Hitachi-kokusai Electric Inc.

Sony Corporation

Matsushita Electric Industrial Co., Ltd.

Mitsubishi Denki Kabushiki Kaisha

Tokyo Electron Limited

Sanyo Electric Co., Ltd.

Daikin Industries, Ltd.

Renesas Technology Corp.

Nec Electronics Corporation

Kokusai Electric Corporation

Ulvac, Inc.

Anelva Corporation

Kanto Denka Kogyo Co., Ltd.

Koji Shibata

Shinya Morita

Yusaku Okajima

Yuji Takebayashi

Hitoshi Murata

Akihiro Sato

Makoto Hirano

Toshimitsu Miyata

Mitsuhiro Hirano

Tomoyuki Matsuda

Mitsunori Takeshita

Etsuo Wani

Masahiro Tatta

Naoto Tsuji

Yoshihide Kosano

A technique for improving uniformity of film thickness on substrates, includes a substrate processing apparatus having a substrate retainer including substrate and partition plate supports; a reaction tube; a first driver vertically moving the substrate retainer into or out of the reaction tube; a second driver vertically moved by the first driver and rotating the substrate retainer to change a distance between a substrate and a partition plate by moving at least one of the substrate or the partition plate support; a heater; a gas supplier comprising a nozzle; a gas exhauster; and a controller controlling the first driver, the second driver and the gas supplier such that a gas is supplied to the substrate while changing at least one of a relative position of the substrate and a relative position of the partition plate with respect to a hole of the nozzle by driving the second driver.

Substrate processing apparatus, elevator and method of manufacturing semiconductor device

The sizes required for maintenance are reduced and an occupying floor area is reduced. The substrate processing apparatus contains a load lock chamberand a transfer chamberrespectively provided in order from the rear side within a case; and a processing chamberprovided above the load lock chamberfor processing wafers. An opening sectionA, and an opening and closing meansA for opening and closing the opening sectionA are respectively provided in a location at the rear side of the transfer chamberwhere the load lock chamberis not arranged.

Substrate processing apparatus and manufacturing method for a semiconductor device

To provide a substrate processing apparatus, comprising: a reaction vessel having a processing chamber inside that processes a substrate; a heating device that heats said substrate from an outer peripheral side of the reaction vessel; a lid member that closes the processing chamber; an attachment/detachment jig placed on the lid member for attaching/detaching the reaction vessel from an inside of the heating device; and a support section provided in an upper side of a lower end of the reaction vessel on an inside wall of the reaction vessel, and abutted on an upper surface of the attachment/detachment jig for attaching/detaching the reaction vessel from the inside of the heating device.

Substrate processing apparatus and attaching/detaching method of reaction vessel

A cleaning method for CVD apparatus wherein by-products such as SiOand SiNadhered to and deposited on surfaces of the inner wall, electrodes and other parts of a reaction chamber at the stage of film formation can be removed efficiently. Furthermore, the amount of cleaning gas discharged is so small that the influence on environment such as global warming is little and cost reduction can be also attained. After the film formation on a base material surface by the use of CVD apparatus, a fluorinated cleaning gas containing a fluorcompound is converted to plasma by means of a remote plasma generator, and the cleaning gas having been converted to plasma is introduced into a reaction chamber so that any by-products adhered to inner parts of the reaction chamber is removed.

Method of cleaning CVD device and cleaning device therefor

Growing community of inventors

Toyama, Japan

Koji Shibata