Sumitomo Electric Industries, Limited

Koji Uematsu

Seiji Nakahata

Takuji Okahisa

Ryu Hirota

Shinsuke Fujiwara

Hideaki Nakahata

Yoshiyuki Yamamoto

Yuki Seki

Naoki Matsumoto

Kensaku Motoki

Issei Satoh

Michimasa Miyanaga

Fumitaka Sato

Takao Nakamura

Youichi Nagai

Makoto Kiyama

Naho Mizuhara

Fumitake Nakanishi

Hitoshi Kasai

Keisuke Tanizaki

Hideki Osada

Keiji Ishibashi

Takashi Sakurada

Takuya Yanagisawa

Yuki Hiromura

Katsushi Akita

Yusuke Yoshizumi

Akihiro Hachigo

Koji Katayama

Hideyuki Ijiri

Susumu Yoshimoto

Hidenori Mikami

Hiroaki Yoshida

Shunsuke Fujita

Ayako Ikeda

Masashi Yoshimura

Tomohiro Kawase

Hideki Matsubara

Tomoki Uemura

Manabu Okui

Masaki Ueno

Shin Hashimoto

Toshihiro Kotani

Masanori Morishita

Muneyuki Nishioka

Haruko Tanaka

A gallium arsenide single crystal substrate having a main surface, in which a ratio of the number of As atoms existing as diarenic trioxide to the number of As atoms existing as diarsenic pentoxide is greater than or equal to 2 when the main surface is measured by X-ray photoelectron spectroscopy, in which an X-ray having energy of 150 eV is used and a take-off angle of a photoelectron is set to 5°. Arithmetic average roughness (Ra) of the main surface is less than or equal to 0.3 nm.

Gallium arsenide single crystal substrate and method for producing gallium arsenide single crystal substrate

Provided are a group III nitride composite substrate having a low sheet resistance and produced with a high yield, and a method for manufacturing the same, as well as a method for manufacturing a group III nitride semiconductor device using the group III nitride composite substrate. A group III nitride composite substrate includes a group III nitride film and a support substrate formed from a material different in chemical composition from the group III nitride film. The group III nitride film is joined to the support substrate in one of a direct manner and an indirect manner. The group III nitride film has a thickness of 10 &#x3bc;m or more. A sheet resistance of a group III-nitride-film-side main surface is 200 &#x3a9;/sq or less.

Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device

A group III nitride composite substrate with a diameter of 75 mm or more includes a support substrate and a group III nitride film with a thickness of 50 nm or more and less than 10 &#x3bc;m that are bonded to each other. A ratio s/mof a standard deviation sof the thickness of the group III nitride film to a mean value mof the thickness thereof is 0.01 or more and 0.5 or less, and a ratio s/mof a standard deviation sof an absolute value of an off angle between a main surface of the group III nitride film and a plane of a predetermined plane orientation to a mean value mof the absolute value of the off angle is 0.005 or more and 0.6 or less.

Group III nitride composite substrate and method for manufacturing the same, laminated group III nitride composite substrate, and group III nitride semiconductor device and method for manufacturing the same

Group III nitride crystal produced by cutting, from III nitride bulk crystal, a plurality of Group III nitride crystal substrates with major-surface plane orientation misoriented five degrees or less with respect to a crystal-geometrically equivalent plane orientation selected from the group consisting of {20-21}, {20-2-1}, {22-41}, and {22-4-1}, transversely arranging the substrates adjacent to each other such that their major surfaces are parallel to each other and such that their [0001] directions coincide with each other, and growing a Group III nitride crystal on the major surfaces. The Group III nitride crystal substrates are further characterized by satisfying at least either an oxygen-atom concentration of 1&#xd7;10cmto 4&#xd7;10cmor a silicon-atom concentration of 6&#xd7;10cmto 5&#xd7;10cm, and by having a carrier concentration of 1&#xd7;10cmto 6&#xd7;10cm.

Group III nitride crystal substrates and group III nitride crystal

Affords a method of growing, across the entirety of a major surface of a first III-nitride crystal, a second III-nitride crystal by HVPE, in an ambient temperature higher than 1100&#xb0; C. The present III-nitride crystal growth method comprises: a step of preparing a first III-nitride crystal () having an alkali-metal atom concentration of less than 1.0&#xd7;10cm; and a step of growing a second III-nitride crystal () onto a major surface () of the first III-nitride crystal () by HVPE, in an ambient temperature higher than 1100&#xb0; C.

Method of growing III-nitride crystal

A composite base of the present invention includes a sintered base and a base surface flattening layer disposed on the sintered base, and the base surface flattening layer has a surface RMS roughness of not more than 1.0 nm. A composite substrate of the present invention includes the composite base and a semiconductor crystal layer disposed on a side of the composite base where the base surface flattening layer is located, and a difference between a thermal expansion coefficient of the sintered base and a thermal expansion coefficient of the semiconductor crystal layer is not more than 4.5&#xd7;10K. Thereby, a composite substrate in which a semiconductor crystal layer is attached to a sintered base, and a composite base suitably used for that composite substrate are provided.

