Mitsubishi Denki Kabushiki Kaisha

Renesas Technology Corp.

Koji Tange

Kunihiro Hosono

Teruhiko Kumada

Yoshikazu Nagamura

Atsuko Fujino

Yasutaka Kikuchi

Koichi Kido

Atsushi Oshida

Hitoshi Fukuma

Yuki Oomasa

A photomask provided with a light-shielding coating on a surface of a glass substrate is cleaned with Ogas solved water to eliminate organic substances adhered on a surface of the photomask (S). Using an alkaline chemical such as alkaline ionized water or hydrogenated water, the photomask is then cleaned to eliminate contamination (S). After completion of these cleaning steps, the photomask is dried (S).

Cleaning process for photomasks

A first region of an object ( ) to be written corresponding to a shot region (H ) is irradiated with an electron beam ( ) for a standard shot period (T ). A pattern (M ) is thereby written in the first region of the object ( ) to be written. Next, a second region of the object ( ) to be written corresponding to a shot region (H ) is irradiated with the electron beam ( ) for a shot period (T ) which is determined according to the shot size of the second region. A pattern (M ) is thereby written in the second region of the object ( ) to be written. Owing to the correction of shot period, the finished dimension of the pattern M is the same as the designed dimension thereof with respect to the Y direction.

Pattern writing method employing electron beam writing device of variable-shaped vector scan system

By using a developer consisting essentially of one organic solvent selected from the group consisting of a ketone having 3 to 8 carbon atoms, a carboxylate ester having 3 to 8 carbon atoms, which may have an alkoxy group, and a dicarboxylate ester having 3 to 8 carbon atoms for developing a positive-type radiation resist containing a copolymer of an &agr;-methyl styrene compound and an &agr;-chloroacrylate ester compound as a base resin, there is provided a developing process and a process for forming a pattern (according to GHOST method in particular) which are used for preparing an excellent resist pattern profile, a process for preparing a photomask and a process for preparing a semiconductor device.

Developing process, process for forming pattern and process for preparing semiconductor device using same

A photolithography mask having monitoring marks, which is suitable for correctly monitoring the dimensions of patterns that are intended for transfer, and its manufacturing method. The photolithography mask is manufactured by plotting mask patterns that are designed on a data address unit basis by using a prescribed plotting address unit that is larger the data address unit. Monitoring marks are formed so as to correspond to all plotting grids, respectively, that are necessary for plotting of all mask patterns. Pattern edges plotted by using all different plotting grids are distributed to the monitoring marks, respectively.

Photolithography mask having monitoring marks and manufacturing method thereof

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Tokyo, Japan

Koji Tange