Canon Anelva Corporation

Anelva Corporation

National Institute of Advanced Industrial Science and Technology

Canaon Anelva Corporation

Koji Tsunekawa

David Djulianto Djayaprawira

Yoshinori Nagamine

Hiroki Maehara

Naoki Watanabe

Motonobu Nagai

Shinji Yamagata

Shinji Yuasa

Shinji Furukawa

Daisuke Nakajima

Masahiro Suenaga

Tomoaki Osada

Takeo Konno

Hiroyuki Hosoya

Mihoko Doi

Nobuo Yamaguchi

Shuji Nomura

Motomu Kosuda

Ayumu Miyoshi

Young-suk Choi

Kanto Nakamura

Naokion Watanabe

A sputtering apparatus according to one embodiment of the present invention includes a substrate holder, a cathode unit arranged at a position diagonally opposite to the substrate holder, a position sensor for detecting a rotational position of the substrate, and a holder rotation controller for adjusting a rotation speed of the substrate according to the detected rotational position. The holder rotation controller controls the rotation speed so that the rotation speed of the substrate when the cathode unit is located on a side in a first direction as an extending direction of a process target surface of the relief structure is lower than the rotation speed of the substrate when the cathode unit is located on a side in a second direction which is perpendicular to the first direction along the rotation of the substrate.

Sputtering apparatus, film deposition method, and control device

A magnetoresistance device has an MgO (magnesium oxide) layer provided between a first ferromagnetic layer and a second ferromagnetic layer. The device is manufactured by forming a film of the MgO layer in a film forming chamber. A substance whose getter effect with respect to an oxidizing gas is large is adhered to surfaces of components provided in the chamber for forming the MgO layer. The substance having a large getter effect is a substance whose value of oxygen gas adsorption energy is 145 kcal/mol or higher. Ta (tantalum), in particular, is preferable as a substance which constitutes the magnetoresistance device.

Method of manufacturing magnetoresistive device

Disclosed is a sputtering apparatus having a target () disposed offset with respect to a substrate (), wherein the uniformity of a deposition amount can be ensured even when a substrate support holder () has a low number of rotations of several rotations to several tens of rotations and the amount of deposition is extremely small to provide such a film thickness of 1 nm or less. A control unit () is provided to control a rotational velocity V (rps) of the substrate support holder () to satisfy:by inputting the value of a deposition time T and the values of a total whole number of rotations N and a fractional number of rotations &#x3b1; which are expressed as:X=N+&#x3b1;

Sputtering apparatus and recording medium for recording control program thereof

The present invention provides a manufacturing apparatus which can realize so-called sequential substrate transfer and can improve throughput, even when one multi-layered thin film includes plural layers of the same film type. A manufacturing apparatus according to an embodiment of the present invention includes a transfer chamber, three sputtering deposition chambers each including one sputtering cathode, two sputtering deposition chambers each including two or more sputtering cathodes, and a process chamber for performing a process other than sputtering, and the three sputtering deposition chambers, the two sputtering deposition chambers, and the process chamber are arranged around the transfer chamber so that each is able to perform delivery and receipt of the substrate with the transfer chamber.

Manufacturing apparatus

An objective of the present invention is to provide a sputtering apparatus capable of obtaining an adequate film thickness distribution on a substrate surface even if a target projection plane is kept from being projected on the substrate. A sputtering apparatus includes: a process chamber; a substrate holder being rotatable in an in-plane direction of the substrate while holding the substrate; and a sputtering cathode located obliquely to the substrate holder, and arranged to incline to the substrate holder. A projection plane of a target holding surface of the sputtering cathode projected in a direction along a center normal line to the target holding surface onto a plane containing a substrate mounting surface of the substrate holder is formed outside the substrate mounting surface of the substrate holder, and the center normal line to the substrate mounting surface and the center normal line to the sputtering cathode are not coplanar.

Sputtering apparatus and sputtering method

Provided is a high-quality magnetoresistive thin film by using a method of controlling self bias of a high-frequency sputtering device. In order to control the self bias for the substrate by adjusting a substrate potential, the high-frequency sputtering device according to the present invention includes: a chamber; evacuation means for evacuating the inside of the chamber; gas introduction means for supplying a gas into the chamber; a substrate holder provided with a substrate mounting table; rotation drive means capable of rotating the substrate holder; a sputtering cathode provided with a target mounting table and arranged such that the surface of the target mounting table is non-parallel to the surface of the substrate mounting table; an electrode disposed inside the substrate holder; and a variable impedance mechanism electrically connected to the electrode, for adjusting the substrate potential on the substrate holder.

