Nichia Corporation

Koji Tanizawa

Tomotsugu Mitani

Takeshi Ikegami

Yoshikatsu Fukuda

Yoshinori Nakagawa

Hironori Takagi

Hiromitsu Marui

Shuji Nakamura

Takashi Mukai

Hiroshi Marui

Hiroki Narimatsu

Tomoaki Sakai

An nitride semiconductor device for the improvement of lower operational voltage or increased emitting output, comprises an active layer comprising quantum well layer or layers and barrier layer or layers between n-type nitride. semiconductor layers and p-type nitride semiconductor layers, wherein said quantum layer in said active layer comprises InxGa1&#x2212;xN (0&#x3c;x&#x3c;1) having a peak wavelength of 450 to 540 nm and said active layer comprises laminating layers of 9 to 13, in which at most 3 layers from the side of said n-type nitride semiconductor layers are doped with an n-type impurity selected from the group consisting of Si, Ge and Sn in a range of 5&#xd7;10to 2&#xd7;10/cm.

Nitride semiconductor device

A nitride semiconductor device used chiefly as an LD and an LED element. In order to improve the output and to decrease Vf, the device is given either a three-layer structure in which a nitride semiconductor layer doped with n-type impurities serving as an n-type contact layer where an n-electrode is formed is sandwiched between undoped nitride semiconductor layers; or a superlattice structure of nitride. The n-type contact layer has a carrier concentration exceeding 3&#xd7;10cm, and the resistivity can be lowered below 8&#xd7;10&#x3a9;cm.

According to the nitride semiconductor device with the active layer made of the multiple quantum well structure of the present invention, the performance of the multiple quantum well structure can be brought out to intensify the luminous output thereof thereby contributing an expanded application of the nitride semiconductor device. In the nitride semiconductor device comprises an n-region having a plurality of nitride semiconductor films, a p-region having a plurality of nitride semiconductor films, and an active layer interposed therebetween, a multi-film layer with two kinds of the nitride semiconductor films is formed in at least one of the n-region or the p-region.

An nitride semiconductor device for the improvement of lower operational voltage or increased emitting output, comprises an active layer comprising quantum well layer or layers and barrier layer or layers between n-type nitride, semiconductor layers and p-type nitride semiconductor layers, wherein said quantum layer in said active layer comprises InxGa1&#x2014;xN (0&#x3c;x&#x3c;1) having a peak wavelength of 450 to 540 nm and said active layer comprises laminating layers of 9 to 13, in which at most 3 layers from the side of said n-type nitride semiconductor layers are doped with an n-type impurity selected from the group consisting of Si, Ge and Sn in a range of 5&#xd7;10to 2&#xd7;10/cm.

The present invention provides a nitride semiconductor light emitting device with an active layer of the multiple quantum well structure, in which the device has an improved luminous intensity and a good electrostatic withstanding voltage, thereby allowing the expanded application to various products. The active layeris formed of a multiple quantum well structure containing InGaN (0&#x2266;a&#x3c;1). The p-cladding layeris formed on said active layer containing the p-type impurity. The p-cladding layeris mode of a multi-film layer including a first nitride semiconductor film containing Al and a second nitride semiconductor film having a composition different from that of said first nitride semiconductor film. Alternatively, the p-cladding layeris made of single-layered layer made of AlGaN (0&#x2266;b&#x2266;1). A low-doped layeris grown on the p-cladding layerhaving a p-type impurity concentration lower than that of the p-cladding layer. A p-contact layer is grown on the low-doped layerhaving a p-type impurity concentration higher than those of the p-cladding layerand the low-doped layer

The present invention provides a nitride semiconductor light emitting device with an active layer of the multiple quantum well structure, in which the device has an improved luminous intensity and a good electrostatic withstanding voltage, thereby allowing the expanded application to various products. The active layeris formed of a multiple quantum well structure containing InGaN (0&#x2266;a&#x3c;1). The p-cladding layeris formed on said active layer containing the p-type impurity. The p-cladding layeris made of a multi-film layer including a first nitride semiconductor film containing Al and a second nitride semiconductor film having a composition different from that of said first nitride semiconductor film. Alternatively, the p-cladding layeris made of single-layered layer made of AlGaN (0&#x2266;b&#x2266;1). A low-doped layeris grown on the p-cladding layerhaving a p-type impurity concentration lower than that of the p-cladding layerA p-contact layer is grown on the low-doped layerhaving a p-type impurity concentration higher than those of the p-cladding layerand the low-doped layer

An nitride semiconductor device for the improvement of lower operational voltage or increased emitting output, comprises an active layer comprising quantum well layer or layers and barrier layer or layers between n-type nitride. semiconductor layers and p-type nitride semiconductor layers, wherein said quantum layer in said active layer comprises InxGa1&minus;xN (0<x<1) having a peak wavelength of 450 to 540 nm and said active layer comprises laminating layers of 9 to 13, in which at most 3 layers from the side of said n-type nitride semiconductor layers are doped with an n-type impurity selected from the group consisting of Si, Ge and Sn in a range of 5&times;10 to 2&times;10 /cm .

A nitride semiconductor device comprising an n-type nitride semiconductor layer, an active layer having a quantum well structure including a well layer of a nitride semiconductor containing In, the p-type nitride semiconductor layer having a p-type contact layer, a p-type high concentration doped layer interposed between said active layer and said p-type contact layer and a p-type multi-film layer interposed between said active layer and said p-type high concentration doped layer.

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Tokushima, Japan

Koji Tanizawa