Composite base including sintered base and base surface flattening layer, and composite substrate including that composite base and semiconductor crystalline layer

A GaN-crystal free-standing substrate obtained from a GaN crystal grown by HVPE with a (0001) plane serving as a crystal growth plane and at least one plane of a {10-11} plane and a {11-22} plane serving as a crystal growth plane that constitutes a facet crystal region, except for the side surface of the crystal, wherein the (0001)-plane-growth crystal region has a carbon concentration of 5&#xd7;10atoms/cmor less, a silicon concentration of 5&#xd7;10atoms/cmor more and 2&#xd7;10atoms/cmor less, and an oxygen concentration of 1&#xd7;10atoms/cmor less; and the facet crystal region has a carbon concentration of 3&#xd7;10atoms/cmor less, a silicon concentration of 5&#xd7;10atoms/cmor less, and an oxygen concentration of 5&#xd7;10atoms/cmor more and 5&#xd7;10atoms/cmor less.

GaN-crystal free-standing substrate and method for producing the same

Group-III nitride crystal composites made up of especially processed crystal slices, cut from III-nitride bulk crystal, whose major surfaces are of {1-10&#xb1;2}, {11-2&#xb1;2}, {20-2&#xb1;1} or {22-4&#xb1;1} orientation, disposed adjoining each other sideways with the major-surface side of each slice facing up, and III-nitride crystal epitaxially present on the major surfaces of the adjoining slices, with the III-nitride crystal containing, as principal impurities, either silicon atoms or oxygen atoms. With x-ray diffraction FWHMs being measured along an axis defined by a &#x3c;0001&#x3e; direction of the substrate projected onto either of the major surfaces, FWHM peak regions are present at intervals of 3 to 5 mm width. Also, with threading dislocation density being measured along a &#x3c;0001&#x3e; direction of the III-nitride crystal substrate, threading-dislocation-density peak regions are present at the 3 to 5 mm intervals.

Composite of III-nitride crystal on laterally stacked substrates

The present invention is to provide a method for growing a group III nitride crystal that has a large size and has a small number of pits formed in the main surface of the crystal by using a plurality of tile substrates. A method for growing a group III nitride crystal includes a step of preparing a plurality of tile substratesincluding main surfaceshaving a shape of a triangle or a convex quadrangle that allows two-dimensional close packing of the plurality of tile substrates; a step of arranging the plurality of tile substratesso as to be two-dimensionally closely packed such that, at any point across which vertexes of the plurality of tile substratesoppose one another, 3 or less of the vertexes oppose one another; and a step of growing a group III nitride crystalon the main surfacesof the plurality of tile substrates arranged.

Method for growing group III nitride crystal

The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate including a support substrate dissoluble in hydrofluoric acid and a single crystal film arranged on a side of a main surface of the support substrate, a coefficient of thermal expansion in the main surface of the support substrate being more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal, forming a GaN-based film on a main surface of the single crystal film arranged on the side of the main surface of the support substrate, and removing the support substrate by dissolving the support substrate in hydrofluoric acid. Thus, the method of manufacturing a GaN-based film capable of efficiently obtaining a GaN-based film having a large main surface area, less warpage, and good crystallinity, as well as a composite substrate used therefor are provided.

Method of manufacturing GaN-based film and composite substrate used therefor

Group-III nitride crystal composites made up of especially processed crystal slices, cut from III-nitride bulk crystal, whose major surfaces are of {1-10&#xb1;2}, {11-2&#xb1;2}, {20-2&#xb1;1} or {22-4&#xb1;1} orientation, disposed adjoining each other sideways with the major-surface side of each slice facing up, and III-nitride crystal epitaxially present on the major surfaces of the adjoining slices, with the III-nitride crystal containing, as principal impurities, either silicon atoms or oxygen atoms.

A method for producing a Group III nitride crystal includes the steps of cutting a plurality of Group III nitride crystal substratesandhaving a major surface from a Group III nitride bulk crystal, the major surfacesandhaving a plane orientation with an off-angle of five degrees or less with respect to a crystal-geometrically equivalent plane orientation selected from the group consisting of {20&#x2212;21}, {20&#x2212;2&#x2212;1}, {22&#x2212;41}, and {22&#x2212;4&#x2212;1}, transversely arranging the substratesandadjacent to each other such that the major surfacesandof the substratesandare parallel to each other and each [0001] direction of the substratesandcoincides with each other, and growing a Group III nitride crystalon the major surfacesandof the substratesand

Method for producing group III nitride crystal

A GaN single crystal substrate has a main surface with an area of not less than 10 cm, the main surface has a plane orientation inclined by not less than 65&#xb0; and not more than 85&#xb0; with respect to one of a (0001) plane and a (000-1) plane, and the substrate has at least one of a substantially uniform distribution of a carrier concentration in the main surface, a substantially uniform distribution of a dislocation density in the main surface, and a photoelasticity distortion value of not more than 5&#xd7;10, the photoelasticity distortion value being measured by photoelasticity at an arbitrary point in the main surface when light is applied perpendicularly to the main surface at an ambient temperature of 25&#xb0; C. Thus, the GaN single crystal substrate suitable for manufacture of a GaN-based semiconductor device having a small variation of characteristics can be obtained.

GaN single crystal substrate having a large area and a main surface whose plane orientation is other than (0001) and (000-1)

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Itami, Japan

Koji Uematsu