Canon Kabushiki Kaisha

Koji Teranishi

Satoshi Takaki

Kenji Ando

Hidehiro Kanazawa

Atsushi Yamagami

Kazuyoshi Akiyama

Shigeru Hashimoto

Keiji Hirabayashi

Yasuyuki Suzuki

Hiroyuki Kubo

Takayuki Miura

Yusuke Owaki

Kyoko Imai

Kazue Takata

Kyoko Nagata

Provided is a method of producing an optical element forming mold, the method including forming a ta-C filmon a mold matrixfor an optical element forming mold by an FCVA process, in which the mold matrixis kept at a floating potential, a voltage is applied to a mold matrix-holding memberfor holding the mold matrix via insulating members (), and a magnetinternally provided in the mold matrix forms a magnetic field for applying a magnetic force in a normal direction of a transfer surface of the mold matrix so as to follow a magnetic force applied by a filter coil, thereby homogenizing the film quality.

Method of producing optical element forming mold and optical element forming mold

In a reactive sputtering apparatus, an inert-gas supplying hole is provided in a movable target unit whose one end is open and whose conductance is controlled, and a reactive gas containing at least fluorine or oxygen can be supplied to a space between the target and a substrate. The apparatus is constructed so as to emit the reactive gas toward the substrate. A reactive-gas emitting location is in the space between the target and the substrate such that a concentration of the reactive gas on the substrate surface can be maintained at a higher level. When the target is moved, a reactive-gas emitting port is moved or the reactive-gas emitting location is changed. The concentration of the reactive gas on the substrate surface can be effectively kept constant, and a high-quality optical thin film can be formed.

Reactive sputtering method

A multilayer film reflector for X-rays has alternately stacked layers formed on a substrate and comprising a layer (high refractive index layer) comprising a material having a large difference between a refractive index to soft X-ray and a refractive index in vacuum, and a layer (low refractive index layer) comprising a material having a small difference between a refractive index to soft X-ray and a refractive index in vacuum, wherein at least one intermediate layer having a crystalline structure is provided between the low refractive index layer and the high refractive index layer. Thereby, the crystallization of the low refractive index layer is promoted, the refractive index of the low refractive index layer is lowered, so that the reflectance of the multilayer film reflector is improved.

Multilayer film reflector for soft X-rays and manufacturing method thereof

An antireflection film includes alternately deposited high-refractive-index layers and low-refractive-index layers. The refractive indexes and extinction coefficients of the layers are such that the antireflection film exhibits sufficient antireflection characteristics even if the geometrical thickness thereof is small. An optical element having the antireflection film on a substrate exhibits high transmittance and has excellent optical characteristics.

Optical element with antireflection film

Antireflection film and optical element having the same

A plasma processing apparatus has a substrate holder, arranged in a vessel which can be reduced in pressure, for placing a substrate to be processed there on, a process gas fed into the reaction vessel, and a cathode electrode for supplying a high-frequency wave power from a high-frequency wave power source to an interior of the reaction vessel through a matching circuit, and is characterized in that at least a part of the reaction vessel is constituted by a dielectric member, and the cathode electrode is arranged outside the reaction vessel, so that a plasma distribution in the reaction vessel is made uniform and a uniform plasma process for a substrate to be processed is made possible. The plasma process includes CVD, sputtering, etching or ashing.

Plasma processing apparatus

Plasma CVD process

A plasma CVD system has a reactor which can be evacuated, a substrate holding means in the reactor, a material gas feed means for feeding into the reactor a material gas for plasma CVD, a high-frequency power supply means for supplying an electrode high-frequency power of 30 MHz to 600 MHz, generated by a high-frequency power source, and means for exhausting gas remaining in the reactor after the reaction. The high-frequency power is supplied to produce a plasma across a substrate in the reactor to form a deposited film on the substrate, and the phase of reflected power is adjusted on the electrode at a side opposite the feeding point. High-quality deposited films having very uniform film thickness and homogeneous film quality can be formed at a high rate and stably on large-area substrates having any shapes.

Plasma CVD system

A high frequency introducing means is provided which comprises a high frequency electrode having a shape of a bar or plate for generating plasma by high frequency power, and an adjustment mechanism for adjusting an absolute value of reactance between an end of the electrode opposite to a high frequency power introducing point of the electrode and a grounded portion. A plasma treatment apparatus and a plasma treatment method are also provided employing the above high frequency introducing means. A deposition film of high quality is formed stably and efficiently in an extremely uniform thickness and an extremely uniform quality at a high speed on a base member of a large area by adjusting the absolute value of the reactance.

High-frequency introducing means, plasma treatment apparatus, and plasma

A plasma processing apparatus has a substrate holder, arranged in a reaction vessel which can be reduced in pressure, for placing a substrate to be processed thereon, means for feeding a process gas into the reaction vessel, and a cathode electrode for supplying a high-frequency wave power from a high-frequency wave power source to an interior of the reaction vessel through a matching circuit, and is characterized in that at least a part of the reaction vessel is constituted by a dielectric member, and the cathode electrode is arranged outside the reaction vessel, so that a plasma distribution in the reaction vessel is made uniform, and a uniform plasma process for a substrate to be processed is made possible. The plasma process includes CVD, sputtering, etching or ashing.

Growing community of inventors

Kanagawa, Japan

Koji Teranishi