Shimadzu Corporation

Shindengen Electric Manufacturing Company Limited

Shindengen Sensor Device Co., Ltd.

Koji Watadani

Kenji Sato

Junichi Suzuki

Toshinori Yoshimuta

Shingo Furui

Satoru Morita

Satoshi Yamaguchi

Hidetoshi Kishimoto

Yoichiro Shimura

Nobuya Nagafune

Narumi Yamaguchi

Hideo Tsuruta

Provided is a light source device for a collimator capable of improving an illuminance ratio in an inside of a visible light's radiation field to an outside thereof. The light source device for a collimator includes an LED with a light emitting portion that irradiates visible light and a visible light guide member. The visible light guide member may have a main body, a spacer, and a base. In the main body, a through-hole of a truncated conical shape is formed. The through-hole of a truncated cone shape forms a first opening at a first surface of the main body on a side of the LED and a second opening a second surface of the main body opposite to the first surface. The first opening may be smaller than the second opening. The conical surface of the through-hole having the truncated conical shape is formed as a mirror surface which reflects the visible light irradiated from the LED with high reflectance.

Light source device for collimator

A radiation detector of this invention has a curable synthetic resin film covering exposed surfaces of a radiation sensitive semiconductor layer, a carrier selective high resistance film and a common electrode, in which a material allowing no chloride to mix in is used in a manufacturing process of the curable synthetic resin film. This prevents pinholes and voids from being formed by chlorine ions in the carrier selective high resistance film and semiconductor layer. Also a protective film which does not transmit ionic materials may be provided between the exposed surface of the common electrode and the curable synthetic resin film, thereby to prevent the carrier selective high resistance film from being corroded by chlorine ions included in the curable synthetic resin film, and to prevent an increase of dark current flowing through the semiconductor layer.

Radiation detector

The construction of this invention includes an active matrix substrate, an amorphous selenium layer, a high resistance layer, a gold electrode layer, an insulating layer and an auxiliary plate laminated in this order. In one aspect of the present invention, the insulating layer has an inorganic anion exchanger added thereto in order to provide a radiation detector which prevents void formation and pinhole formation in the amorphous semiconductor layer and carrier selective high resistance film, without accumulating electric charges on the auxiliary plate. The inorganic anion exchanger adsorbs chloride ions in the insulating layer, thereby preventing destruction of X-ray detector due to the chloride ions drawn to the gold electrode layer.

Radiation detector, and a radiographic apparatus having the same

In a radiation detector according to this invention, a portion of a semiconductor, located in a connection of a common electrode to a lead wire, is dented in a recess form from other portions of a semiconductor, in a range short of a radiation detection effective area. An insulating seat is disposed to fill the portion located in the connection. The common electrode is formed to cover at least part of the seat. The lead wire is connected to a portion of the incidence surface of the common electrode located on the seat. Thus, the detector can avoid performance degradation resulting from connection of the lead wire to the common electrode, and avoid problems of heat deformation stress and radiation attenuation.

The radiation detector according to this invention has a common electrode for bias voltage application formed on a surface of an amorphous selenium semiconductor film (a-Se semiconductor film) sensitive to radiation. The common electrode is a gold thin film having a thickness in a range of 100 to 1,000 &#x212b;. The gold thin film acting as the common electrode may be formed on the surface of the a-Se semiconductor film at a relatively low vapor deposition temperature and in a reduced vapor deposition time. This feature suppresses a generation of defects in the a-Se semiconductor film due to formation of the common electrode. The gold thin film for the common electrode is not so thick as in the prior art, but is 1,000 &#x212b; or less. With the reduced thickness, the common electrode has improved boding property with respect to the a-Se semiconductor film.

A portion corresponding to a surface lid section of a cabinet is formed using a nonconductive material. A structure is molded by using an insulating substance, an insulating plate member, and an insulating weir member so as to entirely cover a radiation-sensitive semiconductor and a voltage application electrode on an active matrix substrate. The area from the outer frame of the cabinet to the margin of the voltage application electrode is shielded by a shield member so as to cover any area, other than the portion just above the voltage application electrode, from above the insulating plate member.

Radiological image pickup apparatus

A radiation detector of this invention has an electrically insulating buffer seat disposed on a front surface of a radiation sensitive semiconductor, in a position outside a radiation detection effective area. A common electrode for bias voltage application is formed to cover the buffer seat. A lead wire for bias voltage supply is connected to a lead wire connection area, located on the buffer seat, of the surface of the common electrode. The buffer seat reduces a shock occurring when the lead wire is connected to the common electrode. As a result, the semiconductor and an intermediate layer are protected from damage which would lead to a lowering of performance. The buffer seat is disposed outside the radiation detection effective area. Thus, the buffer seat is provided without impairing the radiation detecting function.

Growing community of inventors

Kyoto, Japan

Koji Watadani