Takata Corporation

Victor Company of Japan, Limited

Hitachi, Ltd.

Mitsubishi Denki Kabushiki Kaisha

Mitsubishi Electric Corporation

Isuzu Motors Limited

Kao Corporation

Nikon Corporation

Basf Se Corporation

Hitachi Global Storage Technologies Netherlands B.v.

Nippon Kayaku Kabushiki Kaisha

Canon Kabushiki Kaisha

Toyota Jidosha Kabushiki Kaisha

Tdk Corporation

Hgst Netherlands, B.v.

Koji Tanaka

Koji Inuzuka

Masato Takao

Daisuke Murakami

Hiromasa Tanji

Hiroaki Fujii

Hideaki Yano

Takeshi Shibamoto

Hiroyuki Sugiyama

Nobuaki Takahashi

Hitoshi Fujita

Takashi Shima

Koichi Furukawa

Mikio Asakura

Hideo Sato

Koichi Nishi

Fujio Suzuki

Yoshiaki Amano

Mitsuo Kubo

Yukiko Takeda

Hidenori Inouchi

Kazuya Yamada

Takehiro Morishige

Kazunori Nishikawa

Haruo Shibata

Seiichi Takashima

Katsumi Nakamura

Hiroyuki Hasegawa

Yasuhiko Tsukikawa

Kenichi Yasuda

Ze Chen

Tetsuo Tada

Takaro Mori

Tsuyoshi Harada

Hideo Yamakura

Ryoichi Takagi

Toru Yamagishi

Ryuji Yano

Toshio Tamura

Hirokazu Sakai

Mitsuru Kikuchi

Hideki Yarimizu

Tsuneo Furuki

Kenji Suzuki

Takahiro Mori

Yasuhiro Yamada

Shinji Tanaka

Tadaaki Yamauchi

Tomohiro Yamada

Atsushi Koike

Yoshinori Takeuchi

Kimitoshi Etoh

Takaharu Tsuji

Masayuki Kouketsu

Georg Sieder

Takashi Watanabe

Shinya Soneda

Akihiro Ito

Ryozo Abe

Masahiro Hayashi

Koichi Yoshida

Yayoi Nakamura

Torsten Katz

Masayuki Suzuki

Taketoshi Shikano

Norbert Asprion

Akira Kondo

Takaaki Kimura

Ute Lichtfers

Hiroshi Umino

Fumihito Masuoka

Hitoshi Nakayama

Hideo Tobata

Ichiro Oodake

Mitsuru Sakai

Yuji Sato

Takashi Kawai

Ryosuke Yoshimitsu

Takashi Saso

Hiromitsu Yoshimoto

Jun Nakai

Futoshi Fusejima

Kakeru Otsuka

Daizaburo Mori

Yasuo Haneji

Goro Hayakawa

Ryuji Ueno

Koji Hirayama

Norikazu Sakai

Atsushi Ichida

Atsushi Tomokuni

Yusuke Hokii

Daisuke Sawa

Yoshio Takikawa

Shigeru Morimoto

Yoshihisa Uchida

Takahiro Miyake

Youichi Andoh

Ayaka Fujimoto

Noriyoshi Kokubo

A tactile sense presentation device calculates a first drive voltage signal by using a target vibration preset to correspond to a touch position and a vibration transfer characteristic up to the touch position through an actuator, and reduces components of a first frequency band of the first drive voltage signal less than a preset frequency to calculate a second drive voltage signal within a preset voltage range, whereby vibration presenting appropriate tactile stimulus to a user can be generated within the preset voltage range.

Tactile sense presentation device and tactile sense presentation method

According to the present disclosure, a semiconductor device includes a semiconductor substrate, a first metal layer provided above the semiconductor substrate, a second metal layer provided above the first metal layer and containing Ni as a material and a third metal layer provided above the second metal layer and containing Cu or Ni as a material, wherein the second metal layer has a Vickers hardness of 400 Hv or more and is harder than the third metal layer, and the third metal layer is harder than the first metal layer.

