low-acoustic-velocity film, and an IDT electrode provided on the piezoelectric layer. An acoustic velocity of bulk waves propagating through the high-acoustic-velocity film is higher than an acoustic velocity of acoustic waves propagating through the piezoelectric layer. An acoustic velocity of bulk waves propagating through the low-acoustic-velocity film is lower than an acoustic velocity of bulk waves propagating through the piezoelectric layer. The low-acoustic-velocity film includes a material including hydrogen atoms.

An elastic wave device includes a SiNlayer stacked directly or indirectly on a supporting substrate made of a semiconductor material, a piezoelectric film stacked on directly or indirectly the SiNlayer, and an interdigital transducer electrode stacked directly or indirectly on at least one main surface of the piezoelectric film. In the SiNlayer, x is about 1.34 or more and about 1.66 or less.

Elastic wave device, high-frequency front-end circuit, and communication apparatus

An acoustic wave device includes a high-acoustic-velocity film, a piezoelectric layer provided directly or indirectly on the high-acoustic-velocity film, an IDT electrode provided on the piezoelectric layer, and a dielectric film provided on the piezoelectric layer to cover the IDT electrode. An acoustic velocity of bulk waves propagating through the high-acoustic-velocity film is higher than an acoustic velocity of acoustic waves propagating through the piezoelectric layer. The dielectric film includes a material including hydrogen atoms.

An elastic wave device includes a lamination layer film including a piezoelectric thin film on a support substrate. The lamination layer film is not partially present in a region located in an outer side portion of a region where IDT electrodes are provided. A first insulation layer extends from at least a portion of a region where the lamination layer film is not present to an upper portion of the piezoelectric thin film. A wiring electrode extends from the upper portion of the piezoelectric thin film to an upper portion of the first insulation layer, and extends onto a section of the first insulation layer in the region.

Elastic wave device

An elastic wave device includes a lamination layer film including a piezoelectric thin film on a support substrate. The lamination layer film is not partially present in a region located in an outer side portion of a region where IDT electrodes are provided. A first insulation layer extends from at least a portion of a region where the lamination layer film is not present to an upper portion of the piezoelectric thin film. A wiring electrode has a width of about 6 &#x3bc;m and extends from the upper portion of the piezoelectric thin film to an upper portion of the first insulation layer, and extends onto a section of the first insulation layer in the region.

An elastic wave device includes a supporting substrate, a high-acoustic-velocity film disposed on the supporting substrate, a low-acoustic-velocity film disposed on the high-acoustic-velocity film, a piezoelectric layer disposed on the low-acoustic-velocity film, and an interdigital transducer electrode disposed on the piezoelectric layer. The acoustic velocity of a bulk wave that propagates through the high-acoustic-velocity film is higher than the acoustic velocity of an elastic wave that propagates through the piezoelectric layer. The acoustic velocity of a bulk wave that propagates through the low-acoustic-velocity film is lower than the acoustic velocity of an elastic wave that propagates through the piezoelectric layer. The high-acoustic-velocity film is composed of SiN, where x&#x3c;about 0.67.

Elastic wave device, multiplexer, high-frequency front-end circuit, and communication apparatus

In an elastic wave device, a multilayer film including a piezoelectric thin film is provided on a support substrate, an interdigital transducer electrode is provided on one surface of the piezoelectric thin film, a wiring electrode is connected to the interdigital transducer electrode, the wiring electrode includes a lead electrode portion and a pad electrode portion, an external connection terminal is located above the pad electrode portion, the external connection terminal is electrically connected to the pad electrode portion, and the external connection terminal is bonded onto the pad electrode portion on the support substrate so that at least the piezoelectric thin film of the multilayer film is not present below the pad electrode portion.

Elastic wave device and manufacturing method thereof

An IDT electrode of an elastic wave device includes a first electrode film made of Al or mainly containing Al, a second electrode film with a density larger than that of the first electrode film, an anti-diffusion film which is located between the first electrode film and the second electrode film and which significantly reduces or prevents interdiffusion between the first electrode film and the second electrode film, and a first Ti film located between the first electrode film and the anti-diffusion film, to diffuse a diffusion material into the first electrode film.

Elastic wave device and method for manufacturing the same

A surface acoustic wave device includes a sealing resin for sealing a gap between a surface acoustic wave element and a mounting board. The sealing resin is prevented from flowing so as to reach a vibrating portion of the surface acoustic wave element. In the surface acoustic wave device, a surface acoustic wave element is connected to a mounting board through bumps, the outer peripheral edge of the surface acoustic wave element is sealed by a sealing resin, and a vibration space is secured between the vibrating portion of the surface acoustic wave element and mounting board. In the surface acoustic wave element, an outer barrier enclosing the bumps and the vibrating portion and an inner barrier enclosing the vibrating portion are provided, the height of the outer barrier is lower than the total height of the height of the bumps and the height of electrode lands formed on the mounting board, and the height of the inner barrier is lower than the height of the bumps.

Surface acoustic wave device

An ordinary facsimile by itself cannot scan a thick material such as books and catalogs. In order to scan the entire book, for example, each page of the book should first be copied by a copy machine and these sheets are then loaded into the facsimile. The improved flat bed scanner is connected to the facsimile to eliminate the copying operation. The flat bed scanner scans any thick material by simply loading it on its scanning glass and the scanned data is transmitted to the facsimile. Since the flat bed scanner is attached to the facsimile, personal computer or the like, it should be compact in size and low in cost. To reduce the cost, an outer cover of the flat bed scanner is produced by simple sheet metal processing, and the rough corner portions resulting from such a simple processing are hidden by corner members attached thereto. Inside the outer cover, located are a power source, a main control board and a stationary optical part. A middle cover extends over these components. First scanning part and second scanning part are positioned above the middle cover inside the outer cover. A wire for connecting the power source with the main control board is inserted in two tubes so that it does interfere with the components in the outer cover and the wire can bend at a point between the two tubes.

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Nagaokakyo, Japan

Koji Yamamoto