Kabushiki Kaisha Toshiba

Toshiba Memory Corporation

Other

Skhynix Inc.

Mitsubishi Electric Corporation

Hitachi Software Engineering Company, Ltd.

Koji Ueda

Toshihiko Nagase

Daisuke Watanabe

Tadashi Kai

Kazuya Sawada

Youngmin Eeh

Katsuya Nishiyama

Makoto Nagamine

Hiroaki Yoda

Eiji Kitagawa

Tadaomi Daibou

Yutaka Hashimoto

Masahiko Nakayama

Masaru Tokou

Koji Yamakawa

Shinji Yuasa

Koji Ando

Akio Fukushima

Hitoshi Kubota

Won Joon Choi

Kay Yakushiji

Taro Nagahama

Bo Mi Lee

Guk Cheon Kim

Yang Kon Kim

Young-Min Eeh

Katsuaki Natori

Hisanori Aikawa

Daisuke Ikeno

Won-Joon Choi

Guk-Cheon Kim

Yang-Kon Kim

Kenji Noma

Hideaki Kato

Cha-Deok Dong

Hisanori Nobe

Bo-Mi Lee

Ki Seon Park

Kazumasa Sunouchi

Yoshiyuki Sera

Akira Kurosawa

Hiroshi Mizukami

Daisuki Watanbe

Tom Ikeda

An electronic control device includes a first pull-up resistor connected between a power supply and a switch, a series circuit of a transistor and a second pull-up resistor with a resistance value lower than that of the first pull-up resistor, connected in parallel with the first pull-up resistor, and a microcomputer, an output port of which is connected to a base terminal of the transistor and which controls a turning on and off of the transistor using a signal output from the output port. A connection point of the switch, the first pull-up resistor, and the second pull-up resistor is connected to a first analog measurement port of the microcomputer, a power supply is connected to a second analog measurement port of the microcomputer, and current flowing into the switch is detected using a value of voltage input into the first analog measurement port.

Electronic control device

According to one embodiment, a semiconductor storage device includes: a first memory cell and a second memory cell, each including a switching element and a resistance change element coupled to the switching element, and the first memory cell and the second memory cell being adjacent to each other; a non-active member having a switching function between the switching element of the first memory cell and the switching element of the second memory cell; and an insulator which covers at least one of an upper surface or a lower surface of the non-active member, a side surface of the non-active member, a side surface of the switching element of the first memory cell, and a side surface of the switching element of the second memory cell.

Semiconductor storage device

According to one embodiment, a magnetic memory device includes a lower region, and a stacked structure provided on the lower region, wherein the stacked structure includes a conductive oxide layer containing boron (B), a first magnetic layer provided between the lower region and the conductive oxide layer, having a variable magnetization direction, and containing iron (Fe) and boron (B), a second magnetic layer provided between the lower region and the first magnetic layer, having a fixed magnetization direction, and containing iron (Fe) and boron (B), and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer.

Magnetic memory device

According to one embodiment, a magnetoresistive element includes a first metal layer having a body-centered cubic structure, a second metal layer having a hexagonal close-packed structure on the first metal layer, a metal nitride layer on the second metal layer, a first magnetic layer on the metal nitride layer, an insulating layer on the first magnetic layer, and a second magnetic layer on the insulating layer.

Magnetoresistive element and memory device

According to one embodiment, there is provided a magnetoresistive element, including a first magnetic layer, a nonmagnetic layer on the first magnetic layer, and a second magnetic layer on the nonmagnetic layer, wherein one of the first and second magnetic layers include one of Co and Fe, and a material having a higher standard electrode potential than Co and Fe.

Magnetoresistive element

A magnetoresistive element includes a storage layer as a ferromagnetic layer which has magnetic anisotropy perpendicular to film planes, and in which a magnetization direction is variable, a reference layer as a ferromagnetic layer which has magnetic anisotropy perpendicular to film planes, and in which a magnetization direction is invariable, a tunnel barrier layer as a nonmagnetic layer formed between the storage layer and the reference layer, and a first underlayer formed on a side of the storage layer, which is opposite to a side facing the tunnel barrier layer, and containing amorphous W.

A magnetoresistive element including a first magnetic layer; a first nonmagnetic layer provided on the first magnetic layer, the first nonmagnetic layer formed of SrTiO, SrFeO, LaAlO, NdCoO, or BN; and a second magnetic layer provided on the first nonmagnetic layer, wherein the first nonmagnetic layer is lattice-matched to the first magnetic layer, and the second magnetic layer is lattice-matched to the first nonmagnetic layer.

According to one embodiment, a magnetic memory includes a first magnetic layer, a second magnetic layer, a non-magnetic intermediate layer provided between the first magnetic layer and the second magnetic layer and an underlying layer provided on an opposite side of the first magnetic layer with respect to the intermediate layer, and the underlying layer contains AlN of a hcp structure.

Magnetic memory and manufacturing method of the same

An electronic device that includes a first structure including a first magnetic layer, a second magnetic layer, and a tunnel barrier layer which is interposed between the first magnetic layer and the second magnetic layer; and a second structure disposed over the first structure, and including a magnetic correction layer for correcting a magnetic field of the first structure, wherein a width of a bottom surface of the second structure is larger than a width of a top surface of the first structure.

Electronic device and method for fabricating the same

According to one embodiment, a magnetoresistive element comprises a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, a second nonmagnetic layer, and a third magnetic layer. The first magnetic layer has a variable magnetization direction. The second magnetic layer has an invariable magnetization direction and includes a nonmagnetic material film and a magnetic material film. The first nonmagnetic layer is arranged between the first magnetic layer and the second magnetic layer. The second nonmagnetic layer is arranged on a surface of the second magnetic layer. The third magnetic layer is arranged on a surface of the second nonmagnetic layer. The second nonmagnetic layer is in contact with the nonmagnetic material film included in the second magnetic layer.

Magnetoresistive element and magnetic random access memory

According to one embodiment, there is provided a magnetoresistive element, including a lower electrode having crystallinity on a substrate, a first conductive layer including an amorphous state on the lower electrode, a buffer layer on the first conductive layer, and an MTJ element on the buffer layer.

Magnetoresistive element and manufacturing method of the same

According to one embodiment, a magnetoresistive memory device, includes a metal buffer layer provided on a substrate, a crystalline metal nitride buffer layer provided on the metal buffer layer, and a magnetoresistive element provided on the metal nitride buffer layer. The metal nitride buffer layer and the metal buffer layer contain a same material.

Method of manufacturing a magnetoresistive memory device

According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes an underlayer containing aluminum (Al), nitrogen (N) and X. The X is an element other than Al and N. A first magnetic layer is provided on the underlayer. A nonmagnetic layer is provided on the first magnetic layer. A second magnetic layer is provided on the nonmagnetic layer.

Magnetoresistive element and manufacturing method thereof

An electronic device includes a semiconductor memory, and the semiconductor memory includes a first magnetic layer having a variable magnetization direction; a second magnetic layer having a pinned magnetization direction; and a tunnel barrier layer interposed between the first magnetic layer and the second magnetic layer, wherein the second magnetic layer includes a ferromagnetic material with molybdenum (Mo) added thereto.

Electronic device

According to one embodiment, a magnetoresistive memory device includes a first magnetic layer, a second magnetic layer, a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, and a third magnetic layer provided on a side of the first or second magnetic layer opposite to the nonmagnetic layer. The third magnetic layer has a multilayer film having an artificial lattice structure, and the third magnetic layer is partly microcrystalline or amorphous.

Magnetoresistive memory device

Growing community of inventors

Kamakura, Japan

Koji Ueda