Semiconductor device and method for manufacturing semiconductor device

A dental restorative set includes a glass ionomer cement and a composite resin, wherein the composite resin contains a (meth)acrylate having an acid group.

Dental restorative set and method of restoring tooth

A first principal electrode and a first control electrode pad are formed on a first principal surface of the semiconductor chip. A second principal electrode and a second control electrode pad are formed on a second principal surface of the semiconductor chip. The second principal electrode and the second control electrode pad are respectively bonded to first and second metal patterns of an insulating substrate. Bonding sections of first and second wires overlap a bonding section of the second principal electrode or the second control electrode pad in plan view. Thickness of the first and second metal patterns is 0.2 mm or less.

Semiconductor device

Display screen with transitional graphical user interface

A semiconductor device includes: a drift layer of a first conduction type provided in a semiconductor substrate having a first principal plane and a second principal plane opposed to the first principal plane; a first semiconductor layer of a second conduction type provided between the first principal plane of the semiconductor substrate and the drift layer and having impurity concentration higher than impurity concentration of the drift layer; a first buffer layer of a first conduction type provided between the second principal plane of the semiconductor substrate and the drift layer and having hydrogen-induced donors with impurity concentration higher than impurity concentration of the drift layer; and a second semiconductor layer of a first conduction type or a second conduction type provided between the second principal plane of the semiconductor substrate and the first buffer layer and having impurity concentration higher than impurity concentration of the drift layer, wherein the first buffer layer includes a complex defect of interstice carbon and interstice oxygen having density decreasing from the second principal plane side toward the first principal plane side.

Semiconductor device comprising a buffer layer including a complex defect of interstice carbon and interstice oxygen

A semiconductor device includes: a semiconductor substrate including a front surface, a back surface that is opposite to the front surface, and a drift layer of a first conductive type disposed between the front surface and the back surface; a first diffusion layer of a second conductive type provided between the drift layer and the front surface; a second diffusion layer provided between the drift layer and the back surface; a first buffer layer of the first conductive type provided between the drift layer and the second diffusion layer, having a concentration higher than that of the drift layer, and into which a proton is injected; and a second buffer layer of the first conductive type provided between the first buffer layer and the second diffusion layer and having a concentration higher than that of the drift layer, wherein a peak concentration of the second buffer layer is higher than a peak concentration of the first buffer layer, an impurity concentration of the first buffer layer gradually decreases toward the back surface, a length from a peak position of the first buffer layer to a boundary between the drift layer and the first buffer layer is represented by Xa, a length from the peak position to a boundary between the first buffer layer and the second buffer layer is represented by Xb, and Xb&#x3e;5 Xa.

Semiconductor device and manufacturing method thereof

A semiconductor device includes an N-type drift layer provided between a first main surface and a second main surface of the semiconductor substrate and an N-type buffer layer provided between the N-type drift layer and the first main surface and having a higher impurity peak concentration than the N-type drift layer. The N-type buffer layer has a structure that a first buffer layer, a second buffer layer, a third buffer layer, and a fourth buffer layer are disposed in this order from a side of the first main surface. When a distance from an impurity peak position of the first buffer layer to an impurity peak position of the second buffer layer is L12 and a distance from an impurity peak position of the second buffer layer to an impurity peak position of the third buffer layer is L23, a relationship of L23/L12&#x2265;3.5 is satisfied.

An object of the present invention is to provide a semiconductor device capable of reducing the on-voltage and a manufacturing method thereof. According to the present invention, a semiconductor device includes a Si substrate, a p-type anode layer provided on the front surface of the Si substrate, an anode electrode provided on the p-type anode layer, an n-type cathode layer and a p-type cathode layer provided adjacent to each other on a back surface of the Si substrate, an Al alloy layer provided on the n-type cathode layer and containing Si, and an Al alloy layer provided on the p-type cathode layer and containing Si, in which impurity concentration in the n-type cathode layer is 1E19 cmor higher and impurity concentration in the p-type cathode layer is 10% or lower of the impurity concentration in the n-type cathode layer.

