Nifco Inc.

International Business Machines Corporation

Toray Industries, Inc.

Sony Corporation

The Yokohama Rubber Co., Ltd.

Takeda Pharmaceutical Company Limited

Nissan Motor Company Limited

Fujitsu Corporation

Ricoh Company, Ltd.

Honda Motor Co., Ltd.

Nikon Corporation

Ube Industries, Inc.

Kabushiki Kaisha Toyoda Jidoshokki Seisakusho

Nhk Spring Co., Ltd.

Kawasaki Jukogyo Kabushiki Kaisha

Koji Watanabe

Yusuke Yoshida

Ruqiang Bao

Hemanth Jagannathan

Miyoshi Okamoto

Choonghyun Lee

Izumi Kuramochi

Shogo Mochizuki

Yasutomo Kobayashi

Nobuyuki Takakura

Hideki Furukawa

Yasufumi Miyamoto

Jumpei Aida

Yasuhiro Hirata

Yosuke Kondo

Seiji Miwatashi

Tenko Yamashita

Takashi Ando

Chen Zhang

Oleg Gluschenkov

Vijay Narayanan

Reinaldo Ariel Vega

Robert Russell Robison

Hiroshi Tokizaki

Gauri V Karve

Paul Charles Jamison

Manabu Nonaka

Shahab Siddiqui

Rishikesh Krishnan

Gen Tsutsui

Kenji Katori

Masato Wakamura

Derrick Liu

Norio Uemura

Daniel James Dechene

Kai Zhao

Tsuyoshi Maekawa

Tomohiro Okawa

Kaoru Hashimoto

Kyoichiro Kawano

Masahiro Tanaka

Shizuo Kasai

Hiromichi Nakayama

Toshitake Kobayashi

Shuji Kitamura

Zenichi Ikeda

Charlotte DeWan Adams

Akito Shibuya

Katsuyuki Hironaka

Masahiro Kawaguchi

Jingyun Zhang

Akira Tange

Kazuya Kimura

Hiroshi Ito

Toshiyuki Nishihara

Kenji Yamane

Muthumanickam Sankarapandian

Makoto Kano

Satoshi Sasaki

Akio Machida

Shigeo Kubota

Takumi Morito

Toshihiko Hayashi

Yasunobu Youda

Yuji Ueda

Tatsuhiko Goi

Tetsu Morino

Kenichiro Tanaka

Hisashi Masuda

Kenichiro Endo

Jing Guo

Shinichiro Naruse

Yasuhiro Kawashima

Yuichi Mori

Yoshimasa Hashimoto

Norihito Tokunaga

Akira Nakagawa

Takaaki Ami

Isamu Kishizoe

Takafumi Hashimoto

Takuo Yuda

Kazuhiko Minami

Hajime Nishida

Toshie Tanaka

Hideki Higashidozono

Taiji Asami

Kazuaki Takami

Kotaro Iwabuchi

Isao Fujii

Taku Kudoh

Ichiro Hirata

Koichi Tatsuki

Shigemitsu Matsumoto

Kenichi Nakashima

Yoshio Kaneko

Eiki Yoshimizu

Kazushige Sugimoto

Naoki Nishizawa

Akihiro Fujita

Shoji Asanuma

The present invention provides a compound or a salt thereof having a calcium-sensing receptor antagonistic activity, and being expected to be useful as an agent for preventing or treating heart failure, pulmonary hypertension, or the like. The compounds represented by formula (I) or a salt thereof has a calcium-sensing receptor antagonistic activity, and is expected to be useful as an agent for preventing or treating heart failure, pulmonary hypertension, or the like, wherein each symbol is as described in the specification.

Heterocyclic compounds having a calcium-sensing receptor antagonistic activity

A method of forming a semiconductor structure includes forming a first nanosheet stack and a second nanosheet stack on a semiconductor substrate. The first nanosheet stack includes a plurality of alternating first sacrificial layers and first channel layers. The first sacrificial layers each define a first sacrificial height. The second nanosheet stack includes a plurality of alternating second sacrificial layers and second channel layers. The second sacrificial layers each define a second sacrificial height greater than the first sacrificial height of the first sacrificial layers. The method further includes removing the first and second sacrificial layers respectively from the first and second nanosheet stacks. A metal gate is deposited over the first and second nanosheet stacks to form respective first and second nanosheet transistor structures.

Gate oxide for nanosheet transistor devices

A device is provided. The device includes an interfacial layer on a semiconductor device channel. The device further includes a dipole layer on the interfacial layer, and a gate dielectric layer on the dipole layer. The device further includes a first work function layer associated with a first field effect transistor device; and a second work function layer associated with a second field effect transistor device, such that the first field effect transistor device and second field effect transistor device each have a different threshold voltage than a first field effect transistor device and second field effect transistor device without a dipole layer.

