Kabushiki Kaisha Toshiba

Semiconductor Technology Academic Research Center

Koji Usuda

Shinichi Takagi

Tsutomu Tezuka

Yoshihiko Moriyama

Haruhiko Takahashi

Masaki Yoshimaru

Masaharu Oshima

Keisaku Yamada

Ziyuan Liu

Liu Guo-lin

Kazuto Ikeda

A semiconductor device according to an embodiment includes: a substrate; a first semiconductor layer formed on the substrate and having a strain; a second and a third semiconductor layers formed at a distance from each other on the first semiconductor layer, and having a different lattice constant from a lattice constant of the first semiconductor layer; a gate insulating film formed on a first portion of the first semiconductor layer, the first portion being located between the second semiconductor layer and the third semiconductor layer; and a gate electrode formed on the gate insulating film. At least one of outer surface regions of the second semiconductor layer and a second portion of the first semiconductor layer is a first silicide region, and at least one of outer surface regions of the third semiconductor layer and a third portion of the first semiconductor layer is a second silicide region, the second and third portions being located immediately below the second and third semiconductor layers respectively.

Semiconductor device and method of manufacturing the same

It is made possible to restrict strain relaxation even if a strained semiconductor element is formed on a very small minute layer. A semiconductor device includes: a substrate; a first semiconductor layer formed into a mesa shape above the substrate and having strain, and including source and drain regions of a first conductivity type located at a distance from each other, and a channel region of a second conductivity type different from the first conductivity type, the channel region being located between the source region and the drain region; second and third semiconductor layers formed on the source and drain regions, and controlling the strain of the first semiconductor layer, the second and third semiconductor layers containing impurities of the first conductivity type; a gate insulating film formed on the channel region; and a gate electrode formed on the gate insulating film.

Semiconductor device and method for manufacturing the same

A stacked film has an insulating film containing hafnium formed above a silicon layer and a polysilicon layer formed on the insulating film. The stacked film is heated in an atmosphere containing oxygen and nitrogen and having the total pressure approximately equal to a partial pressure of the nitrogen.

Method of manufacturing an insulating film containing hafnium

A method of manufacturing a semiconductor device, includes preparing a semiconductor substrate, bonding a first semiconductor layer onto a part of the semiconductor substrate with a first insulating layer interposed therebetween, forming a second insulating layer on a side of the first semiconductor layer, epitaxially growing a second semiconductor layer in a region on the semiconductor substrate other than a region formed with the first insulating layer, forming a first semiconductor element in the first semiconductor layer on the first insulating layer, and forming a second semiconductor element in the second semiconductor layer on the second insulating layer.

A semiconductor apparatus includes a substrate, a buffer layer made of a monocrystal semiconductor material and formed on the substrate, a strained-Si layer formed on the buffer layer and having a lattice constant different from that of the buffer layer, a monocrystal insulating film formed on the strained-Si layer and made of a material having a rare earth structure with a lattice constant different from that of Si, and an electrode formed on the insulating film.

Semiconductor apparatus having first and second gate electrodes

A semiconductor device comprises a base substrate, an insulating film formed on the substrate, an undoped first and lattice-relaxed semiconductor layer formed on the insulating film, a second semiconductor layer having a tensile strain and formed on the first semiconductor layer, and a MISFET formed on the second semiconductor layer. Since the MISFET is formed in a strained Si layer, electrons are prevented from scattering in a channel region, improving the electron mobility. Furthermore, since the MISFET is formed in a thin SOI layer having a thickness of 100 nm or less, it is possible to reduce a parasitic capacitance in addition to the improvement of the electron mobility. As a result, the MISFET excellent in drivability can be obtained.

Semiconductor apparatus with monocrystal insulating film

There is disclosed a method of manufacturing a semiconductor device, wherein a semiconductor layer having an acute projection containing polycrystalline silicon is formed on a substrate, and then, an insulating layer is formed on the semiconductor layer through an oxidation of the semiconductor layer by excited oxygen species in such a manner that a radius of curvature of the acute projection of the semiconductor layer becomes 20 nm or more.

A method of preparing a semiconductor work surface comprises the steps of forming an Si monocrystaline substrate including a semiconductor work surface, removing by wet-etching a silicon oxide film formed on the work surface, using HF solution, and washing the work surface by pure water, serving as a washing liquid, of a dissolved oxygen concentration of 500 ppb or lower. The work surface is made of monocrystal and has an orientation a certain amount off the (001) plane. The certain amount is set such that an axis of the work surface has a component inclined with an angle of from 1.degree. to 5.degree. from the [001] direction to a &lt;010&gt; direction. The washing liquid of pure water has a property of etching the Si monocrystal, such that a single or a plurality of surfaces, including the (111) plane, can be preferentially exposed.

Growing community of inventors

Yokohama, Japan

Koji Usuda