High-frequency sputtering device

A magnetoresistance effect device including a multilayer structure having a pair of ferromagnetic layers and a barrier layer positioned between them, wherein at least one ferromagnetic layer has at least the part contacting the barrier layer made amorphous and the barrier layer is an MgO layer having a highly oriented texture structure.

Magnetoresistance effect device and method of production of the same

The magnetic anisotropy of a magnetic layer in a spin valve tunnel magnetoresistive element or giant magnetoresistive element is enhanced. Deposition of the magnetic layer is performed by making sputtering particles obliquely incident on a substrate from a certain incident direction at a certain incident angle.

Method of manufacturing magnetoresistive element, sputter deposition chamber, apparatus for manufacturing magnetoresistive element having sputter deposition chamber, program and storage medium

The present invention provides a vacuum heating/cooling apparatus capable of rapidly heating and also rapidly cooling only a substrate while a high vacuum degree is maintained after film-formation processing. The vacuum heating/cooling apparatus according to an embodiment of the present invention includes a vacuum chamber (), a halogen lamp () which emits heating light, a quartz window () for allowing the heating light to enter the vacuum chamber (), a substrate supporting base () having a cooling function, and a lift pin () which causes the substrate () to stand still at a heating position Pand a cooling position Pand moves the substrate () between the heating position Pand the cooling position P

Vacuum heating/cooling apparatus and manufacturing method of magnetoresistance element

Method of production of a magnetoresistance effect device

The present invention is to reduce the variation in axis of easy magnetization of a magnetic thin film with respect to a large diameter substrate. A plasma processing apparatus () includes: a substrate holder () that supports a substrate (); a magnet holder () that is provided around the substrate holder and supports a magnet (); a cathode unit () that is provided above the substrate, and applied with a discharge voltage; a rotating mechanism () that is capable of rotating one or both of the substrate holder and the magnet holder along the planar direction of the process surface of the substrate; a rotational position sensor () that detects the rotating positions of the substrate and the magnet; and a control device () that controls an operation of each operation element. The control device controls the rotating mechanism of the substrate holder and/or the magnet holder to swingingly vary the relative angle between an axis of easy magnetization set in the process surface of the substrate and the magnetic field generated by the magnet during the formation of the magnetic thin film by sputtering, based on a detection signal from the rotational position sensor.

Plasma processing apparatus, magnetoresistive device manufacturing apparatus, magnetic thin film forming method, and film formation control program

A magnetoresistive device has an MgO (magnesium oxide) layer provided between a first ferromagnetic layer and a second ferromagnetic layer. The device is manufactured by forming a film of the MgO layer in a film forming chamber. A substance whose getter effect with respect to an oxidizing gas is large is adhered to surfaces of components provided in the chamber for forming the MgO layer. The substance having a large getter effect is a substance whose value of oxygen gas adsorption energy is 145 kcal/mol or higher. Ta (tantalum), in particular, is preferable as a substance which constitutes the magnetoresistive device.

Method of manufacturing magnetoresistive device and apparatus for manufacturing the same

According to the present invention, it can be switched whether or not to apply a magnetic field to a substrate depending on a material of a film to be formed, and a magnetic layer and a non-magnetic layer can be formed in the same chamber. A sputtering apparatusincludes a substrate holderconfigured to support a substrate W; magnet holdersthat are disposed around the substrate holder; magnetsthat are movably loaded on the magnet holders; supporting membersthat protrude from the substrate holder so as to face the magnets; connecting membersthat protrude from the magnets to face the substrate holder; a rotation mechanismconfigured to rotationally move at least one of the substrate holder and the magnet holders; and a connection switching mechanismconfigured to move, when positions of the supporting members and the connecting members are matched to each other by rotational movement of the rotation mechanism, the substrate holder upward and downward to engage the supporting members and the connecting members with each other or separate the supporting members and the connecting members from each other, and switch whether or not to apply a magnetic field to the substrate W.

Growing community of inventors

Kawasaki, Japan

Koji Tsunekawa