Renesas Electronics Corporation

Renesas Technology Corp.

Hitachi, Ltd.

Koji Tateno

Ryotaro Kudo

Kyoichi Hosokawa

Toshio Nagasawa

Daisuke Kondo

Akihiko Kanouda

Tomoaki Uno

Takashi Sase

Noboru Akiyama

Yumi Kishita

Hideki Miyazaki

Masahiro Iwamura

Mutsuhiro Mori

Katsunori Suzuki

Takayuki Hashimoto

Junichi Sakano

Takuya Ishigaki

Shin Chiba

Takashi Hirao

Katsunori Hayashi

Hideo Ishii

Shinichi Yoshida

Takahiro Nomiyama

Hitoshi Matsuura

Nobuyoshi Matsuura

Mutsumi Kikuchi

Masaki Shiraishi

Fumio Murabayashi

Yoshinao Miura

Hiroyuki Shoji

Nao Nagata

Tetsuya Kawashima

Kazuyuki Umezu

Yoshihiko Yokoi

Yusuke Ojima

Koji Saikusa

Shinya Ishida

Hideo Numabe

Chang Liu

A semiconductor integrated circuit device includes a first voltage terminal, a second voltage terminal, an output terminal, a high-side MOSFET connected between the first voltage terminal and the output terminal, a low-side MOSFET connected between the output terminal and the second voltage terminal and having first and second gate electrodes, a drive circuit that complementally switches on and off the high-side MOSFET and low-side MOSFET, and a second gate electrode control circuit that generates a second gate control signal supplied to the second gate electrode of the low-side MOSFET. The second gate electrode control circuit has a voltage generating circuit that supplies a negative voltage negative in polarity relative to a voltage at the source of the low-side MOSFET, to the second gate electrode of the low-side MOSFET.

Semiconductor integrated circuit device and power supply system

A semiconductor device includes a power device and a temperature detection diode. The semiconductor device has a device structure configured to insulate between a power lien of the power device and the temperature detection diode.

Semiconductor device and semiconductor apparatus

To reduce the number of mounted components in the power conversion device and drive device. Each high-side transistor and low-side transistor has an EGE-type structure of (emitter-gate-emitter type). A high-side driver includes a first pull-up transistor configured to apply a first positive voltage to a gate based on an emitter of the high-side transistor, and a first pull-down transistor configured to couple the gate to the emitter. A low-side driver includes a second pull-up transistor configured to apply a second positive voltage to the gate based on an emitter of the low-side transistor, and a second pull-down transistor configured to couple the gate to the emitter.

Power conversion device and drive device

In a switching power source which controls a current which flows in an inductor through a switching element which performs a switching operation in response to a PWM signal, and forms an output voltage by a capacitor which is provided in series in the inductor, a booster circuit which is constituted of a bootstrap capacity and a MOSFET is provided between an output node of the switching element and a predetermined voltage terminal. The boosted voltage is used as an operational voltage of a driving circuit of the switching element, another source/drain region and a substrate gate are connected with each other, and a junction diode between one source/drain region and the substrate gate is inversely directed with respect to the boosted voltage which is formed by the bootstrap capacity.

Switching power supply device and a semiconductor integrated circuit

A switching loss is reduced by reducing a deviation from the operational principle of zero-volt switching (ZVS). A semiconductor integrated circuit includes high-side switch elements Qand Q, a low-side switch element Q, and a controller CNT. A decoupling capacitance Cin is coupled between one end of a high-side element and an earth potential, and the high-side element includes the first and second transistors Qand Qcoupled in parallel. In changing the high-side elements from an on-state to an off-state, CNT controls Qfrom an on-state to an off-state by delaying Qrelative to Q. Qand Qare divided into a plurality of parts inside a semiconductor chip Chip, a plurality of partial first transistors formed by dividing Qand a plurality of partial second transistors formed by dividing Qare alternately arranged in an arrangement direction of Qand Q, inside the semiconductor chip Chip

Semiconductor integrated circuit and method for operating the same

Disclosed is a power conversion circuit that suppresses the flow of a through current to a switching element based on a normally-on transistor. The power conversion circuit includes a high-side transistor and a low-side transistor, which are series-coupled to each other to form a half-bridge circuit, and two drive circuits, which complementarily drive the gate of the high-side transistor and of the low-side transistor. The high-side transistor is a normally-off transistor. The low-side transistor is a normally-on transistor.

Power conversion circuit, multiphase voltage regulator, and power conversion method

Miniaturization of a multiphase type power supply device can be achieved. A power supply control unit in which, for example, a microcontroller unit, a memory unit and an analog controller unit are formed over a single chip, a plurality of PWM-equipped drive units, and a plurality of inductors configure a multiphase power supply. The microcontroller unit outputs clock signals each having a frequency and a phase defined based on a program on the memory unit to the respective PWM-equipped drive units. The analog controller unit detects a difference between a voltage value of a load and a target voltage value acquired via a serial interface and outputs an error amp signal therefrom. Each of the PWM-equipped drive units drives each inductor by a peak current control system using the clock signal and the error amp signal.

Power supply device

A voltage clamping circuit which operates in a stable manner and a switching power source device which enables high-speed operation. In the switching power source device, one source/drain route is connected to an input terminal to which an input voltage is supplied, a predetermined voltage to be restricted is supplied to a gate, and using a MOSFET which provides a current source between another source/drain route and a ground potential of the circuit, a clamp output voltage which corresponds to the input voltage is obtained from another source/drain route. The switching power source device further includes a first switching element which controls a current in an inductor and a second switching element which clamps a reverse electromotive voltage generated in the inductor. The voltage clamping circuit is used in a feedback route for setting a dead time.

Voltage clamp circuit, a switching power supply device, a semiconductor integrated circuit device, and a voltage level conversion circuit

The present invention provides a voltage clamping circuit which is operated in a stable manner with the simple constitution and a switching power source device which enables a high-speed operation. In a switching power source device, one of source/drain routes is connected to an input terminal to which an input voltage is supplied, a predetermined voltage to be restricted is supplied to a gate, and using a MOSFET which provides a current source between another source/drain route and a ground potential of the circuit, a clamp output voltage which corresponds to the input voltage is obtained from another source/drain route. The switching power source device further includes a first switching element which controls a current which is made to flow in an inductor such that the output voltage assumes a predetermined voltage and a second switching element which clamps an reverse electromotive voltage generated in the inductor when the first switching element is turned off to a predetermined potential. In such a switching power source device, the voltage clamping circuit is used in a feedback route for setting a dead time.

In a switching power source which controls a current which flows in an inductor through a switching element which performs a switching operation in response to a PWM signal, and forms an output voltage by a capacitor which is provided in series in the inductor, a booster circuit which is constituted of a bootstrap capacity and a MOSFET is provided between an output node of the switching element and a predetermined voltage terminal. The boosted voltage is used as an operational voltage of a driving circuit of the switching element, another source/drain region and a substrate gate are connected with each other such that when the MOSFET is made to assume an OFF state, and a junction diode between one source/drain region and the substrate gate is inversely directed with respect to the boosted voltage which is formed by the bootstrap capacity.

Growing community of inventors

Tokyo, Japan

Koji Tateno