A semiconductor device, which is a diode, includes the following: an n cathode layer, which is an n-type region, disposed in a surface layer of a semiconductor substrate; a p cathode layer, which is a p-type region, disposed in the surface layer; and a cathode electrode, which is a metal electrode, in contact with both of the n cathode layer and the p cathode layer. The cathode electrode includes a first metal layer in contact with both of the n cathode layer and the p cathode layer, and a second metal layer disposed on the first metal layer. A contact surface between the first metal layer and the second metal layer has an oxygen concentration lower than the oxygen concentration of a contact surface between the first metal layer, and the n cathode layer and the p cathode layer.

It is an object of the present invention to provide a semiconductor device capable of adjusting a V-Etrade-off characteristic without a life-time control and a power conversion device having the semiconductor device. A semiconductor device according to the present invention includes a p-type anode layer including a donor impurity and an acceptor impurity. An acceptor impurity concentration of the p-type anode layer is equal to or larger than a donor impurity concentration of the p-type anode layer, an acceptor impurity concentration of the p-type anode layer is equal to or larger than a donor impurity concentration of the p-type anode layer, and a donor impurity concentration of the p-type anode layer is equal to or larger than a donor impurity concentration of the n-type drift layer.

High withstand voltage diode and power conversion device

A cooling structure for a first electromagnetic coil includes the first electromagnetic coil having a space extending in the direction of a predetermined axis Z; a cooling member attached to an end surface, with respect to the direction of the predetermined axis Z, of the first electromagnetic coil and having a flow path for fluid internally formed; and an inlet pipe and an outlet pipe connected, within the space, to an inlet and outlet, respectively, of the flow path of the cooling member and extending through the space to a region outside the electromagnetic coil.

Cooling structure for electromagnetic coil, and electromagnetic actuator

Provided is a skin cleansing composition comprising the following components (A), (B), (C), (D), and (E): (A) 0.1 to 25 mass % of an ether oil which is in a liquid state at 25&#xb0; C., (B) 0.003 to 1 mass % of a water-soluble polymer comprising acrylic acid or methacrylic acid as a constitutional unit, (C) 1 to 30 mass % of a hydrocarbon oil having a viscosity of 15 mPa&#xb7;s or lower at 30&#xb0; C., (D) 60 to 95 mass % of water, and (E) 0.49 mass % or less of a nonionic surfactant having an HLB of larger than 9, wherein the mass ratio of the component (B) to the component (A), (B)/(A) is from 0.0001 to 0.1, and the mass ratio between the component (A) and the component (C), (A)/((A)+(C)) is from 0.05 to 0.9.

Skin cleansing composition

Links are provided, each between one of the side frames of the seat cushion and the support member, and can be swung. A band extends at a substantially center part of the seat cushion and between the side frames, and is provided beneath the seat pad. One end of the band is secured to the top of one side frame, and the other end (free end) hangs over the top of the other side frame. The free end of the band further extends via the direction changing member provided on the side frame, first passing by a first relay point, i.e., the axle of the link provided on the side frame, and then passing by a second relay point, i.e., the axle of the link provided on the support member. At an emergency, the traction device pulls and stretches the band.

Vehicle seat

To provide a dental glass ionomer cement composition having excellent adhesion strength to a metallic prosthesis. A dental glass ionomer cement composition includes a copolymer (A), a fluoroaluminosilicate glass powder (B) and water (C). The copolymer (A) includes a polymer or copolymer of &#x3b1;-&#x3b2; unsaturated carboxylic acid, or includes a copolymer of &#x3b1;-&#x3b2; unsaturated carboxylic acid and one or more kinds selected from a group of acrylamide, acrylonitrile, methacrylic acid ester, acrylates, vinyl chloride, allyl chloride and vinyl acetate. In the copolymer (A), the number of molecules of &#x3b1;-&#x3b2; unsaturated carboxylic acid occupies 50% or more of the total number of molecules. The dental glass ionomer cement composition further includes a compound (D) which contains a sulfur atom in one molecule, includes a carboxylic group and an amino group and does not include a polymerizable group.

Dental glass ionomer cement composition

Growing community of inventors

Tokyo, Japan

Koji Tanaka