Renesas Electronics Corporation

Nec Corporation

Nec Electronics Corporation

Koji Soejima

Masaya Kawano

Yoichiro Kurita

Shintaro Yamamichi

Nobuaki Takahashi

Katsumi Kikuchi

Naoji Senba

Yuzo Shimada

Hideya Murai

Sakae Kitajo

Mikio Oda

Satoshi Matsui

Masahiro Komuro

Shinichi Miyazaki

Kentaro Mori

Hirokazu Honda

In a conventional electronic device and a method of manufacturing the same, reduction in cost of the electronic device is hindered because resin used in an interconnect layer on the solder ball side is limited. The electronic device includes an interconnect layer (a first interconnect layer) and an interconnect layer (a second interconnect layer). The second interconnect layer is formed on the undersurface of the first interconnect layer. The second interconnect layer is larger in area seen from the top than the first interconnect layer and is extended to the outside from the first interconnect layer.

Electronic device

The electronic device includes a first interconnect layer and a second interconnect layer. The second interconnect layer is provided on the lower surface of the first interconnect layer. The first interconnect layer includes a via plug (first conductive plug). An end face of the via plug on the side of the second interconnect layer is smaller in area than the opposite end face. The via plug is exposed on the surface of the first interconnect layer facing the second interconnect layer. An insulating resin forming the first interconnect layer is higher in thermal decomposition temperature than an insulating resin forming the second interconnect layer.

Electronic device and method of manufacturing the same

A falling off of a through electrode is inhibited without decreasing a reliability of a semiconductor device including a through electrode. A semiconductor deviceincludes: a silicon substrate; a through electrodeextending through the silicon substrate; and a first insulating ringprovided in a circumference of a side surface of the through electrodeand extending through the semiconductor substrate. In addition, the semiconductor devicealso includes a protruding portion, being provided at least in the vicinity of a back surface of a device-forming surface of the semiconductor substrateso as to contact with the through electrode, and protruding in a direction along the surface of the semiconductor substratetoward an interior of the through electrode

Semiconductor device

A method of manufacturing a semiconductor device includes forming an interconnect member, mounting a first semiconductor chip having a semiconductor substrate in a face-down manner on the interconnect member, forming a resin layer on the interconnect member to cover a side surface of the first semiconductor chip, thinning the first semiconductor chip and the resin layer, forming an inorganic insulating layer on a back surface of the first semiconductor chip so as to be in contact with the back surface and to extend over the resin layer, and forming a through electrode so as to penetrate the inorganic insulating layer and the semiconductor substrate.

Method of stacking semiconductor chips including forming an interconnect member and a through electrode

A semiconductor device includes a plural number of interconnects and a plural number of vias are stacked. A semiconductor element is enclosed in an insulation layer. At least one of the vias provided in insulation layers and/or at least one of interconnects provided in the interconnect layers are of cross-sectional shapes different from those of the vias formed in another one of the insulation layers and/or interconnects provided in another one of the interconnect layers.

Semiconductor device and method for manufacturing the same

Method of manufacturing a semiconductor device, which achieves a reduction in manufacturing cost and prevents, a damage on the interconnect layer by an influence of the etchant solution, since the support substrate can be easily stripped from the interconnect layer. The method of manufacturing a semiconductor device includes: forming an interconnect film, by forming a seed metal layer on a support substrate and a protective film contacting with an end of an interface between the support substrate and the seed metal layer, and by growing a plated material from a surface of the seed metal layer; mounting a semiconductor chip on the interconnect film; removing at least a portion of the protective film to form a region where the support substrate and the seed metal layer are exposed; and stripping the support substrate from the region as a starting point to remove thereof from the seed metal layer.

Method for manufacturing semiconductor device

Growing community of inventors

Kanagawa, Japan

Koji Soejima