Multi-threshold voltage non-planar complementary metal-oxide-semiconductor devices

A semiconductor structure includes a semiconductor substrate, with first, second, and third field effect transistors (FETs) formed on the substrate. A gate of the first FET includes a gate electrode, a first work function metal (WFM) layered with a first interfacial layer (IL) and a first high-k dielectric (HK); a gate of the second FET includes the first WFM layered with a second IL, a second HK, and a first dipole material; and a gate of the third FET includes the first WFM layered with a third IL, a third HK, the first dipole material, and a second dipole material. The first FET does not include the first dipole material and does not include the second dipole material, and the second FET does not include the second dipole material.

Gate stack dipole compensation for threshold voltage definition in transistors

A resin molding systemcomprises a gripping deviceprovided with a gripping framefor gripping a resin sheet material, a heating device for heating the resin sheet materialand a molding device for clamping a lower dieand an upper die, and affixing the resin sheet materialto a substrate. The molding device is provided with: a lowering device for lowering the gripping deviceand causing the resin sheet materialgripped by the gripping frameto approach the lower die; and a pair of bent postswhich are provided on both Y-direction sides of the lower die, and which come in contact with portions of the gripping framewhen the gripping deviceis lowered, and which convexly bend the gripping frameupward as viewed from the side along the Y-direction.

Resin molding system and resin molding method

The seal ring is annular around an axis x and includes an annular outer peripheral surface facing an outer periphery side, and a plurality of recessed parts. The recessed parts are formed in such a way as to be spaced apart from each other in a circumferential direction and are recessed from the outer peripheral surface toward an inner periphery side. The recessed parts expand, in the axis x direction, from one side surface to a position which does not reach another side surface. The outer peripheral surface includes a annular contact surface between the another side surface and the position, and rib surfaces respectively between mutually neighboring recessed parts in the circumferential direction. Each of the rib surfaces extends between the one side surface and the position in the axis x direction.

Seal ring

A seal ring capable of stabilizing sealing performance while reducing rotation torque. A seal ringhas a plurality of first dynamic pressure generation grooveand a plurality of second dynamic pressure generation grooveon an outer peripheral surface thereof with intervals in the circumferential direction, the plurality of first dynamic pressure generation grooveextending from a position close to a first side surfaceA with respect to the center of width in an axial direction to the first side surfaceA and configured to generate dynamic pressure with relative rotation between a housing and the seal ring, and the plurality of second dynamic pressure generation grooveextending from a position close to a second side surfaceB with respect to the center of width in the axial direction to the second side surfaceB and configured to generate dynamic pressure with the relative rotation between the housing and the seal ring

Provided is a novel aromatic ring compound which may have a GPR40 agonist activity and a GLP-1 secretagogue action. A compound represented by the formula (I): wherein each symbol is as described in the DESCRIPTION, or a salt thereof may have a GPR40 agonist activity and a GLP-1 secretagogue action, may be useful for the prophylaxis or treatment of cancer, obesity, diabetes, hypertension, hyperlipidemia, cardiac failure, diabetic complications, metabolic syndrome, sarcopenia and the like, and may afford superior efficacy.

Aromatic compound

Multi-threshold voltage non-planar complementary metal-oxtde-semiconductor devices

A method of forming a semiconductor structure includes forming one or more vertical fins each including a first semiconductor layer providing a vertical transport channel for a lower vertical transport field-effect transistor (VTFET) of a stacked VTFET structure, an isolation layer over the first semiconductor layer, and a second semiconductor layer over the isolation layer providing a vertical transport channel for an upper VTFET of the stacked VTFET structure. The method also includes forming a first gate stack including a first gate dielectric layer and a first gate conductor layer surrounding a portion of the first semiconductor layer of the vertical fins. The method further includes forming a second gate stack including a second gate dielectric layer and a second gate conductor layer surrounding a portion of the second semiconductor layer of the vertical fins. The first gate conductor layer and the second gate conductor layer are the same material.

Hybrid gate stack integration for stacked vertical transport field-effect transistors

Provided is a novel aromatic ring compound which may have a GPR40 agonist activity and a GLP-1 secretagogue action. A compound represented by the formula (I): wherein each symbol is as described in the DESCRIPTION, or a salt thereof may have a GPR40 agonist activity and a GLP-1 secretagogue action, may be useful for the prophylaxis or treatment of cancer, obesity, diabetes, hypertension, hyperlipidemia, cardiac failure, diabetic complications, metabolic syndrome, sarcopenia and the like, and may afford superior efficacy. 

Substituted cyclyl-acetic acid derivatives for the treatment of metabolic disorders

Seal

Growing community of inventors

Kanagawa, Japan

Koji Watanabe